MMBT2907A-G

General Purpose Transistor
MMBT2907A-G (PNP)
RoHS Device
Features
SOT-23
-Epitaxial planar die construction
-Device is designed as a general purpose
0.118(3.00)
0.110(2.80)
amplifier and switching.
3
-Useful dynamic range exceeds to 600mA
0.055(1.40)
0.047(1.20)
As a switch and to 100MHz as an amplifier.
1
2
0.079(2.00)
0.071(1.80)
0.006(0.15)
0.003(0.08)
0.041(1.05)
0.035(0.90)
Collector
3
0.100(2.55)
0.089(2.25)
0.004(0.10) max
1
Base
0.020(0.50)
0.012(0.30)
0.020(0.50)
0.012(0.30)
2
Emitter
Dimensions in inches and (millimeter)
Maximum Ratings (at Ta=25°C unless otherwise noted)
Symbol
Value
Units
Collector-Base voltage
VCBO
-60
V
Collector-Emitter voltage
VCEO
-60
V
Emitter-Base voltage
VEBO
-5
V
Collector current-continuous
IC
-600
mA
Total device dissipation
PD
250
mW
RθJA
500
°C/W
TJ
150
°C
TSTG
-55 to +150
°C
Parameter
Thermal resistance, junction to ambient
Junction temperature
Storage temperature range
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
QW-BTR03
Page 1
General Purpose Transistor
Electrical Characteristics (@TA=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Max.
Units
Collector-Base breakdown voltage
V(BR)CBO
IC=-10μA, IE=0
-60
V
Collector-Emitter breakdown voltage
(Note 1)
V(BR)CEO
IC=-10mA, IB=0
-60
V
Emitter-Base breakdown voltage
V(BR)EBO
IE=-10μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V, IE=0
-20
nA
Base cut-off current
IEBO
VEB=-3V, IC=0
-10
nA
Collector cut-off current
ICEX
VCE=-30V, VBE(off)=-0.5V
-50
nA
hFE(1)
VCE=-10V, IC=-150mA
100
hFE(2)
VCE=-10V, IC=-0.1mA
75
hFE(3)
VCE=-10V, IC=-1mA
100
hFE(4)
VCE=-10V, IC=-10mA
100
hFE(5)
VCE=-10V, IC=-500mA
50
VCE(sat)
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
-0.4
-1.6
V
VBE(sat)
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
-1.3
-2.6
V
DC current gain
Collector-Emitter saturation voltage
(Note 1)
Base-Emitter saturation voltage
(Note 1)
Transition frequency
fT
Delay time
td
Rise time
tr
Storage time
tS
Fall time
tf
VCE=-20V, IC=-50mA
f=100MHz
VCE=-30V
IC=-150mA, IB1=-15mA
VCE=-6V, IC=-150mA
IB1=-IB2=-15mA
300
200
MHz
10
nS
25
nS
225
nS
60
nS
Notes:
1. Pulse test: Pulse Width ≤300μs, Duty Cycle ≤ 2.0%.
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
QW-BTR03
Page 2
General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (MMBT2907A-G)
Fig.2 - hFE — IC
Fig.1 - Static Characteristic
-0.25
500
COMMON EMITTER
VCE=-10V
-800μA
-0.20
400
-720μA
DC Current Gain, hFE
Collector Current, IC (mA)
COMMON
EMITTER
Ta=25°C
-640μA
-0.15
-560μA
-480μA
-0.10
-400μA
-320μA
-240μA
-0.05
300
Ta=100°C
200
Ta=25°C
100
-160μA
IB=-80μA
-0.00
-0
-2
-4
-6
-8
-10
0
-0.1
-12
-100
-10
Collector-Emitter Voltage, VCE (V)
Collector Current, Ic (mA)
Fig.3 - VCEsat — IC
Fig.4 - VBEsat — IC
-600
-1.2
-0.9
β = 10
Base - Emitter Saturation
Voltage, VBEsat (V)
β = 10
Collector -Emitter Saturation
Voltage, VCEsat (V)
-1
-0.6
Ta=100°C
-0.3
Ta= 25°C
-0.8
Ta=100°C
-0.4
Ta= 25°C
-0.0
-0.0
-1
-10
-100
Collector Current, Ic (mA)
-600
-1
-10
-100
-600
Collector Current, Ic (mA)
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
QW-BTR03
Page 3
General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (MMBT2907A-G)
Fig.5 - IC — VBE
Fig.6 - Cob/Cib — VCB/VEB
-600
100
f=1MHZ
IE=0/IC=0
Ta=25°C
-100
Capacitance, C (pF)
Collector Current, Ic (mA)
COMMON EMITTER
VCE=-10V
Ta=100°C
-10
Ta= 25°C
-1
-0.1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
Base - Emmiter Voltage, VBE (V)
Cib
10
Cob
0
-0.1
-1
-10
-20
Reverse Voltge, V (V)
Fig.7 - PC — Ta
Collector Power Dissipation, Pc (mW)
300
250
200
150
100
50
0
0
25
50
75
100
125
150
Ambient Temperature, Ta (°C)
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
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Page 4
General Purpose Transistor
Reel Taping Specification
P1
d
T
F
E
P0
B
W
C
A
P
12
o
0
D2
D1
D
W1
SOT-23
SOT-23
SYMBOL
A
B
C
d
D
D1
D2
(mm)
3.15 ± 0.10
2.77 ± 0.10
1.22 ± 0.10
Φ1.50 ± 0.10
178 ± 2.00
54.40 ± 1.00
13.00 ± 1.00
(inch)
0.124 ± 0.004
0.109 ± 0.004
0.048 ± 0.004 Φ0.059 ± 0.004 7.008 ± 0.079
2.142 ± 0.039
0.512 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30 /–0.10
12.30 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004 0.315 + 0.012 /–0.004 0.484 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
QW-BTR03
Page 5
General Purpose Transistor
Marking Code
3
Part Number
Marking Code
MMBT2907A-G
2F
XX
1
2
xx = Product type marking code
Suggested PAD Layout
SOT-23
SIZE
(mm)
(inch)
A
0.80
0.031
B
1.90
0.075
C
2.02
0.080
D
2.82
0.111
A
C
D
B
Standard Packaging
REEL PACK
Case Type
SOT-23
REEL
Reel Size
( pcs )
(inch)
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
QW-BTR03
Page 6