BAS21HT1G, NSVBAS21HT1G, NSVBAS21HT3G High Voltage Switching Diode http://onsemi.com Features • NSV Prefix for Automotive and Other Applications Requiring • HIGH VOLTAGE SWITCHING DIODE Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices MAXIMUM RATINGS Rating Continuous Reverse Voltage Repetitive Peak Reverse Voltage Peak Forward Current Repetitive Peak Forward Current Non−Repetitive Peak Forward Surge Current, 60 Hz Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 10 ms t = 100 ms t = 1 ms t=1s Symbol Value Unit VR 250 Vdc VRRM 250 Vdc IF 200 mAdc IFRM 500 mA IFSM(surge) 625 mAdc IFSM Max Unit Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C PD 200 mW 1.57 mW/°C RqJA 635 °C/W TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 Minimum Pad June, 2013 − Rev. 10 = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) Symbol © Semiconductor Components Industries, LLC, 2013 JS M G G *Date Code orientation may vary depending upon manufacturing location. Characteristic Junction and Storage Temperature Range MARKING DIAGRAM SOD−323 CASE 477 STYLE 1 1 JS M G 20 20 10 4 1 2 ANODE 2 A THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient 1 CATHODE 1 ORDERING INFORMATION Package Shipping† BAS21HT1G SOD−323 (Pb−Free) 3000 / Tape & Reel NSVBAS21HT1G SOD−323 (Pb−Free) 3000 / Tape & Reel NSVBAS21HT3G SOD−323 (Pb−Free) 10000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BAS21HT1/D BAS21HT1G, NSVBAS21HT1G, NSVBAS21HT3G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max − − 0.1 100 250 − − − 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) IR Reverse Breakdown Voltage (IBR = 100 mAdc) V(BR) mAdc Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 W) trr − 50 ns 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% D.U.T. 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE iR(REC) = 3.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 BAS21HT1G, NSVBAS21HT1G, NSVBAS21HT3G TA = −55°C 1000 25°C 800 REVERSE CURRENT (nA) FORWARD VOLTAGE (mV) 1200 155°C 600 400 200 1 1 10 100 7000 6000 5000 4000 3000 4 3 2 TA = 25°C TA = −55°C 1 2 5 10 20 50 100 FORWARD CURRENT (mA) REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage 200 300 25 1.0 0.9 Based on square wave currents TJ = 25°C prior to surge 20 0.8 0.7 IFSM (A) Cd, DIODE CAPACITANCE (pF) 6 5 1 0 1000 TA = 155°C 0.6 15 10 0.5 5 0.4 0.3 0 1 2 3 4 5 6 7 0 8 0.001 0.01 0.1 1 VR, REVERSE VOLTAGE (V) Tp (mSec) Figure 4. Diode Capacitance Figure 5. Maximum Non−repetitive Peak Forward Current as a Function of Pulse Duration, Typical Values http://onsemi.com 3 10 BAS21HT1G, NSVBAS21HT1G, NSVBAS21HT3G PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE G HE D b 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 A1 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE 2. ANODE SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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