NCP1729 Switched Capacitor Voltage Inverter The NCP1729 is a CMOS charge pump voltage inverter that is designed for operation over an input voltage range of 1.5 V to 5.5 V with an output current capability in excess of 50 mA. The operating current consumption is only 122 mA, and a power saving shutdown input is provided to further reduce the current to a mere 0.4 mA. The device contains a 35 kHz oscillator that drives four low resistance MOSFET switches, yielding a low output resistance of 26 W and a voltage conversion efficiency of 99%. This device requires only two external 3.3 mF capacitors for a complete inverter making it an ideal solution for numerous battery powered and board level applications. The NCP1729 is available in the space saving TSOP−6 package. www.onsemi.com MARKING DIAGRAM 1 TSOP−6 (SOT23−6) SN SUFFIX CASE 318G 6 XXXAYW G G 1 Features • • • • • • • • • Operating Voltage Range of 1.5 V to 5.5 V Output Current Capability in Excess of 50 mA Low Current Consumption of 122 mA Power Saving Shutdown Input for a Reduced Current of 0.4 mA Operation at 35 kHz Low Output Resistance of 26 W Space Saving TSOP−6 Package NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant XXX A Y W G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS Vout 1 6 C+ Vin 2 5 SHDN C− 3 4 GND Typical Applications • • • • • • • • LCD Panel Bias Cellular Telephones Pagers Personal Digital Assistants Electronic Games Digital Cameras Camcorders Hand Held Instruments (Top View) ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 22 of this data sheet. −Vout Vin 1 6 2 5 3 4 This device contains 77 active transistors. Figure 1. Typical Application © Semiconductor Components Industries, LLC, 2016 February, 2016 − Rev. 6 1 Publication Order Number: NCP1729/D NCP1729 MAXIMUM RATINGS* ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Symbol Value Unit Input Voltage Range (Vin to GND) Rating Vin −0.3 to 6.0 V Output Voltage Range (Vout to GND) Vout −6.0 to 0.3 V Output Current Iout 100 mA Output Short Circuit Duration (Vout to GND) tSC Indefinite sec Operating Junction Temperature TJ 150 °C Power Dissipation and Thermal Characteristics Thermal Resistance, Junction−to−Air Maximum Power Dissipation @ TA = 70°C RqJA PD 256 313 °C/W mW Storage Temperature Tstg −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *ESD Ratings ESD Machine Model Protection up to 200 V, Class B ESD Human Body Model Protection up to 2000 V, Class 2 ELECTRICAL CHARACTERISTICS (Vin = 5.0 V, C1 = 3.3 mF, C2 = 3.3 mF, TA = −40°C to 85°C, typical values shown are for TA = 25°C unless otherwise noted. See Figure 14 for Test Setup.) Symbol Min Typ Max Unit Operating Supply Voltage Range (SHDN = Vin, RL = 10 k) Vin 1.5 − 5.5 V Supply Current Device Operating (SHDN = 5.0 V, RL = R) TA = 25°C TA = 85°C Iin − − 122 128 200 200 − − 0.4 1.7 − − 24.5 19 33.5 − 45.6 54 Characteristic mA mA Supply Current Device Shutdown (SHDN = 0 V) TA = 25°C TA = 85°C ISHDN Oscillator Frequency TA = 25°C TA = −40°C to 85°C fOSC Output Resistance (Iout = 25 mA, Note 1) Rout − 26 50 W Voltage Conversion Efficiency (RL = R) VEFF 99 99.9 − % Power Conversion Efficiency (RL = 1.0 k) PEFF − 96 − % − − 0.6 Vin 0.5 Vin − − Shutdown Input Threshold Voltage (Vin = 1.5 V to 5.5 V) High State, Device Operating Low State, Device Shutdown Vth(SHDN) Shutdown Input Bias Current High State, Device Operating, SHDN = 5.0 V TA = 25°C TA = 85°C Low State, Device Shutdown, SHDN = 0 V TA = 25°C TA = 85°C Wake−Up Time from Shutdown (RL = 1.0 k) kHz V pA IIH − − 5.0 100 − − − − 5.0 100 − − − 1.0 − IIL tWKUP ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Capacitors C1 and C2 contribution is approximately 20% of the total output resistance. www.onsemi.com 2 NCP1729 TYPICAL CHARACTERISTICS 100 90 Rout, OUTPUT RESISTANCE (W) Rout, OUTPUT RESISTANCE (W) 100 Figure 14 Test Setup TA = 25°C 80 70 60 50 40 30 20 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Figure 14 Test Setup 90 80 Vin = 1.5 V 70 Vin = 2.0 V 60 50 40 30 20 −50 5.5 Vin, SUPPLY VOLTAGE (V) 30 Vin = 4.75 V Vout = −4.00 V 20 Vin = 3.15 V Vout = −2.50 V 10 Vin = 1.90 V Vout = −1.50 V 5 0 0 10 20 Figure 14 Test Setup TA = 25°C 30 200 150 Vin = 3.15 V Vout = −2.50 V 100 Vin = 1.90 V Vout = −1.50 V 50 0 10 20 30 40 Figure 4. Output Current vs. Capacitance Figure 5. Output Voltage Ripple vs. Capacitance Figure 14 Test Setup RL = ∞ TA = 85°C 90 TA = 25°C TA = −40°C 70 60 50 2.0 2.5 3.0 3.5 4.0 100 Vin = 4.75 V Vout = −4.00 V 250 C1, C2, C3, CAPACITANCE (mF) fOSC, OSCILLATOR FREQUENCY (kHz) Iin, SUPPLY CURRENT (mA) 75 C1, C2, C3, CAPACITANCE (mF) 100 40 1.5 50 Figure 14 Test Setup TA = 25°C 300 0 110 80 25 350 50 40 130 120 0 Figure 3. Output Resistance vs. Ambient Temperature Vout, OUTPUT VOLTAGE RIPPLE (mVp−p) Iout, OUTPUT CURRENT (mA) 35 15 −25 TA, AMBIENT TEMPERATURE (°C) Figure 2. Output Resistance vs. Supply Voltage 25 Vin = 3.3 V Vin = 5.0 V 4.5 5.0 39 Figure 14 Test Setup 38 Vin = 1.5 V 37 36 Vin = 3.3 V 35 Vin = 5.0 V 34 33 32 −50 −25 0 25 50 75 Vin, SUPPLY VOLTAGE (V) TA, AMBIENT TEMPERATURE (°C) Figure 6. Supply Current vs. Supply Voltage Figure 7. Oscillator Frequency vs. Ambient Temperature www.onsemi.com 3 50 100 NCP1729 Vout, OUTPUT VOLTAGE (V) 0.0 Figure 14 Test Setup TA = 25°C Vin = 2.0 V −1.0 −2.0 Vin = 3.3 V −3.0 Vin = 5.0 V −4.0 −5.0 −6.0 10 20 30 40 50 Vin = 5.0 V 80 70 Vin = 3.3 V 60 Vin = 1.5 V Vin = 2.0 V 50 40 0 10 20 30 40 Figure 9. Power Conversion Efficiency vs. Output Current OUTPUT VOLTAGE RIPPLE AND NOISE = 10 mV / Div. AC COUPLED 1.50 RL = 10 kW SHDN = GND Vin = 5.0 V 1.25 Vin = 3.3 V 1.00 0.75 Vin = 1.5 V 0.50 0.25 −50 −25 0 25 50 75 TA, AMBIENT TEMPERATURE (°C) Figure 10. Output Voltage Ripple and Noise Figure 11. Shutdown Supply Current vs. Ambient Temperature WAKEUP TIME FROM SHUTDOWN 4.5 4.0 Low State, Device Shutdown High State, Device Operating 3.0 2.5 2.0 1.0 1.5 2.0 2.5 SHDN = 5.0V/Div. Vin = 5.0 V RL = 1.0 kW TA = 25°C Vout = 1.0 V/Div. 3.0 TIME = 400 ms / Div. Vth(SHND), SHUTDOWN INPUT VOLTAGE THRESHOLD (V) Figure 13. Wakeup Time From Shutdown Figure 12. Supply Voltage vs. Shutdown Input Voltage Threshold www.onsemi.com 4 50 1.75 TIME = 10 ms / Div. TA = 25°C Vin, SUPPLY VOLTAGE (V) 90 Figure 8. Output Voltage vs. Output Current 5.0 1.5 0.5 Figure 14 Test Setup TA = 25°C Iout, OUTPUT CURRENT (mA) Figure 14 Test Setup Vin = 3.3 V Iout = 5.0 mA TA = 25°C 3.5 100 Iout, OUTPUT CURRENT (mA) ISHDN, SHUTDOWN SUPPLY CURRENT (mA) 0 h, POWER CONVERSION EFFICIENCY (%) TYPICAL CHARACTERISTICS 100 NCP1729 Charge Pump Efficiency −Vout C + 2 6 1 The overall power conversion efficiency of the charge pump is affected by four factors: 1. Losses from power consumed by the internal oscillator, switch drive, etc. (which vary with input voltage, temperature and oscillator frequency). 2. I2R losses due to the on−resistance of the MOSFET switches on−board the charge pump. 3. Charge pump capacitor losses due to Equivalent Series Resistance (ESR). 4. Losses that occur during charge transfer from the commutation capacitor to the output capacitor when a voltage difference between the two capacitors exists. Most of the conversion losses are due to factors 2, 3 and 4. These losses are given by Equation 1. RL OSC Vin + C3 2 5 3 4 + C1 C1 = C2 = C3 = 3.3 mF Figure 14. Test Setup/Voltage Inverter DETAILED OPERATING DESCRIPTION The NCP1729 charge pump converter inverts the voltage applied to the Vin pin. Conversion consists of a two−phase operation (Figure 15). During the first phase, switches S2 and S4 are open and S1 and S3 are closed. During this time, C1 charges to the voltage on Vin and load current is supplied from C2. During the second phase, S2 and S4 are closed, and S1 and S3 are open. This action connects C1 across C2, restoring charge to C2. S1 ƪ P + I out 2 LOSS(2,3,4) 1 (f OSC )C1 ) 8R SWITCH R out ^ I out 2 ) 4ESR C1 ) ESR ƫ C2 (eq. 1) The 1/(fOSC)(C1) term in Equation 1 is the effective output resistance of an ideal switched capacitor circuit (Figures 16 and 17). The losses due to charge transfer above are also shown in Equation 2. The output voltage ripple is given by Equation 3. S2 Vin PLOSS + [ 0.5C 1 (Vin 2 * Vout 2) C1 ) 0.5C2 (VRIPPLE 2 * 2VoutVRIPPLE)] fOSC (eq. 2) C2 V S3 S4 RIPPLE + I out (f −Vout From OSC OSC )(C 2) ) 2(I out)(ESR ) C2 (eq. 3) f Vin Vout Figure 15. Ideal Switched Capacitor Charge Pump C1 C2 RL APPLICATIONS INFORMATION Figure 16. Ideal Switched Capacitor Model Output Voltage Considerations The NCP1729 performs voltage conversion but does not provide regulation. The output voltage will drop in a linear manner with respect to load current. The value of this equivalent output resistance is approximately 26 W nominal at 25°C with Vin = 5.0 V. Vout is approximately −5.0 V at light loads, and drops according to the equation below: VDROP + Iout REQUIV Vin Vout R Rout EQUIV + f 1 C1 C2 RL Vout + * (Vin * VDROP) Figure 17. Equivalent Output Resistance www.onsemi.com 5 NCP1729 Capacitor Selection Vout to GND, it is recommended that a large value capacitor (at least equal to C1) be connected from Vin to GND. If the device is loaded from Vin to Vout, a small (0.7 mF) capacitor between the pins is sufficient. In order to maintain the lowest output resistance and output ripple voltage, it is recommended that low ESR capacitors be used. Additionally, larger values of C1 will lower the output resistance and larger values of C2 will reduce output voltage ripple. (See Equation 3). Table 1 shows various values of C1, C2 and C3 with the corresponding output resistance values at 25°C. Table 2 shows the output voltage ripple for various values of C1, C2 and C3. The data in Tables 1 and 2 was measured not calculated. Voltage Inverter The most common application for a charge pump is the voltage inverter (Figure 14). This application uses two or three external capacitors. The C1 (pump capacitor) and C2 (output capacitor) are required. The input bypass capacitor C3, may be necessary depending on the application. The output is equal to −Vin plus any voltage drops due to loading. Refer to Tables 1 and 2 for capacitor selection. The test setup used for the majority of the characterization is shown in Figure 14. Table 1. Output Resistance vs. Capacitance (C1 = C2 = C3), Vin = 4.75 V and Vout = −4.0 V C1 = C2 = C3 (mF) Rout (W) 0.68 55.4 1.3 36.9 3.3 26.0 7.3 25.8 10 25.5 24 25.0 50 24.0 Layout Considerations As with any switching power supply circuit, good layout practice is recommended. Mount components as close together as possible to minimize stray inductance and capacitance. Also use a large ground plane to minimize noise leakage into other circuitry. Capacitor Resources Selecting the proper type of capacitor can reduce switching loss. Low ESR capacitors are recommended. The NCP1729 was characterized using the capacitors listed in Table 3. This list identifies low ESR capacitors for the voltage inverter application. Table 2. Output Voltage Ripple vs. Capacitance (C1 = C2 = C3), Vin = 4.75 V and Vout = −4.0 V C1 = C2 = C3 (mF) Output Voltage Ripple (mV) 0.68 322 1.3 205 3.3 120 7.3 69 10 56 24 32 50 20 Table 3. Capacitor Types Manufacturer/Contact AVX 843−448−9411 www.avxcorp.com Cornell Dubilier 508−996−8561 www.cornell−dubilier.com Input Supply Bypassing The input voltage, Vin should be capacitively bypassed to reduce AC impedance and minimize noise effects due to the switching internals in the device. If the device is loaded from TPS ESRD Sanyo/Os−con 619−661−6835 www.sanyovideo.com/oscon.htm SN SVP Vishay 603−224−1961 www.vishay.com 593D 594 www.onsemi.com 6 Part Types/Series NCP1729 −Vout 6 1 OSC + Vin 2 + 5 + 3 4 Capacitors = 3.3 mF Figure 18. Voltage Inverter The NCP1729 primary function is a voltage inverter. The device will convert 5.0 V into −5.0 V with light loads. Two capacitors are required for the inverter to function. A third capacitor, the input bypass capacitor, may be required depending on the power source for the inverter. The performance for this device is illustrated below. 0 Vout, OUTPUT VOLTAGE (V) TA = 25°C −1.0 Vin = 3.3 V −2.0 −3.0 Vin = 5.0 V −4.0 −5.0 −6.0 0 10 20 30 40 Iout, OUTPUT CURRENT (mA) Figure 19. Voltage Inverter Load Regulation, Output Voltage vs. Output Current www.onsemi.com 7 50 NCP1729 Vin −Vout 6 1 + + OSC + 2 6 1 OSC 5 + 2 5 3 4 + 3 4 Capacitors = 3.3 mF Figure 20. Cascaded Devices for Increased Negative Output Voltage Two or more devices can be cascaded for increased output voltage. Under light load conditions, the output voltage is approximately equal to −Vin times the number of stages. The converter output resistance increases dramatically with each additional stage. This is due to a reduction of input voltage to each successive stage as the converter output is loaded. Note that the ground connection for each successive stage must connect to the negative output of the previous stage. The performance characteristics for a converter consisting of two cascaded devices are shown below. −1.0 Vout, OUTPUT VOLTAGE (V) −2.0 −3.0 B −4.0 −5.0 −6.0 A −7.0 Curve Vin (V) Rout (W) −8.0 A 5.0 145 B 3.0 180 TA = 25°C −9.0 −10.0 0 10 20 30 40 Iout, OUTPUT CURRENT (mA) Figure 21. Cascade Load Regulation, Output Voltage vs. Output Current www.onsemi.com 8 NCP1729 6 1 OSC Vin −Vout + 2 5 + + 3 + + 4 Capacitors = 3.3 mF Figure 22. Negative Output Voltage Doubler A single device can be used to construct a negative voltage doubler. The output voltage is approximately equal to −2.0 Vin minus the forward voltage drop of each external diode. The performance characteristics for the above converter are shown below. Note that curves A and C show the circuit performance with economical 1N4148 diodes, while curves B and D are with lower loss MBRA120E Schottky diodes. Vout, OUTPUT VOLTAGE (V) 0 TA = 25°C −2.0 A −4.0 B −6.0 C −8.0 Curve Vin (V) All Diodes Rout (W) A 3.0 1N4148 118 B 3.0 MBRA120E 107 C 5.0 1N4148 91 D 5.0 MBRA120E 85 D −10.0 0 10 20 30 40 Iout, OUTPUT CURRENT (mA) Figure 23. Doubler Load Regulation, Output Voltage vs. Output Current www.onsemi.com 9 NCP1729 6 1 OSC Vin −Vout 2 + 5 + + 3 + + + + 4 Capacitors = 3.3 mF Figure 24. Negative Output Voltage Tripler A single device can be used to construct a negative voltage tripler. The output voltage is approximately equal to −3.0 Vin minus the forward voltage drop of each external diode. The performance characteristics for the above converter are shown below. Note that curves A and C show the circuit performance with economical 1N4148 diodes, while curves B and D are with lower loss MBRA120E Schottky diodes. 0 Vout, OUTPUT VOLTAGE −2.0 A −4.0 B −6.0 C −8.0 D −10.0 −12.0 −14.0 TA = 25°C −16.0 0 10 20 30 40 50 Iout, OUTPUT CURRENT Figure 25. Tripler Load Regulation, Output Voltage vs. Output Current www.onsemi.com 10 Curve Vin (V) All Diodes Rout (W) A 3.0 1N4148 247 B 3.0 MBRA120E 228 C 5.0 1N4148 198 D 5.0 MBRA120E 188 NCP1729 6 1 OSC + Vin + 2 5 3 4 + Vout Capacitors = 3.3 mF Figure 26. Positive Output Voltage Doubler A single device can be used to construct a positive voltage doubler. The output voltage is approximately equal to 2.0 Vin minus the forward voltage drop of each external diode. The performance characteristics for the above converter are shown below. Note that curves A and C show the circuit performance with economical 1N4148 diodes, while curves B and D are with lower loss MBRA120E Schottky diodes. 10.0 Vout, OUTPUT VOLTAGE (V) D 8.0 C 6.0 Curve Vin (V) All Diodes Rout (W) A 3.0 1N4148 32 B 3.0 MBRA120E 25 C 5.0 1N4148 24 D 5.0 MBRA120E 19.3 B 4.0 A 2.0 TA = 25°C 0 0 10 20 30 40 Iout, OUTPUT CURRENT (mA) Figure 27. Doubler Load Regulation, Output Voltage vs. Output Current www.onsemi.com 11 NCP1729 6 1 OSC + Vin + 2 + Vout 5 + 3 + 4 Capacitors = 3.3 mF Figure 28. Positive Output Voltage Tripler A single device can be used to construct a positive voltage tripler. The output voltage is approximately equal to 3.0 Vin minus the forward voltage drop of each external diode. The performance characteristics for the above converter are shown below. Note that curves A and C show the circuit performance with economical 1N4148 diodes, while curves B and D are with lower loss MBRA120E Schottky diodes. 14.0 Vout, OUTPUT VOLTAGE (V) D 12.0 10.0 C Curve Vin (V) All Diodes Rout (W) A 3.0 1N4148 110 B 3.0 MBRA120E 95 C 5.0 1N4148 88 D 5.0 MBRA120E 78 8.0 B 6.0 4.0 A 2.0 TA = 25°C 0 0 10 20 30 40 50 Iout, OUTPUT CURRENT (mA) Figure 29. Tripler Load Regulation, Output Voltage vs. Output Current www.onsemi.com 12 NCP1729 −Vout + 6 1 OSC Vin + 2 5 + 100 k 3 4 Capacitors = 3.3 mF Figure 30. Load Regulated Negative Output Voltage A zener diode can be used with the shutdown input to provide closed loop regulation performance. This significantly reduces the converter’s output resistance and dramatically enhances the load regulation. For closed loop operation, the desired regulated output voltage must be lower in magnitude than −Vin. The output will regulate at a level of −VZ + Vth(SHDN). Note that the shutdown input voltage threshold is typically 0.5 Vin and therefore, the regulated output voltage will change proportional to the converter’s input. This characteristic will not present a problem when used in applications with constant input voltage. In this case the zener breakdown was measured at 25 mA. The performance characteristics for the above converter are shown below. Note that the dashed curve sections represent the converter’s open loop performance. −1.0 Vout, OUTPUT VOLTAGE (V) TA = 25°C A −2.0 −3.0 B −4.0 −5.0 0 10 20 30 40 50 60 70 Iout, OUTPUT CURRENT (mA) Figure 31. Load Regulation, Output Voltage vs. Output Current www.onsemi.com 13 Curve Vin (V) Vz (V) Vout (V) A 3.3 3.9 −2.1 B 5.0 6.5 −3.8 NCP1729 −Vout R1 6 1 + OSC Vin + 2 5 3 4 + R2 10 k Capacitors = 3.3 mF Figure 32. Line and Load Regulated Negative Output Voltage An adjustable shunt regulator can be used with the shutdown input to give excellent closed loop regulation performance. The shunt regulator acts as a comparator with a precise input offset voltage which significantly reduces the converter’s output resistance and dramatically enhances the line and load regulation. For closed loop operation, the desired regulated output voltage must be lower in magnitude than −Vin. The output will regulate at a level of −Vref (R2/R1 + 1). The adjustable shunt regulator can be from either the TLV431 or TL431 families. The comparator offset or reference voltage is 1.25 V or 2.5 V respectively. The performance characteristics for the converter are shown below. Note that the dashed curve sections represent the converter’s open loop performance. −0.5 TA = 25°C Vout, OUTPUT VOLTAGE (V) Vout, OUTPUT VOLTAGE (V) −1.0 A −2.0 −3.0 B −4.0 −5.0 0 10 20 30 40 50 60 −1.5 −2.5 −3.5 −4.5 1.0 70 Iout = 25 mA R1 = 10 k R2 = 24 k TA = 25°C 2.0 3.0 4.0 5.0 6.0 Iout, OUTPUT CURRENT (mA) Vin, INPUT VOLTAGE (V) Figure 33. Load Regulation, Output Voltage vs. Output Current Figure 34. Line Regulation, Output Voltage vs. Input Current Curve Vin (V) R1 (W) R2 (W) Vout (V) A 3.0 10 k 5.0 k −1.8 B 5.0 10 k 24 k −4.2 www.onsemi.com 14 NCP1729 −Vout + 6 1 1 OSC Vin + 6 OSC 2 5 2 5 3 4 3 4 + + Capacitors = 3.3 mF Figure 35. Paralleling Devices for Increased Negative Output Current An increase in converter output current capability with a reduction in output resistance can be obtained by paralleling two or more devices. The output current capability is approximately equal to the number of devices paralleled. A single shared output capacitor is sufficient for proper operation but each device does require its own pump capacitor. Note that the output ripple frequency will be complex since the oscillators are not synchronized. The output resistance is approximately equal to the output resistance of one device divided by the total number of devices paralleled. The performance characteristics for a converter consisting of two paralleled devices is shown below. Vout, OUTPUT VOLTAGE (V) −1.0 TA = 25°C −2.0 B −3.0 A −4.0 −5.0 0 10 20 30 40 50 60 70 80 90 100 Iout, OUTPUT CURRENT (mA) Figure 36. Parallel Load Regulation, Output Voltage vs. Output Current www.onsemi.com 15 Curve Vin (V) Rout (W) A 5.0 14 B 3.0 17 NCP1729 Q2 6 1 + −Vout + OSC Vin C1 Q1 2 5 3 4 C3 + C2 C1 = C2 = 470 mF C3 = 220 mF Q1 = PZT751 Q2 = PZT651 −Vout = Vin −VBE(Q1) − VBE(Q2) −2 VF Figure 37. External Switch for Increased Negative Output Current The output current capability of the NCP1729 can be extended beyond 600 mA with the addition of two external switch transistors and two Schottky diodes. The output voltage is approximately equal to −Vin minus the sum of the base emitter drops of both transistors and the forward voltage of both diodes. The performance characteristics for the converter are shown below. Note that the output resistance is reduced to 1.0 W. Vout, OUTPUT VOLTAGE (V) −2.0 −2.2 −2.4 −2.6 −2.8 Vin = 5.0 V Rout = 1.0 W TA = 25°C −3.0 −3.2 0 0.1 0.2 0.3 0.4 0.5 Iout, OUTPUT CURRENT (mA) Figure 38. Current Boosted Load Regulation, Output Voltage vs. Output Current www.onsemi.com 16 0.6 NCP1729 10 k R2 Q2 R1 C1 −Vout 6 1 + OSC Vin + Q1 + 2 5 3 4 C3 C2 C1 = C2 = 470 mF C3 = 220 mF Q1 = PZT751 Q2 = PZT651 Figure 39. Line and Load Regulated Negative Output Voltage with High Current Capability This converter is a combination of Figures 37 and 32. It provides a line and load regulated output of −2.47 V at up to 300 mA with an input voltage of 5.0 V. The output will regulate at a level of −Vref (R2/R1 + 1). The performance characteristics are shown below. Note that the dashed line is the open loop and the solid line is the closed loop configuration for the load regulation. −0.1 −2.2 Vout, OUTPUT VOLTAGE (V) Vout, OUTPUT VOLTAGE (V) −2.0 −2.4 −2.6 −2.8 Vin = 5.0 V Rout = 1.0 W R1 = R2 = 10 kW TA = 25°C −3.0 −3.2 0 0.1 0.2 0.3 0.4 0.5 0.6 Iout = 100 mA R1 = R2 = 10 kW TA = 25°C −0.6 −1.1 −1.6 −2.1 −2.6 2.5 3.0 3.5 4.0 4.5 5.0 Iout, OUTPUT CURRENT (A) Vin, INPUT VOLTAGE (V) Figure 40. Current Boosted Load Regulation, Output Voltage vs. Output Current Figure 41. Current Boosted Line Regulation, Output Voltage vs. Output Current www.onsemi.com 17 5.5 NCP1729 50 Q2 C1 Vout 6 1 + 50 OSC + Q1 Vin + 2 5 3 4 C2 C3 Capacitors = 220 mF Q1 = PZT751 Q2 = PZT651 Figure 42. Positive Output Voltage Doubler with High Current Capability The NCP1729 can be configured to produce a positive output voltage doubler with current capability of 500 mA. This is accomplished with the addition of two external switch transistors and two Schottky diodes. The output voltage is approximately equal to 2.0 Vin minus the sum of the base emitter drops of both transistors and the forward voltage of both diodes. The performance characteristics for the converter is shown below. Note that the output resistance is reduced to 1.8 W. Vout, OUTPUT VOLTAGE (V) 8.8 Vin = 5.0 V Rout = 1.8 W TA = 25°C 8.4 8.0 7.6 7.2 0 0.1 0.2 0.3 0.4 0.5 Iout, OUTPUT CURRENT (mA) Figure 43. Positive Doubler with Current Boosted Load Regulation, Output Voltage vs. Output Current www.onsemi.com 18 NCP1729 R1 50 10 k Q2 6 1 50 OSC Q1 Vin + 2 5 3 4 R2 + C3 Vout + C1 C2 Capacitors = 220 mF Q1 = PZT751 Q2 = PZT651 Figure 44. Line and Load Regulated Positive Output Voltage Doubler with High Current Capability This converter is a combination of Figures 42 and the shunt regulator to close the loop. In this case the anode of the regulator is connected to ground. It provides a line and load regulated output of 7.6 V at up to 300 mA with a input voltage of 5.0 V. The output will regulate at a level of Vref (R2/R1 + 1). The open loop configuration is the dashed line and the closed loop is the solid line. The performance characteristics are shown below. 8.0 Vin = 5.0 V Rout = 1.8 W Open Loop Rout = 0.5 W Closed Loop R1 = 10 k R2 = 51.3 kW TA = 25°C 8.6 8.4 8.2 Vout, OUTPUT VOLTAGE (V) Vout, OUTPUT VOLTAGE (V) 8.8 8.0 7.8 7.6 7.4 7.2 0 0.1 0.2 0.3 0.4 0.5 0.6 7.0 6.0 5.0 4.0 Iout = 100 mA R1 = 10 k R2 = 51.3 kW TA = 25°C 3.0 2.0 1.0 1.0 2.0 3.0 4.0 5.0 Iout, OUTPUT CURRENT (A) Vin, INPUT VOLTAGE (V) Figure 45. Current Boosted Close Loop Load Regulation, Output Voltage vs. Output Current Figure 46. Current Boosted Close Loop Line Regulation, Output Voltage vs. Input Voltage www.onsemi.com 19 6.0 NCP1729 Vin = −5.0 V + + OSC C C + 6 1 C 2 5 3 4 Vout = −2.5 V C + Capacitors = 3.3 mF Figure 47. Negative Input Voltage Splitter A single device can be used to split a negative input voltage. The output voltage is approximately equal to −Vin / 2.0. The performance characteristics are shown below. Note that the converter has an output resistance of 10 W. Vout, OUTPUT VOLTAGE (V) −1.5 −1.7 −1.9 −2.1 −2.3 Rout = 10 W TA = 25°C −2.5 0 10 20 30 40 50 60 70 Iout, OUTPUT CURRENT (mA) Figure 48. Negative Voltage Splitter Load Regulation, Output Voltage vs. Output Current www.onsemi.com 20 80 NCP1729 −Vout R1 R2 6 1 + OSC Vin 2 + 5 10 k 3 4 + + + +Vout Capacitors = 10 mF Figure 49. Combination of a Closed Loop Negative Inverter with a Positive Output Voltage Doubler All of the previously shown converter circuits have only single outputs. Applications requiring multiple outputs can be constructed by incorporating combinations of the former circuits. The converter shown above combines Figures 26 and 32 to form a regulated negative output inverter with a non−regulated positive output doubler. The magnitude of −Vout is controlled by the resistor values and follows the relationship −Vref (R2/R1 + 1). Since the positive output is not within the feedback loop, its output voltage will increase as the negative output load increases. This cross regulation characteristic is shown in the upper portion of Figure 50. The dashed line is the open loop and the solid line is the closed loop configuration for the load regulation. The load regulation for the positive doubler with a constant load on the −Vout is shown in Figure 51. 10.0 Vout, OUTPUT VOLTAGE (V) Vout, OUTPUT VOLTAGE (V) 9.0 Positive Doubler Iout = 15 mA 8.0 −3.0 Negative Inverter −4.0 Rout = 45 W − Open Loop Rout = 2 W − Closed Loop R1 = 10 k, R2 = 20 k TA = 25°C −5.0 9.0 8.0 Negative Inverter Iout = 15 mA R1 = 10 kW R2 = 20 kW TA = 25°C 7.0 0 10 20 30 Iout, NEGATIVE INVERTER OUTPUT CURRENT (mA) 0 10 20 30 40 50 Iout, POSITIVE DOUBLER OUTPUT CURRENT (mA) Figure 50. Load Regulation, Output Voltage vs. Output Current + Figure 51. Load Regulation, Output Voltage vs. Output Current IC1 C1 C2 Vin −Vout SHDN GND C3 + + GND 0.5″ Inverter Size = 0.5 in x 0.2 in Area = 0.10 in2, 64.5 mm2 Figure 52. Inverter Circuit Board Layout, Top View Copper Side www.onsemi.com 21 NCP1729 ORDERING INFORMATION Marking Package Shipping† NCP1729SN35T1G EAD NCV1729SN35T1G* NCV TSOP−6 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NCV: Tlow = −40°C, Thigh = +85°C. Guaranteed by design. NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. www.onsemi.com 22 NCP1729 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE V D H ÉÉÉ ÉÉÉ 6 E1 1 NOTE 5 5 2 4 L2 GAUGE PLANE E 3 L M b SEATING PLANE DIM A A1 b c D E E1 e L L2 M DETAIL Z e 0.05 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D AND E1 ARE DETERMINED AT DATUM H. 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE. A c A1 DETAIL Z MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 2.75 3.00 1.50 1.70 0.95 1.05 0.40 0.60 0.25 BSC − 0° 10° MIN 0.90 0.01 0.25 0.10 2.90 2.50 1.30 0.85 0.20 RECOMMENDED SOLDERING FOOTPRINT* 6X 0.60 6X 3.20 0.95 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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