TYSEMI 2N7002W

Transistors
IC
MOSFET
SMD Type
Product specification
2N7002W
■ Features
SOT-323
Unit:mm
1.3±0.1
● Low On-Resistance
2
2.3±0.15
● Low Input Capacitance
1.25±0.1
1
0.525
0.65
● Low Gate Threshold Voltage
● Fast Switching Speed
0.36
3
● Low Input/Output Leakage
0.3±0.1
0.1
+0.05
-0.02
2.1±0.1
0.95±0.05
0.1max
● Ultra-Small Surface Mount Package
1.Base
1.
Gate
2.Emitter
2.
Source
3.
Drain
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Drain Current - Continuous
Power dissipation
115
ID
- Pulsed Note(1)
mA
800
@ TA = 25℃
Operating and storage junction temperature range
PD
0.2
W
TJ, Tstg
-55 to +150
℃
Notes: 1. Pulse width limited by maximum junction temperature.
■ Electrical Characteristics Ta = 25℃
Symbol
Test conditons
Min
V(BR)DSS
VGS=0 V, ID=10μA
60
VGS(th)
VDS=VGS, ID=250μA
1
Gate-body leakage
lGSS
VDS=0 V, VGS=±20 V
Zero gate voltage drain current
IDSS
Parameter
Drain-source breakdown voltage
Gate-threshold voltage
Typ
Max
1.76
2
V
±10
1
VDS=60 V, VGS=0 V
VGS=10 V, VDS=7.5 V
ID(ON)
Drain-source on-resistance
RDS(on)
Forward tran conductance
gts
Input capacitance
Ciss
Output capacitance
Coss
0.5
μA
A
VGS=10 V, ID=500 mA @Tj = 125℃
13.5
VGS=5 V, ID=50 mA
7.5
VDS=10 V, ID=200 mA
nA
500
TC = 125℃
On-state drain current
Unit
80
Ω
ms
22
50
VDS=25 V, VGS=0 V, f=1 MHz
11
25
pF
Reverse transfer capacitance
Crss
2
7
Turn-on Time
td(on)
VDD = 30 V, RL = 150 Ω
7.0
20
ns
Turn-off Time
td(off)
ID =0.2 A, VGEN = 10 V, RG = 25Ω
11
20
ns
■ Marking
Marking
702
http://www.twtysemi.com
[email protected]
4008-318-123
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