M1MA151WK, M1MA152WK Common Cathode Silicon Dual Switching Diodes These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount applications. SC−59 PACKAGE SINGLE SILICON Features • Fast trr, < 3.0 ns • Low CD, < 2.0 pF • S and NSV Prefix for Automotive and Other Applications Requiring • www.onsemi.com SWITCHING DIODES 40 V/80 V 100 mA SURFACE MOUNT Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant SC−59 CASE 318D STYLE 3 MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage M1MA151WK M1MA152WK 3 CATHODE Symbol Value Unit 40 80 Vdc 40 80 Vdc 100 150 mAdc MARKING DIAGRAM 225 340 mAdc Mx M G G 500 750 mAdc VR Peak Reverse Voltage M1MA151WK M1MA152WK Forward Current Single Dual VRM 1 IF Peak Forward Current Single Dual Peak Forward Surge Current Single Dual IFM IFSM (Note 1) THERMAL CHARACTERISTICS Symbol Max Unit Power Dissipation Rating PD 200 mW Junction Temperature TJ 150 °C Storage Temperature Tstg −55 to + 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. t = 1 sec ANODE 2 Mx = Device Code x =T for 151 U for 152 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† M1MA151WKT1G SC−59 (Pb−Free) 3,000 / Tape & Reel SM1MA151WKT1G SC−59 (Pb−Free) 3,000 / Tape & Reel M1MA152WKT1G SC−59 (Pb−Free) 3,000 / Tape & Reel NSVM1MA152WKT1G SC−59 (Pb−Free) 3,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 May, 2015 − Rev. 12 1 Publication Order Number: M1MA151WKT1/D M1MA151WK, M1MA152WK ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Reverse Voltage Leakage Current M1MA151WK M1MA152WK Condition Min Max Unit VR = 35 V VR = 75 V − − 0.1 0.1 mAdc IF = 100 mA − 1.2 Vdc IR = 100 mA 40 80 − − Vdc IR Forward Voltage VF Reverse Breakdown Voltage M1MA151WK M1MA152WK VR Diode Capacitance CD VR = 0, f = 1.0 MHz − 2.0 pF trr (Note 2) IF = 10 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR − 3.0 ns Reverse Recovery Time (Figure 1) 2. trr Test Circuit RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE tr OUTPUT PULSE tp trr IF t t A 10% RL Irr = 0.1 IR 90% VR tp = 2 ms tr = 0.35 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit www.onsemi.com 2 IF = 10 mA VR = 6 V RL = 100 W M1MA151WK, M1MA152WK 100 IR, REVERSE CURRENT (mA) 100 10 1 155°C 0.1 0 0.2 TA = −55°C 25°C 0.4 0.6 0.8 1 TA = 150°C 10 1 0.1 TA = 25°C 0.01 0.001 TA = −55°C 0.0001 0.00001 1.2 0 1.4 10 20 30 40 50 60 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage 0.64 Cd, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1000 0.62 0.6 0.58 0.56 0.54 0.52 0.5 0 1 2 3 4 5 6 VR, REVERSE VOLTAGE (V) Figure 4. Diode Capacitance www.onsemi.com 3 7 8 70 80 M1MA151WK, M1MA152WK PACKAGE DIMENSIONS SC*59 CASE 318D*04 ISSUE H D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3 HE 1 DIM A A1 b c D E e L HE E 2 b e MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE C A MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 L A1 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb *Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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