BAS116L Switching Diode Features • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm Tape and Reel • • www.onsemi.com Use BAS116LT1G to order the 7 inch/3,000 unit reel S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 ANODE 3 CATHODE 3 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Peak Forward Surge Current 1 2 SOT−23 (TO−236) CASE 318 STYLE 8 THERMAL CHARACTERISTICS Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. MARKING DIAGRAM JV M G G JV = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† BAS116LT1G SBAS116LT1G SOT−23 3000 / Tape & Reel (Pb−Free) BAS116LT3G NSVBAS116LT3G SOT−23 (Pb−Free) 10000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 May, 2016 − Rev. 11 1 Publication Order Number: BAS116LT1/D BAS116L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 75 − Vdc Reverse Voltage Leakage Current (VR = 75 Vdc) Reverse Voltage Leakage Current (VR = 75 Vdc, TJ = 150°C) IR − − 5.0 80 nAdc Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Voltage (IF = 150 mAdc) VF − − − − 900 1000 1100 1250 mV Diode Capacitance (VR = 0 V, f = 1.0 MHz) CD − 2.0 pF Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr − 3.0 ms OFF CHARACTERISTICS Reverse Breakdown Voltage (IBR = 100 mAdc) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% DUT 50 W Output Pulse Generator 50 W INPUT SAMPLING OSCILLOSCOPE iR(REC) = 1.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 BAS116L TYPICAL CHARACTERISTICS 100 IR, REVERSE CURRENT (nA) 100 150°C 25°C −55°C 10 1 0.1 TA = 150°C 10 1.0 25°C 0.1 −55°C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 60 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Leakage Current 1.2 CT, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1,000 TA = 25°C 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 60 VR, REVERSE VOLTAGE (V) Figure 4. Capacitance www.onsemi.com 3 70 80 70 80 BAS116L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 ° STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 4 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BAS116LT1/D