BAT54M3T5G Schottky Barrier Diode This Schottky barrier diode is designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. The BAT54M3T5G device is a spin−off of our popular SOT−23 three−leaded device and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. Features • • • • • Extremely Fast Switching Speed Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc Reduces Board Space NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 30 V SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODE 3 CATHODE MARKING DIAGRAM 3 MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25°C Derate above 25°C PF Forward Current (DC) Rating 200 2.0 mW mW/°C IF 200 Max mA Non−Repetitive Peak Forward Current tp < 10 msec IFSM 600 mA Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IFRM 300 mA Junction Temperature TJ −55 to +125 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. 2 1 ANODE 2 SOT−723 CASE 631AA STYLE 2 1 AP M 1 AP = Specific Device Code M = Date Code ORDERING INFORMATION Package Shipping† BAT54M3T5G SOT−723 (Pb−Free) 8000/Tape & Reel NSVBAT54M3T5G SOT−723 (Pb−Free) 8000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BAT54M3/D BAT54M3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)R 30 − − V Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT − 7.6 10 pF Reverse Leakage (VR = 25 V) IR − 0.5 2.0 mA VF V Characteristic Reverse Breakdown Voltage (IR = 10 mA) Forward Voltage (IF = 0.1 mA) − 0.22 0.24 (IF = 1.0 mA) − 0.29 0.32 (IF = 10 mA) − 0.35 0.40 (IF = 30 mA) − 0.41 0.5 (IF = 100 mA) − 0.52 0.8 − − 5.0 Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA, Figure 1) trr ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. http://onsemi.com 2 BAT54M3T5G 820 Ω +10 V 2k 0.1 μF 100 μH tr IF 0.1 μF tp IF T trr 10% T DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% iR(REC) = 1 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) INPUT SIGNAL Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 TA = 150°C IR, REVERSE CURRENT (μA) 85°C 10 1 50°C 1.0 25°C 0.1 0.0 −40°C −55°C 100 TA = 125°C 10 1.0 TA = 85°C 0.1 0.01 TA = 25°C 0.001 0.2 0.3 0.4 0.1 0.5 VF, FORWARD VOLTAGE (VOLTS) 0 0.6 5 15 25 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 14 CT, TOATAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1 25°C 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 3 25 30 30 BAT54M3T5G PACKAGE DIMENSIONS SOT−723 CASE 631AA ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 HE 2 2X 2X b e C 0.08 X Y SIDE VIEW TOP VIEW 3X L 1 STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE 3X DIM A b b1 C D E e HE L L2 MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 L2 BOTTOM VIEW RECOMMENDED SOLDERING FOOTPRINT* 2X 0.40 2X 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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