MCR68 D

MCR68−2
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for overvoltage protection in crowbar circuits.
Features
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• Glass-Passivated Junctions for Greater Parameter Stability and
Reliability
SCRs
12 AMPERES RMS
50 VOLTS
• Center-Gate Geometry for Uniform Current Spreading Enabling
•
•
•
High Discharge Current
Small Rugged, Thermowatt Package Constructed for Low Thermal
Resistance and Maximum Power Dissipation and Durability
High Capacitor Discharge Current, 300 Amps
Pb−Free Package is Available*
G
A
K
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(TJ = *40 to +125°C, Gate Open)
MCR68−2
VDRM,
VRRM
50
ITM
300
A
On-State RMS Current
(180° Conduction Angles; TC = 85°C)
IT(RMS)
12
A
Average On-State Current
(180° Conduction Angles; TC = 85°C)
IT(AV)
8.0
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C)
ITSM
100
A
Circuit Fusing Considerations (t = 8.3 ms)
I2t
40
A2s
Forward Peak Gate Current
(t ≤ 1.0 ms, TC = 85°C)
IGM
2.0
A
Forward Peak Gate Power
(t ≤ 1.0 ms, TC = 85°C)
PGM
20
W
PG(AV)
0.5
W
Operating Junction Temperature Range
TJ
−40 to +125
°C
Storage Temperature Range
Tstg
−40 to +150
°C
−
8.0
in. lb.
Peak Discharge Current (Note 2)
Forward Average Gate Power
(t = 8.3 ms, TC = 85°C)
Mounting Torque
Value
Unit
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
December, 2005 − Rev. 2
AY WW
MCR68−2G
AKA
1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various
duration of an exponentially decaying current waveform, tw is defined as
5 time constants of an exponentially decaying current pulse.
© Semiconductor Components Industries, LLC, 2005
MARKING
DIAGRAM
V
1
2
TO−220AB
CASE 221A−07
STYLE 3
3
A
Y
WW
G
AKA
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Diode Polarity
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
Device
Package
Shipping
MCR68−2
TO−220AB
500 Units / Box
MCR68−2G
TO−220AB
(Pb−Free)
500 Units / Box
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR68/D
MCR68−2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
2.0
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
60
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
−
−
−
−
10
2.0
mA
mA
−
−
−
6.0
2.2
−
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
IDRM, IRRM
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
Peak Forward On-State Voltage
(ITM = 24 A) (Note 3)
(ITM = 300 A, tw = 1 ms) (Note 4)
VTM
V
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 W)
IGT
2.0
7.0
30
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 W)
VGT
−
0.65
1.5
V
Gate Non−Trigger Voltage
(VD = 12 Vdc, RL = 100 W, TJ = 125°C)
VGD
0.2
0.40
−
V
Holding Current
(VD = 12 V, Initiating Current = 200 mA, Gate Open)
IH
3.0
15
50
mA
Latching Current
(VD = 12 Vdc, IG = 150 mA)
IL
−
−
60
mA
Gate Controlled Turn-On Time (Note 5)
(VD = Rated VDRM, IG = 150 mA)
(ITM = 24 A Peak)
tgt
−
1.0
−
ms
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Gate Open, Exponential Waveform, TJ = 125°C)
dv/dt
10
−
−
V/ms
Critical Rate-of-Rise of On-State Current
IG = 150 mA
di/dt
−
−
75
A/ms
DYNAMIC CHARACTERISTICS
TJ = 125°C
3. Pulse duration p 300 ms, duty cycle p 2%.
4. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various durations of an exponentially decaying current waveform. tw is defined
as 5 time constants of an exponentially decaying current pulse.
5. The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.
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2
MCR68−2
Voltage Current Characteristic of SCR
+ Current
Anode +
VTM
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On State Voltage
IH
Holding Current
on state
IH
IRRM at VRRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
I TM , PEAK DISCHARGE CURRENT (AMPS)
Anode −
NORMALIZED PEAK CURRENT
1000
300
200
ITM
50
tw
tw = 5 time constants
20
0.5
1.0
2.0
0.6
0.4
0
5.0
10
20
25
50
50
75
100
tw, PULSE CURRENT DURATION (ms)
TC, CASE TEMPERATURE (°C)
Figure 1. Peak Capacitor Discharge Current
Figure 2. Peak Capacitor Discharge Current
Derating
125
TC , MAXIMUM CASE TEMPERATURE (° C)
0.8
0.2
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
100
1.0
120
115
dc
110
105
100
Half Wave
95
90
85
80
75
1.0
2.0
5.0
8.0
20
18
Half Wave
14
dc
10
8.0
TJ = 125°C
4.0
2.0
1.0
10
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
Figure 3. Current Derating
2.0
4.0 5.0
8.0
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
Figure 4. Maximum Power Dissipation
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3
125
10
r(t), TRANSIENT THERMAL RESISTANCE(NORMALIZED)
MCR68−2
1
0.7
0.5
0.3
0.2
ZqJC(t) = RqJC • r(t)
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.3
0.5
1
2
3
5
10
20
30
50
100
200 300
500
1k
2k 3k
5k
10 k
t, TIME (ms)
5.0
NORMALIZED GATE TRIGGER VOLTAGE
10
VD = 12 Volts
RL = 100 W
3.0
2.0
1.0
0.5
0.3
0.2
−60
−40
−20
0
20
40
60
80 100
TJ, JUNCTION TEMPERATURE (°C)
120
1.4
1.0
0.8
0.5
−60
140
VD = 12 Volts
RL = 100 W
1.2
−40
−20
0
20
2.0
VD = 12 Volts
ITM = 100 mA
1.0
0.8
0.5
−40
−20
60
80
100
Figure 7. Gate Trigger Voltage
3.0
0.3
−60
40
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Trigger Current
NORMALIZED HOLD CURRENT
NORMALIZED GATE TRIGGER CURRENT
Figure 5. Thermal Response
0
20
40
60
80
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Holding Current
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4
100
120
140
120
140
MCR68−2
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−07
ISSUE AA
−T−
B
F
T
SEATING
PLANE
C
S
4
Q
A
1 2 3
U
H
K
Z
R
L
V
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−− 0.080
STYLE 3:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
CATHODE
ANODE
GATE
ANODE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MCR68/D