NTR3A30PZ D

NTR3A30PZ
Power MOSFET
−20 V, −5.5 A, Single P−Channel
2.4 x 2.9 x 1.0 mm SOT−23 Package
Features
• Low RDS(on) Solution in 2.4 mm x 2.9 mm Package
• ESD Diode−Protected Gate
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(on) Max
Applications
38 mW @ −4.5 V
• High Side Load Switch
• Battery Switch
• Optimized for Power Management Applications for Portable
−20 V
73 mW @ −1.8 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current (Note 1)
Drain Current (Note 1)
Power Dissipation
(Note 1)
P−Channel MOSFET
Symbol
Value
Unit
VDSS
−20
V
VGS
±8
V
ID
−3.0
A
Steady
State
TA = 25°C
TA = 85°C
−2.2
t≤5s
TA = 25°C
−5.5
Steady
State
TA = 25°C
PD
t≤5s
Pulsed Drain Current
A
Operating Junction and Storage Temperature
TJ,
TSTG
−55 to
150
°C
ESD HBM, JESD22−A114
VESD
2000
V
Source Current (Body Diode) (Note 2)
IS
−0.48
A
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
260
°C/W
Junction−to−Ambient – t ≤ 5 s (Note 1)
RqJA
79
S
2
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain
3
SOT−23
CASE 318
STYLE 21
TRH M G
G
1
Gate
2
Source
TRH
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [2 oz] including traces).
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3
1
1.58
−9.1
D
G
W
0.48
IDM
tp = 10 ms
−5.5 A
50 mW @ −2.5 V
Products, such as Smart Phones, Media Tablets, PMP, DSC, GPS, and
Others
Parameter
ID MAX
NTR3A30PZT1G
Package
Shipping†
SOT−23
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 1
1
Publication Order Number:
NTR3A30PZ/D
NTR3A30PZ
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
−20
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
10.5
ID = −250 mA, ref to 25°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = −20 V
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±5 V
VGS(TH)
VGS = VDS, ID = −250 mA
V
TJ = 25°C
mV/°C
−1
mA
±10
mA
−1.0
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
−0.4
−0.65
10.5
mV/°C
VGS = −4.5 V
ID = −3 A
31
38
VGS = −2.5 V
ID = −2.5 A
36
50
VGS = −1.8 V
ID = −1.5 A
51
73
VDS = −5 V, ID = −3 A
mW
30
S
1651
pF
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
129
Total Gate Charge
QG(TOT)
17.6
Threshold Gate Charge
QG(TH)
VGS = 0 V, f = 1.0 MHz, VDS = −15 V
VGS = −4.5 V, VDS = −15 V, ID = −3 A
148
nC
0.7
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
2.4
4.9
td(on)
100
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = −4.5 V, VDS = −15 V,
ID = −3 A, RG = 6.0 W
tf
ns
208
1043
552
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = −0.4 A
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
TJ = 25°C
0.65
TJ = 125°C
0.47
1.0
V
NTR3A30PZ
TYPICAL CHARACTERISTICS
20
−6 V
18
20
−2.5 V
−ID, DRAIN CURRENT (A)
−ID, DRAIN CURRENT (A)
14
12
−1.6 V
10
8
6
VGS = −1.4 V
4
0.5
1.0
1.5
2.0
2.5
3.5
3.0
4.0
4.5
12
10
8
6
TJ = −55°C
0.5
1.0
1.5
2.0
2.5
Figure 2. Transfer Characteristics
TJ = 25°C
ID = −3.0 A
0.09
0.08
0.07
0.06
0.05
0.04
1.5
2.0
2.5
3.0
3.5
4.0
−VGS, GATE VOLTAGE (V)
4.5
0.166
0.156
0.146
0.136
0.126
0.116
0.106
0.096
0.086
0.076
0.066
0.056
0.046
0.036
0.026
TJ = 25°C
VGS = −1.8 V
VGS = −4.5 V
VGS = −2.5 V
1
2
4
3
5
6
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100,000
1.4
TJ = 150°C
VGS = −4.5 V
ID = −3.0 A
−IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
TJ = 125°C
4
Figure 1. On−Region Characteristics
0.10
1.3
TJ = 25°C
−VGS, GATE−TO−SOURCE VOLTAGE (V)
0.11
1.0
14
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.12
0.03
0.02
16
2
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
VDS ≤ −5 V
18
−1.8 V
16
2
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−3 V
1.2
TJ = 125°C
10,000
1.1
1.0
0.9
1000
0.8
0.7
−50
−25
0
25
50
75
100
125
150
100
2
4
6
8
10
12
14
16
18
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
20
NTR3A30PZ
2000
1800
CISS
1600
1400
1200
VGS = 0 V
TJ = 25°C
f = 1 MHz
1000
800
600
400
COSS
200 C
RSS
0
0
2
4
6
8
10
12
14
18
16
20
5
15
4
VDS
QGS
2
QGD
0
0
2
4
6
VDS = −15 V
TJ = 25°C
ID = −3.0 A
1
6
8
10
12
14
16
3
0
18
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
−IS, SOURCE CURRENT (A)
10,000
t, TIME (ns)
12
9
Figure 7. Capacitance Variation
td(off)
1000
tf
tr
td(on)
100
VGS = −4.5 V
VDD = −15 V
ID = −3.0 A
1
10
1
TJ = 25°C
TJ = 125°C
0.1
100
TJ = −55°C
0.2
0.4
0.6
0.8
1.0
1.2
RG, GATE RESISTANCE (W)
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
0.9
100
0.8
−ID, DRAIN CURRENT (A)
ID = −250 mA
0.7
−VGS(th) (V)
VGS
3
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
10
18
QT
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
2400
2200
−VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
0.6
0.5
0.4
0.3
0.2
−50
−25
0
25
50
75
100
125
10
100 ms
1 ms
1
10 ms
0.1
0.01
150
0 ≤ VGS ≤ −8 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
DC
10
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Threshold Voltage
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
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4
100
NTR3A30PZ
TYPICAL CHARACTERISTICS
1000
50% Duty Cycle
R(t) (°C/W)
100
10
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. FET Thermal Response
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5
1
10
100
1000
NTR3A30PZ
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTR3A30PZ/D