2SC5536A Ordering number : ENA1092 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5536A VHF Low-Noise Amplifier, OSC Applications Features • • • • Low-noise : NF=1.8dB typ (f=150MHz). High gain : ⏐S21e⏐2=16dB typ (f=150MHz). Ultrasmall, slim flat-lead package (1.4mm✕0.8mm✕0.6mm). Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Symbol Conditions Ratings Unit VCBO VCEO 20 V 12 V VEBO IC 2 V 50 mA Junction Temperature PC Tj Storage Temperature Tstg 100 mW 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Symbol Conditions Ratings min typ max Unit ICBO IEBO VCB=10V, IE=0A 1.0 μA VEB=1V, IC=0A 10 μA hFE1 hFE2 VCE=2V, IC=3mA VCE=2V, IC=50mA 70 fT Cob VCE=2V, IC=3mA 1.0 Output Capacitance VCB=10V, f=1MHz 1.1 Reverse Transfer Capacitance Cre VCB=10V, f=1MHz 0.8 Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Marking : MA 80 200 1.7 GHz 1.8 pF pF Continued on next page. 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To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. http://semicon.sanyo.com/en/network 42110AB TK IM TC-00002325 No. A1092-1/5 2SC5536A Continued from preceding page. Parameter Symbol 2 Forward Transfer Gain ⏐S21e⏐ NF Noise Figure Ratings Conditions min VCE=2V, IC=3mA, f=150MHz VCE=2V, IC=3mA, f=150MHz Package Dimensions 13 Unit max 16 dB 1.8 3.0 dB Marking unit : mm (typ) 7029-002 3 1 : Base 2 : Emitter 3 : Collector MA Top View 1.4 0.3 typ 2 1 0.25 Top view 1.4 0.8 3 2 1 0.1 0.3 0.2 1 : Base 2 : Emitter 3 : Collector 0.07 2 1 0.07 0.6 0.45 3 SANYO : SSFP Bottom View IC -- VCE 60 IC -- VCE 20 140μA Collector Current, IC -- mA 40 Collector Current, IC -- mA 18 400μA 360μA 320μA 50 280μA 240μA 200μA 30 160μA 20 120μA 80μA 10 40μA IB=0μA 0 0.5 0 1.0 1.5 2.0 2.5 Collector-to-Emitter Voltage, VCE -- V 100μA 14 80μA 12 60μA 10 8 40μA 6 20μA 4 2 IB=0μA 0 3.0 2 0 4 6 8 Collector-to-Emitter Voltage, VCE -- V IT14226 hFE -- IC 1000 120μA 16 10 IT14227 fT -- IC 2 Gain-Bandwidth Product, fT -- GHz 7 DC Current Gain, hFE 5 3 2 VCE=2V 1V 100 7 5 3 2 10 0.1 10 7 =2V V CE 1V 5 3 2 1.0 7 5 3 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC -- mA 2 3 5 7 100 IT14228 7 1.0 2 3 5 7 10 2 Collector Current, IC -- mA 3 5 7 IT01306 No. A1092-2/5 2SC5536A Cob -- VCB 5 Reverse Transfer Capacitance, Cre -- pF Output Capacitance, Cob -- pF 3 2 1.0 7 5 3 2 7 0.1 2 3 5 7 1.0 2 3 5 7 2 10 Collector-to-Base Voltage, VCB -- V 2 1.0 7 5 3 2 7 0.1 3 Forward Transfer Gain, ⏐S21e⏐2 -- dB 10 8 6 4 VC =2 E V 2 1V 0 3 5 7 1.0 2 3 5 7 2 10 3 IT01308 C 32 f=150MHz 2 Collector-to-Base Voltage, VCB -- V ⏐S21e⏐2 -- I IT01307 NF -- IC 12 Noise Figure, NF -- dB f=1MHz 3 0.1 0.1 f=150MHz 28 24 20 V V 16 =2 CE 1V 12 8 4 0 7 2 1.0 3 5 7 2 10 3 Collector Current, IC -- mA 5 7 100 IT01310 PC -- Ta 120 Collector Dissipation, PC -- mW Cre -- VCB 5 f=1MHz 3 5 7 1.0 2 3 5 7 10 2 Collector Current, IC -- mA 3 5 7 100 IT01309 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT01311 No. A1092-3/5 2SC5536A S Parameters (Common emitter) VCE=2V, IC=1mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ 50 0.961 --26.3 3.67 162.9 0.040 74.8 0.980 ∠S22 --7.3 100 0.937 --52.0 2.90 148.5 0.074 61.5 0.938 --13.4 150 0.917 --72.8 2.69 135.6 0.099 50.4 0.890 --18.0 200 0.890 --89.5 2.47 125.0 0.114 41.3 0.843 --21.5 250 0.893 --100.7 2.23 116.6 0.124 33.8 0.803 --24.4 300 0.880 --111.3 1.93 108.8 0.130 28.3 0.785 --26.5 350 0.868 --122.4 1.83 102.9 0.135 23.9 0.747 --28.6 400 0.873 --127.6 1.58 96.8 0.136 19.9 0.747 --30.5 450 0.858 --135.4 1.52 92.7 0.137 16.8 0.720 --32.3 500 0.866 --138.9 1.31 87.3 0.135 14.0 0.724 --34.3 ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 VCE=2V, IC=3mA, ZO=50Ω Freq(MHz) ⏐S11⏐ 50 0.888 --37.5 9.15 157.9 0.038 69.9 0.942 --15.0 100 0.860 --68.6 8.01 140.2 0.064 54.0 0.829 --26.1 150 0.835 --91.8 6.76 127.0 0.080 43.3 0.723 --32.9 200 0.810 --108.7 5.56 117.8 0.088 35.6 0.636 --36.7 250 0.800 --121.4 4.93 110.1 0.095 30.8 0.581 --39.1 300 0.792 --130.6 4.17 104.6 0.098 27.4 0.533 --40.9 350 0.791 --137.9 3.73 98.9 0.098 24.8 0.510 --42.2 400 0.787 --143.8 3.28 95.2 0.100 23.0 0.482 --43.3 450 0.785 --148.4 2.99 91.0 0.098 22.2 0.472 --44.6 500 0.783 --152.5 2.69 88.1 0.100 21.3 0.457 --45.7 VCE=2V, IC=10mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 50 0.733 --64.8 22.70 145.6 0.031 60.7 0.825 --33.9 100 0.722 --105.2 16.71 125.0 0.046 44.9 0.605 --53.9 150 0.719 --126.7 12.55 113.3 0.052 38.2 0.462 --64.8 200 0.713 --139.6 9.94 106.2 0.055 36.3 0.371 --71.4 250 0.716 --147.8 8.10 101.0 0.059 35.6 0.314 --76.1 300 0.716 --153.8 6.88 96.9 0.060 36.2 0.276 --79.7 350 0.716 --158.8 5.96 93.4 0.062 37.4 0.248 --82.6 400 0.717 --162.1 5.25 90.7 0.065 38.6 0.228 --85.1 450 0.715 --165.3 4.70 88.2 0.067 40.6 0.215 --86.7 500 0.716 --167.6 4.24 85.9 0.069 42.1 0.204 --88.6 ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 --59.9 VCE=2V, IC=30mA, ZO=50Ω Freq(MHz) ⏐S11⏐ 50 0.605 --104.0 36.87 131.9 0.022 54.3 0.672 100 0.660 --137.6 23.04 112.9 0.030 44.3 0.450 --89.4 150 0.677 --151.7 16.23 104.1 0.034 45.3 0.352 --106.7 200 0.681 --159.5 12.43 99.4 0.038 47.4 0.302 --118.6 250 0.686 --164.5 10.04 95.6 0.042 50.8 0.276 --127.0 300 0.687 --168.1 8.44 92.8 0.045 53.9 0.260 --133.7 350 0.689 --170.8 7.27 90.2 0.050 56.5 0.251 --138.8 400 0.691 --173.0 6.38 88.3 0.055 58.3 0.244 --142.9 450 0.691 --174.8 5.70 86.4 0.059 60.5 0.239 --145.6 500 0.691 --176.5 5.14 84.7 0.064 61.5 0.237 --148.2 No. A1092-4/5 2SC5536A SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2010. Specifications and information herein are subject to change without notice. PS No. A1092-5/5