BAS16P2T5G Switching Diode The BAS16P2T5G Switching Diode is a spin−off of our popular SOT−23 three−leaded device. It is designed for switching applications and is housed in the SOD−923 surface mount package. This device is ideal for low−power surface mount applications, where board space is at a premium. http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 1 CATHODE Compliant 2 ANODE MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 100 Vdc Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM 2 1 A6M SOD−923 CASE 514AA PLASTIC 1 2 A6 = Specific Device Code M = Month Code THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Characteristic RqJA PD 520 240 °C/W mW Thermal Resistance, Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C RqJA PD 175 710 °C/W mW TJ, Tstg −55 to +150 °C Junction and Storage Temperature Range ORDERING INFORMATION Device BAS16P2T5G Package Shipping† SOD−923 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06″ thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06″ thick single sided. Operating to steady state. © Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 1 1 Publication Order Number: BAS16P2/D BAS16P2T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max − − − − 1.0 100 50 30 100 − − − − − 715 855 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 75 Vdc) (VR = 100 Vdc) (VR = 75 Vdc, TJ = 150°C) (VR = 25 Vdc, TJ = 150°C) IR Reverse Breakdown Voltage (IBR = 100 mAdc) V(BR) mAdc Vdc Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 2.0 pF Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) VFR − 1.75 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 W) trr − 6.0 ns Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 W) QS − 45 pC http://onsemi.com 2 mV BAS16P2T5G 820 W +10 V 2.0 k IF 100 mH tp tr 0.1 mF IF t trr 10% t 0.1 mF 90% D.U.T. 50 W INPUT SAMPLING OSCILLOSCOPE 50 W OUTPUT PULSE GENERATOR iR(REC) = 1.0 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) INPUT SIGNAL Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 10 100 IR , REVERSE CURRENT (μA) TA = 85°C 10 TA = -40°C 1.0 TA = 25°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 0 1.2 10 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 0.68 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150°C 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 3 8 50 BAS16P2T5G PACKAGE DIMENSIONS SOD−923 CASE 514AA ISSUE E D −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− E 1 2X b 0.08 X Y 2 TOP VIEW DIM A b c D E HE L L2 A c HE SIDE VIEW MILLIMETERS MIN NOM MAX 0.34 0.39 0.43 0.15 0.20 0.25 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.95 1.00 1.05 0.19 REF 0.05 0.10 0.15 INCHES MIN NOM MAX 0.013 0.015 0.017 0.006 0.008 0.010 0.003 0.005 0.007 0.030 0.031 0.033 0.022 0.024 0.026 0.037 0.039 0.041 0.007 REF 0.002 0.004 0.006 SOLDERING FOOTPRINT* 2X L 2X 0.36 2X L2 PACKAGE OUTLINE BOTTOM VIEW 1.20 2X 0.25 DIMENSIONS: MILLIMETERS See Application Note AND8455/D for more mounting details *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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