M1MA151WKT1, M1MA152WKT1 Preferred Device Common Cathode Silicon Dual Switching Diodes These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount applications. http://onsemi.com SC−59 PACKAGE SINGLE SILICON SWITCHING DIODES 40 V/80 V 100 mA Features SURFACE MOUNT • Fast trr, < 3.0 ns • Low CD, < 2.0 pF • Pb−Free Packages are Available 3 CATHODE MAXIMUM RATINGS (TA = 25°C) Rating Symbol Reverse Voltage Value Unit 40 80 Vdc 2 VR M1MA151WKT1 M1MA152WKT1 Peak Reverse Voltage VRM M1MA151WKT1 M1MA152WKT1 ANODE 1 SC−59 CASE 318D 40 80 Vdc 100 150 mAdc MARKING DIAGRAM 225 340 mAdc Mx M G G 500 750 mAdc Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 °C Storage Temperature Tstg −55 to + 150 °C Forward Current 1 IF Single Dual Peak Forward Current IFM Single Dual Peak Forward Surge Current Single Dual IFSM (Note 1) THERMAL CHARACTERISTICS Rating Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. t = 1 SEC Mx = Device Code x = T for 151 U for 152 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device M1MA151WKT1 M1MA151WKT1G M1MA152WKT1 M1MA152WKT1G Package Shipping† SC−59 3000/Tape & Reel SC−59 (Pb−Free) 3000/Tape & Reel SC−59 3000/Tape & Reel SC−59 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 8 1 Publication Order Number: M1MA151WKT1/D M1MA151WKT1, M1MA152WKT1 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Condition Min Max Unit VR = 35 V VR = 75 V − 0.1 mAdc IF = 100 mA − 1.2 Vdc IR = 100 mA 40 80 − Vdc CD VR = 0, f = 1.0 MHz − 2.0 pF trr (Note 2) IF = 10 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR − 3.0 ns Reverse Voltage Leakage Current IR M1MA151WKT1 M1MA152WKT1 Forward Voltage VF Reverse Breakdown Voltage VR M1MA151WKT1 M1MA152WKT1 Diode Capacitance Reverse Recovery Time (Figure 1) 2. trr Test Circuit RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE tr OUTPUT PULSE tp t A IF trr t 10% RL Irr = 0.1 IR 90% VR tp = 2 ms tr = 0.35 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit http://onsemi.com 2 IF = 10 mA VR = 6 V RL = 100 W M1MA151WKT1, M1MA152WKT1 PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. D 3 HE 2 DIM A A1 b c D E e L HE E 1 b e MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 C A L A1 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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