BAV70M3 Dual Switching Diode Common Cathode The BAV70M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for switching applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. www.onsemi.com 70 V DUAL COMMON CATHODE SWITCHING DIODES Features • Reduces Board Space • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol Value Unit VR 100 Vdc IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 1 ANODE 2 ANODE 3 CATHODE MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient RqJA 470 °C/W PD 640 mW 5.1 mW/°C RqJA 195 °C/W TJ, Tstg −55 to +150 °C Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature mW 2 265 mW/°C April, 2015 − Rev. 2 SOT−723 CASE 631AA STYLE 3 1 AL M 1 2.1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. © Semiconductor Components Industries, LLC, 2015 3 1 AL = Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping† BAV70M3T5G SOT−723 (Pb−Free) 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BAV70M3/D BAV70M3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode) Characteristic Reverse Breakdown Voltage (I(BR) = 100 mA) Symbol Min Max Unit V(BR) 100 − V − − − 60 1.0 100 − 1.5 − − − − 715 855 1000 1250 − 6.0 Reverse Voltage Leakage Current (Note 3) mA IR (VR = 25 V, TJ = 150°C) (VR = 100 V) (VR = 70 V, TJ = 150°C) Diode Capacitance CD pF (VR = 0 V, f = 1.0 MHz) Forward Voltage VF mV (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) RL = 100 W Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA) (Figure 1) trr ns 3. For each individual diode while second diode is unbiased. 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% D.U.T. 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) BAV70M3 Curves Applicable to Each Anode 10 10 TA = 85°C IR, REVERSE CURRENT (mA) TA = 125°C TA = 55°C TA = 25°C 1 TA = 150°C TA = −40°C 0.1 TA = −55°C 0.01 0.1 TA = 150°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, FORWARD VOLTAGE (V) 0.9 0 1.0 10 Figure 2. Forward Voltage 20 30 40 50 VF, REVERSE VOLTAGE (V) Figure 3. Leakage Current 0.6 Cd, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 0.58 0.56 0.54 0.52 0.5 0.48 0 1 2 3 4 5 6 VR, REVERSE VOLTAGE (V) Figure 4. Capacitance www.onsemi.com 3 7 8 60 70 BAV70M3 PACKAGE DIMENSIONS SOT−723 CASE 631AA ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 HE 2 2X 2X b e C 0.08 X Y SIDE VIEW TOP VIEW 3X L 1 RECOMMENDED SOLDERING FOOTPRINT* 3X L2 DIM A b b1 C D E e HE L L2 MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE 2X BOTTOM VIEW 0.40 2X 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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