HN2D02FUTW1T1G, SHN2D02FUTW1T1G Ultra High Speed Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−88 package which is designed for low power surface mount applications. http://onsemi.com Features Fast trr, < 3.0 ns Low CD, < 2.0 pF AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* SC−88 CASE 419B STYLE 1 MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit VR 80 V VRM 85 V IF 100 mAdc Peak Forward Current (Note 1) IFM 240 mAdc Peak Forward Surge Current (10 ms) (Note 1) IFSM 1.0 Adc Reverse Voltage Peak Reverse Voltage Forward Current (Note 1) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This is maximum rating for a single diode. In the case of using 2 or 3 diodes, the maximum ratings per diodes is 75% of the single diode. THERMAL CHARACTERISTICS Rating 6 5 4 1 2 3 MARKING DIAGRAM 6 R7 M G G 1 R7 M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Symbol Max Unit Power Dissipation PD 300 mW Junction Temperature TJ 150 C Storage Temperature Tstg −55 to + 150 C Package Shipping† HN2D02FUTW1T1G SC−88 (Pb−Free) 3000 / Tape & Reel SHN2D02FUTW1T1G SC−88 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 4 1 Publication Order Number: HN2D02FUTW1T1/D HN2D02FUTW1T1G, SHN2D02FUTW1T1G ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristic Symbol Condition Min Max Unit IR VR = 30 V − 0.1 mAdc VR = 80 V − 0.5 Reverse Voltage Leakage Current Forward Voltage VF IF = 100 mA − 1.2 Vdc Reverse Breakdown Voltage VR IR = 100 mA 80 − Vdc Diode Capacitance CD VR = 0, f = 1.0 MHz − 2.0 pF trr (Note 2) IF = 10 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR − 3.0 ns Reverse Recovery Time (Figure 1) 2. trr Test Circuit RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE tr OUTPUT PULSE tp trr IF t 10% RL A Irr = 0.1 IR 90% VR IF = 10 mA VR = 6 V RL = 100 W tp = 2 ms tr = 0.35 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit 10 I R, REVERSE CURRENT (A) 10 TA = 85C TA = 25C 1.0 TA = 150C TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 TA = -40C TA = 25C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 0.001 1.2 0 Figure 2. Forward Voltage 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 0.68 CD , DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 2 8 50 HN2D02FUTW1T1G, SHN2D02FUTW1T1G PACKAGE DIMENSIONS SC−88 (SOT−363) CASE 419B−02 ISSUE W D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. e 6 5 4 HE DIM A A1 A3 b C D E e L HE −E− 1 2 3 b 6 PL 0.2 (0.008) M E M A3 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 C A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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