MCR68 SERIES.aspx?ext=

High-reliability discrete products
and engineering services since 1977
MCR68 SERIES
SILICON CONTROLLED RECTIFIERS
FEATURES


Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Peak repetitive off-state voltage(1)
(TJ = -40 to +125°C, gate open)
MCR68-1
MCR68-2
MCR68-3
Value
Unit
25
50
100
V
VDRM
VRRM
Peak discharge current (2)
ITM
300
A
On-state RMS current (180° conduction angles, TC = 85°C)
IT(RMS)
12
A
Average on-state current (180° conduction angles, TC = 85°C)
IT(AV)
8.0
A
Peak non-repetitive surge current
(half-cycle, sine wave, 60Hz, TJ = 125°C)
ITSM
Circuit fusing consideration (t = 8.3ms)
I2t
40
Forward peak gate current (pulse width ≤ 1.0µs, TC = 85°C)
IGM
2.0
A
Forward peak gate power (pulse width ≤ 1.0µs, TC = 85°C)
PGM
20
W
Forward average gate power (t = 8.3ms, TC = 85°C)
A
100
A2s
PG(AV)
0.5
W
Operating junction temperature range
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
-
8.0
In. lb.
Mounting torque
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Note 2: Ratings apply for tw = 1ms,
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum
Unit
Thermal resistance, junction to case
RӨJC
2.0
°C/W
Thermal resistance, junction to ambient
RӨJA
60
°C/W
TL
260
°C
Maximum lead temperature for soldering purposes
1/8” from case for 10s
Rev. 20130115
High-reliability discrete products
and engineering services since 1977
MCR68 SERIES
SILICON CONTROLLED RECTIFIERS
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
-
-
10
2.0
µA
mA
-
6.0
2.2
-
V
2.0
7.0
30
-
0.65
1.5
0.2
0.40
-
OFF CHARACTERISTICS
Peak forward or reverse blocking current
(VAK = Rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
ON CHARACTERISTICS
Peak forward on-state voltage
(ITM = 24A)(3)
(ITM = 300A, tw = 1ms)(4)
VTM
Gate trigger current (continuous dc)
(VD = 12V, RL = 100Ω)
IGT
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 100Ω)
VGT
Gate non-trigger voltage
(VD = 12V, RL = 100Ω, T J = 125°C)
VGD
Holding current
(VD = 12V, gate open, initiating current = 200mA)
IH
Latching current
(VD = 12V, IG = 150mA)
IL
Gate controlled turn-on time(5)
(VD = rated VDRM, IG = 150mA)
(ITM = 24A peak)
tgt
mA
V
V
mA
3.0
15
50
-
-
60
-
1.0
-
10
-
-
-
-
75
mA
µs
DYNAMIC CHARACTERISTICS
Critical rate of rise of off-state voltage
(VD = rated VDRM, exponential waveform, gate open, TJ = 125°C)
dv/dt
Critical rate of rise of on-state current
(IG = 150mA, TJ = 125°C)
di/dt
V/µs
A/µs
Note 3: Pulse width≤ 300µs, duty cycle ≤ 2%.
Note 4: Ratings apply for tw = 1ms.
Note 5: The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.
Rev. 20130115
High-reliability discrete products
and engineering services since 1977
MCR68 SERIES
SILICON CONTROLLED RECTIFIERS
MECHANICAL CHARACTERISTICS
Case:
TO-220AB
Marking:
Body painted, alpha-numeric
Pin out:
See below
Rev. 20130115
High-reliability discrete products
and engineering services since 1977
MCR68 SERIES
SILICON CONTROLLED RECTIFIERS
Rev. 20130115
High-reliability discrete products
and engineering services since 1977
MCR68 SERIES
SILICON CONTROLLED RECTIFIERS
Rev. 20130115
High-reliability discrete products
and engineering services since 1977
MCR68 SERIES
SILICON CONTROLLED RECTIFIERS
Rev. 20130115