ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection http://onsemi.com The ESD9X Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space is at a premium. 1 2 PIN 1. CATHODE 2. ANODE Specification Features: • Low Clamping Voltage • Small Body Outline Dimensions: • • • • • • • • MARKING DIAGRAM 0.039″ x 0.024″ (1.0 mm x 0.60 mm) Low Body Height: 0.017″ (0.43 mm) Max Stand−off Voltage: 3.3 V − 12 V Low Leakage Response Time is Typically < 1 ns ESD Rating of Class 3 (> 16 kV) per Human Body Model IEC61000−4−2 Level 4 ESD Protection SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic Epoxy Meets UL 94 V−0 LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any X M Device Meets MSL 1 Requirements ORDERING INFORMATION Device Package Shipping† ESD9XxxST5G SOD−923 (Pb−Free) 8000/Tape & Reel SZESD9XxxST5G SOD−923 (Pb−Free) 8000/Tape & Reel MAXIMUM RATINGS Value Unit Contact Air ±30 ±30 kV Per Human Body Model Per Machine Model 16 400 kV V ⎪ PD 150 mW TJ, Tstg −55 to +150 °C TL 260 °C IEC 61000−4−2 (ESD) ESD Voltage Symbol Total Power Dissipation on FR−5 Board (Note 1) @ TA = 25°C Junction and Storage Temperature Range Lead Solder Temperature − Maximum (10 Second Duration) = Specific Device Code = Date Code †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. QUALIFIED MAX REFLOW TEMPERATURE: 260°C Rating XM SOD−923 CASE 514AA DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 2 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. © Semiconductor Components Industries, LLC, 2012 October, 2012 − Rev. 7 1 Publication Order Number: ESD9X3.3ST5G/D ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) Symbol IF Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR Working Peak Reverse Voltage VBR Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation V IR VF IT Breakdown Voltage @ IT IT C VC VBR VRWM Maximum Reverse Leakage Current @ VRWM IPP Max. Capacitance @VR = 0 and f = 1 MHz *See Application Note AND8308/D for detailed explanations of datasheet parameters. Uni−Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types) VRWM (V) IR (mA) @ VRWM VBR (V) @ IT (Note 2) IT Max IPP (A) (Note 3) VC (V) @ Max IPP (Note 3) Ppk (W) (8 x 20 ms) C (pF) VC Max Typ Typ Per IEC61000−4−2 (Note 4) Device* Device Marking Max Max Min mA ESD9X3.3ST5G A 3.3 2.5 5.0 1.0 9.8 10.4 102 80 ESD9X5.0ST5G B 5.0 1.0 6.2 1.0 8.7 12.3 107 65 ESD9X7.0ST5G 5** 7.0 0.1 7.5 1.0 4.0 25 100 65 ESD9X12ST5G C 12 1.0 13.5 1.0 5.9 23.7 140 30 Figures 1 and 2 (Note 5) * Include SZ-prefix devices where applicable. **Rotated 270 degrees. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. 3. Surge current waveform per Figure 5. 4. For test procedure see Figures 3 and 4 and Application Note AND8307/D. 5. ESD9X5.0ST5G shown below. Other voltages available upon request. Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV contact per IEC 61000−4−2 Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV contact per IEC 61000−4−2 http://onsemi.com 2 ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 3. IEC61000−4−2 Spec ESD Gun Oscilloscope TVS 50 W Cable 50 W Figure 4. Diagram of ESD Test Setup The following is taken from Application Note AND8308/D − Interpretation of Datasheet Parameters for ESD Devices. systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D. ESD Voltage Clamping For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000−4−2 waveform. Since the IEC61000−4−2 was written as a pass/fail spec for larger % OF PEAK PULSE CURRENT 100 PEAK VALUE IRSM @ 8 ms tr 90 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 t, TIME (ms) 60 Figure 5. 8 X 20 ms Pulse Waveform http://onsemi.com 3 80 ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series 7.4 20 7.3 18 7.2 16 7.1 14 7.0 IR (nA) BREAKDOWN VOLTAGE (VOLTS) (VZ @ IZ) TYPICAL CHARACTERISTICS 6.9 6.8 6.7 12 10 8 6.6 6 6.5 4 6.4 2 6.3 −55 0 −55 + 150 + 25 TEMPERATURE (°C) Figure 6. Typical Breakdown Voltage versus Temperature + 25 TEMPERATURE (°C) Figure 7. Typical Leakage Current versus Temperature http://onsemi.com 4 + 150 ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series PACKAGE DIMENSIONS SOD−923 CASE 514AA ISSUE E D −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− E 1 2X b 0.08 X Y 2 TOP VIEW DIM A b c D E HE L L2 A c HE SIDE VIEW MILLIMETERS MIN NOM MAX 0.34 0.39 0.43 0.15 0.20 0.25 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.95 1.00 1.05 0.19 REF 0.05 0.10 0.15 INCHES MIN NOM MAX 0.013 0.015 0.017 0.006 0.008 0.010 0.003 0.005 0.007 0.030 0.031 0.033 0.022 0.024 0.026 0.037 0.039 0.041 0.007 REF 0.002 0.004 0.006 SOLDERING FOOTPRINT* 2X L 2X 0.36 2X L2 PACKAGE OUTLINE BOTTOM VIEW 1.20 2X 0.25 DIMENSIONS: MILLIMETERS See Application Note AND8455/D for more mounting details *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative ESD9X3.3ST5G/D