Transistors IC MOSFET SMD Type Product specification 2N7002W ■ Features SOT-323 Unit:mm 1.3±0.1 ● Low On-Resistance 2 2.3±0.15 ● Low Input Capacitance 1.25±0.1 1 0.525 0.65 ● Low Gate Threshold Voltage ● Fast Switching Speed 0.36 3 ● Low Input/Output Leakage 0.3±0.1 0.1 +0.05 -0.02 2.1±0.1 0.95±0.05 0.1max ● Ultra-Small Surface Mount Package 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current - Continuous Power dissipation 115 ID - Pulsed Note(1) mA 800 @ TA = 25℃ Operating and storage junction temperature range PD 0.2 W TJ, Tstg -55 to +150 ℃ Notes: 1. Pulse width limited by maximum junction temperature. ■ Electrical Characteristics Ta = 25℃ Symbol Test conditons Min V(BR)DSS VGS=0 V, ID=10μA 60 VGS(th) VDS=VGS, ID=250μA 1 Gate-body leakage lGSS VDS=0 V, VGS=±20 V Zero gate voltage drain current IDSS Parameter Drain-source breakdown voltage Gate-threshold voltage Typ Max 1.76 2 V ±10 1 VDS=60 V, VGS=0 V VGS=10 V, VDS=7.5 V ID(ON) Drain-source on-resistance RDS(on) Forward tran conductance gts Input capacitance Ciss Output capacitance Coss 0.5 μA A VGS=10 V, ID=500 mA @Tj = 125℃ 13.5 VGS=5 V, ID=50 mA 7.5 VDS=10 V, ID=200 mA nA 500 TC = 125℃ On-state drain current Unit 80 Ω ms 22 50 VDS=25 V, VGS=0 V, f=1 MHz 11 25 pF Reverse transfer capacitance Crss 2 7 Turn-on Time td(on) VDD = 30 V, RL = 150 Ω 7.0 20 ns Turn-off Time td(off) ID =0.2 A, VGEN = 10 V, RG = 25Ω 11 20 ns ■ Marking Marking 702 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1