Ordering number : ENA1092A 2SC5536A RF Transistor 12V, 50mA, fT=1.7GHz, NPN Single SSFP http://onsemi.com Features • • • • Low-noise : NF=1.8dB typ (f=150MHz) 2 High gain : ⏐S21e⏐ =16dB typ (f=150MHz) Ultrasmall, slim flat-lead package (1.4mm×0.8mm×0.6mm) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Conditions Ratings Unit VCBO VCEO 20 V 12 V VEBO IC 2 V 50 mA 100 mW Junction Temperature PC Tj Storage Temperature Tstg 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7029A-002 • Package : SSFP • JEITA, JEDEC : SC-81 • Minimum Packing Quantity : 8,000 pcs./reel 2SC5536A-TL-H 1.4 Packing Type: TL 0.1 3 Marking 0.8 0 to 0.02 2 0.45 0.2 TL Electrical Connection 0.6 0.07 0.07 MA LOT No. 1 LOT No. 0.3 1.4 0.3 0.25 1 2 3 1 : Base 2 : Emitter 3 : Collector 3 1 SSFP 2 Semiconductor Components Industries, LLC, 2013 August, 2013 71112 TKIM/42110AB TKIM TC-00002325 No. A1092-1/7 2SC5536A Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain min typ ICBO IEBO VCB=10V, IE=0A VEB=1V, IC=0A hFE1 VCE=2V, IC=3mA VCE=2V, IC=50mA 80 VCE=2V, IC=3mA 1.0 hFE2 Gain-Bandwidth Product Ratings Conditions Output Capacitance fT Cob Reverse Transfer Capacitance Cre Forward Transfer Gain ⏐S21e⏐ Noise Figure NF Unit max 1.0 μA 10 μA 200 70 1.7 GHz 1.1 VCB=10V, f=1MHz 1.8 pF 0.8 2 13 VCE=2V, IC=3mA, f=150MHz pF 16 dB 1.8 3.0 dB Ordering Information Device Package Shipping memo SSFP 8,000pcs./reel Pb Free and Halogem Free 2SC5536A-TL-H IC -- VCE 60 IC -- VCE 20 140μA 18 Collector Current, IC -- mA 320μA 40 Collector Current, IC -- mA 400μA 360μA 50 280μA 240μA 200μA 30 160μA 20 120μA 80μA 10 40μA IB=0μA 0 0.5 0 1.0 1.5 2.0 2.5 Collector-to-Emitter Voltage, VCE -- V 100μA 14 80μA 12 60μA 10 8 40μA 6 20μA 4 2 IB=0μA 0 3.0 2 0 4 6 8 10 Collector-to-Emitter Voltage, VCE -- V IT14226 hFE -- IC 1000 120μA 16 IT14227 fT -- IC 2 Gain-Bandwidth Product, fT -- GHz 7 DC Current Gain, hFE 5 3 2 VCE=2V 1V 100 7 5 3 2 10 0.1 10 7 =2V V CE 1V 5 3 2 1.0 7 5 3 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC -- mA 2 3 5 7 100 IT14228 7 1.0 2 3 5 7 10 2 Collector Current, IC -- mA 3 5 7 IT01306 No. A1092-2/7 2SC5536A Cob -- VCB 5 Reverse Transfer Capacitance, Cre -- pF Output Capacitance, Cob -- pF 3 2 1.0 7 5 3 2 7 0.1 2 3 5 7 1.0 2 3 5 7 2 10 Collector-to-Base Voltage, VCB -- V 3 2 1.0 7 5 3 2 7 0.1 3 Forward Transfer Gain, ⏐S21e⏐2 -- dB 10 8 6 4 VC =2 E V 2 1V 0 3 5 7 1.0 2 3 5 7 2 10 3 IT01308 C 32 f=150MHz 2 Collector-to-Base Voltage, VCB -- V ⏐S21e⏐2 -- I IT01307 NF -- IC 12 Noise Figure, NF -- dB f=1MHz 0.1 0.1 f=150MHz 28 24 20 V =2 E C V 16 1V 12 8 4 0 7 2 1.0 3 5 7 2 10 3 Collector Current, IC -- mA 5 7 100 IT01310 PC -- Ta 120 Collector Dissipation, PC -- mW Cre -- VCB 5 f=1MHz 3 5 7 1.0 2 3 5 7 10 2 Collector Current, IC -- mA 3 5 7 100 IT01309 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT01311 No. A1092-3/7 2SC5536A S Parameters (Common emitter) VCE=2V, IC=1mA, ZO=50Ω Freq(MHz) 50 100 150 200 250 300 350 400 450 500 ⏐S11⏐ 0.961 0.937 0.917 0.890 0.893 0.880 0.868 0.873 0.858 0.866 ∠S11 -26.3 -52.0 -72.8 -89.5 -100.7 -111.3 -122.4 -127.6 -135.4 -138.9 ⏐S21⏐ 3.67 2.90 2.69 2.47 2.23 1.93 1.83 1.58 1.52 1.31 ∠S21 162.9 148.5 135.6 125.0 116.6 108.8 102.9 96.8 92.7 87.3 ⏐S12⏐ 0.040 0.074 0.099 0.114 0.124 0.130 0.135 0.136 0.137 0.135 ∠S12 74.8 61.5 50.4 41.3 33.8 28.3 23.9 19.9 16.8 14.0 ⏐S22⏐ 0.980 0.938 0.890 0.843 0.803 0.785 0.747 0.747 0.720 0.724 ∠S22 -7.3 -13.4 -18.0 -21.5 -24.4 -26.5 -28.6 -30.5 -32.3 -34.3 ∠S11 -37.5 -68.6 -91.8 -108.7 -121.4 -130.6 -137.9 -143.8 -148.4 -152.5 ⏐S21⏐ 9.15 8.01 6.76 5.56 4.93 4.17 3.73 3.28 2.99 2.69 ∠S21 157.9 140.2 127.0 117.8 110.1 104.6 98.9 95.2 91.0 88.1 ⏐S12⏐ 0.038 0.064 0.080 0.088 0.095 0.098 0.098 0.100 0.098 0.100 ∠S12 69.9 54.0 43.3 35.6 30.8 27.4 24.8 23.0 22.2 21.3 ⏐S22⏐ 0.942 0.829 0.723 0.636 0.581 0.533 0.510 0.482 0.472 0.457 ∠S22 -15.0 -26.1 -32.9 -36.7 -39.1 -40.9 -42.2 -43.3 -44.6 -45.7 ∠S11 -64.8 -105.2 -126.7 -139.6 -147.8 -153.8 -158.8 -162.1 -165.3 -167.6 ⏐S21⏐ 22.70 16.71 12.55 9.94 8.10 6.88 5.96 5.25 4.70 4.24 ∠S21 145.6 125.0 113.3 106.2 101.0 96.9 93.4 90.7 88.2 85.9 ⏐S12⏐ 0.031 0.046 0.052 0.055 0.059 0.060 0.062 0.065 0.067 0.069 ∠S12 60.7 44.9 38.2 36.3 35.6 36.2 37.4 38.6 40.6 42.1 ⏐S22⏐ 0.825 0.605 0.462 0.371 0.314 0.276 0.248 0.228 0.215 0.204 ∠S22 -33.9 -53.9 -64.8 -71.4 -76.1 -79.7 -82.6 -85.1 -86.7 -88.6 ∠S11 -104.0 -137.6 -151.7 -159.5 -164.5 -168.1 -170.8 -173.0 -174.8 -176.5 ⏐S21⏐ 36.87 23.04 16.23 12.43 10.04 8.44 7.27 6.38 5.70 5.14 ∠S21 131.9 112.9 104.1 99.4 95.6 92.8 90.2 88.3 86.4 84.7 ⏐S12⏐ 0.022 0.030 0.034 0.038 0.042 0.045 0.050 0.055 0.059 0.064 ∠S12 54.3 44.3 45.3 47.4 50.8 53.9 56.5 58.3 60.5 61.5 ⏐S22⏐ 0.672 0.450 0.352 0.302 0.276 0.260 0.251 0.244 0.239 0.237 ∠S22 -59.9 -89.4 -106.7 -118.6 -127.0 -133.7 -138.8 -142.9 -145.6 -148.2 VCE=2V, IC=3mA, ZO=50Ω Freq(MHz) 50 100 150 200 250 300 350 400 450 500 ⏐S11⏐ 0.888 0.860 0.835 0.810 0.800 0.792 0.791 0.787 0.785 0.783 VCE=2V, IC=10mA, ZO=50Ω Freq(MHz) 50 100 150 200 250 300 350 400 450 500 ⏐S11⏐ 0.733 0.722 0.719 0.713 0.716 0.716 0.716 0.717 0.715 0.716 VCE=2V, IC=30mA, ZO=50Ω Freq(MHz) 50 100 150 200 250 300 350 400 450 500 ⏐S11⏐ 0.605 0.660 0.677 0.681 0.686 0.687 0.689 0.691 0.691 0.691 No. A1092-4/7 2SC5536A Embossed Taping Specification 2SC5536A-TL-H No. A1092-5/7 2SC5536A Outline Drawing 2SC5536A-TL-H Land Pattern Example Mass (g) Unit 0.0018 mm * For reference Unit: mm 1.2 0.5 0.5 0.45 0.45 0.45 0.45 No. A1092-6/7 2SC5536A ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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