General Purpose Transistor MMBT2907A-G (PNP) RoHS Device Features SOT-23 -Epitaxial planar die construction -Device is designed as a general purpose 0.118(3.00) 0.110(2.80) amplifier and switching. 3 -Useful dynamic range exceeds to 600mA 0.055(1.40) 0.047(1.20) As a switch and to 100MHz as an amplifier. 1 2 0.079(2.00) 0.071(1.80) 0.006(0.15) 0.003(0.08) 0.041(1.05) 0.035(0.90) Collector 3 0.100(2.55) 0.089(2.25) 0.004(0.10) max 1 Base 0.020(0.50) 0.012(0.30) 0.020(0.50) 0.012(0.30) 2 Emitter Dimensions in inches and (millimeter) Maximum Ratings (at Ta=25°C unless otherwise noted) Symbol Value Units Collector-Base voltage VCBO -60 V Collector-Emitter voltage VCEO -60 V Emitter-Base voltage VEBO -5 V Collector current-continuous IC -600 mA Total device dissipation PD 250 mW RθJA 500 °C/W TJ 150 °C TSTG -55 to +150 °C Parameter Thermal resistance, junction to ambient Junction temperature Storage temperature range Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR03 Page 1 General Purpose Transistor Electrical Characteristics (@TA=25°C unless otherwise noted) Parameter Symbol Conditions Min. Max. Units Collector-Base breakdown voltage V(BR)CBO IC=-10μA, IE=0 -60 V Collector-Emitter breakdown voltage (Note 1) V(BR)CEO IC=-10mA, IB=0 -60 V Emitter-Base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -20 nA Base cut-off current IEBO VEB=-3V, IC=0 -10 nA Collector cut-off current ICEX VCE=-30V, VBE(off)=-0.5V -50 nA hFE(1) VCE=-10V, IC=-150mA 100 hFE(2) VCE=-10V, IC=-0.1mA 75 hFE(3) VCE=-10V, IC=-1mA 100 hFE(4) VCE=-10V, IC=-10mA 100 hFE(5) VCE=-10V, IC=-500mA 50 VCE(sat) IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA -0.4 -1.6 V VBE(sat) IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA -1.3 -2.6 V DC current gain Collector-Emitter saturation voltage (Note 1) Base-Emitter saturation voltage (Note 1) Transition frequency fT Delay time td Rise time tr Storage time tS Fall time tf VCE=-20V, IC=-50mA f=100MHz VCE=-30V IC=-150mA, IB1=-15mA VCE=-6V, IC=-150mA IB1=-IB2=-15mA 300 200 MHz 10 nS 25 nS 225 nS 60 nS Notes: 1. Pulse test: Pulse Width ≤300μs, Duty Cycle ≤ 2.0%. Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR03 Page 2 General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMBT2907A-G) Fig.2 - hFE — IC Fig.1 - Static Characteristic -0.25 500 COMMON EMITTER VCE=-10V -800μA -0.20 400 -720μA DC Current Gain, hFE Collector Current, IC (mA) COMMON EMITTER Ta=25°C -640μA -0.15 -560μA -480μA -0.10 -400μA -320μA -240μA -0.05 300 Ta=100°C 200 Ta=25°C 100 -160μA IB=-80μA -0.00 -0 -2 -4 -6 -8 -10 0 -0.1 -12 -100 -10 Collector-Emitter Voltage, VCE (V) Collector Current, Ic (mA) Fig.3 - VCEsat — IC Fig.4 - VBEsat — IC -600 -1.2 -0.9 β = 10 Base - Emitter Saturation Voltage, VBEsat (V) β = 10 Collector -Emitter Saturation Voltage, VCEsat (V) -1 -0.6 Ta=100°C -0.3 Ta= 25°C -0.8 Ta=100°C -0.4 Ta= 25°C -0.0 -0.0 -1 -10 -100 Collector Current, Ic (mA) -600 -1 -10 -100 -600 Collector Current, Ic (mA) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR03 Page 3 General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMBT2907A-G) Fig.5 - IC — VBE Fig.6 - Cob/Cib — VCB/VEB -600 100 f=1MHZ IE=0/IC=0 Ta=25°C -100 Capacitance, C (pF) Collector Current, Ic (mA) COMMON EMITTER VCE=-10V Ta=100°C -10 Ta= 25°C -1 -0.1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 Base - Emmiter Voltage, VBE (V) Cib 10 Cob 0 -0.1 -1 -10 -20 Reverse Voltge, V (V) Fig.7 - PC — Ta Collector Power Dissipation, Pc (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 Ambient Temperature, Ta (°C) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR03 Page 4 General Purpose Transistor Reel Taping Specification P1 d T F E P0 B W C A P 12 o 0 D2 D1 D W1 SOT-23 SOT-23 SYMBOL A B C d D D1 D2 (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 Φ1.50 ± 0.10 178 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 Φ0.059 ± 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 /–0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012 /–0.004 0.484 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR03 Page 5 General Purpose Transistor Marking Code 3 Part Number Marking Code MMBT2907A-G 2F XX 1 2 xx = Product type marking code Suggested PAD Layout SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 1.90 0.075 C 2.02 0.080 D 2.82 0.111 A C D B Standard Packaging REEL PACK Case Type SOT-23 REEL Reel Size ( pcs ) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR03 Page 6