NJW0281G (NPN) NJW0302G (PNP) Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages and other linear applications. Features • • • • • • Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 3 A Excellent Gain Linearity High BVCEO High Frequency These Devices are Pb−Free and are RoHS Compliant 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 150 WATTS NPN PNP COLLECTOR 2, 4 Benefits • • • • • http://onsemi.com Reliable Performance at Higher Powers Symmetrical Characteristics in Complementary Configurations Accurate Reproduction of Input Signal Greater Dynamic Range High Amplifier Bandwidth COLLECTOR 2, 4 1 BASE 1 BASE EMITTER 3 EMITTER 3 MARKING DIAGRAM 4 Applications • High−End Consumer Audio Products Home Amplifiers Home Receivers Professional Audio Amplifiers ♦ Theater and Stadium Sound Systems ♦ Public Address Systems (PAs) ♦ • NJWxxxG AYWW ♦ TO−3P CASE 340AB STYLES 1,2,3 MAXIMUM RATINGS Rating Collector−Emitter Voltage Symbol Value Unit VCEO 250 Vdc Collector−Base Voltage VCBO 250 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector−Emitter Voltage − 1.5 V VCEX 250 Vdc IC 15 Adc ICM 30 Adc Base Current − Continuous IB 1.5 Adc Total Power Dissipation @ TC = 25°C PD 150 Watts TJ, Tstg − 65 to +150 °C Collector Current − Continuous Collector Current − Peak (Note 1) Operating and Storage Junction Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 1 1 1 2 3 xxxx G A Y WW 1 2 3 = 0281 or 0302 = Pb−Free Package = Assembly Location = Year = Work Week ORDERING INFORMATION Device Package Shipping NJW0281G TO−3P (Pb−Free) 30 Units/Rail NJW0302G TO−3P (Pb−Free) 30 Units/Rail Publication Order Number: NJW0281/D NJW0281G (NPN) NJW0302G (PNP) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol Value Unit RθJC 0.83 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Max Unit VCEO(sus) 250 − V Collector Cutoff Current (VCB = 250 V, IE = 0) ICBO − 10 mA Emitter Cutoff Current (VEB = 5.0 V, IC = 0) IEBO − 5.0 mA 75 75 75 150 150 150 Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mA, IB = 0) ON CHARACTERISTICS hFE DC Current Gain (IC = 0.5 A, VCE = 5.0 V) (IC = 1.0 A, VCE = 5.0 V) (IC = 3.0 A, VCE = 5.0 V) − Collector−Emitter Saturation Voltage (IC = 5.0 A, IB = 0.5 A) VCE(sat) − 1.0 V Base−Emitter On Voltage (IC = 5.0 A, VCE = 5.0 V) VBE(on) − 1.2 V fT 30 − MHz Cob − 400 pF DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 1.0 A, VCE = 5.0 V, ftest = 1.0 MHz) Output Capacitance (VCB = 10 V, IE = 0, ftest = 1.0 MHz) 100 140 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (W) 160 120 100 80 60 40 20 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 1.0 ms 10 10 ms 100 ms 1 DC 0.1 0.01 160 5.0 ms 1 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Power Derating Figure 2. Safe Operating Area http://onsemi.com 2 1000 NJW0281G (NPN) NJW0302G (PNP) 500 hFE, DC CURRENT GAIN VCE = 5.0 V 100°C 100 −25°C 25°C 10 0.05 0.1 10 25°C 1 10 Figure 4. NJW0302G DC Current Gain −25°C 25°C 100°C 0.4 0.2 0 0.01 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) −25°C Figure 3. NJW0281G DC Current Gain 0.8 10 100 IC, COLLECTOR CURRENT (A) 1 0.6 100°C IC, COLLECTOR CURRENT (A) VCE = 5.0 V 1.2 VCE = 5.0 V 10 0.05 0.1 50 VBE(on), BASE−EMITTER VOLTAGE (V) VBE(on), BASE−EMITTER VOLTAGE (V) 1.4 1 0.1 1 10 100 50 2.4 VCE = 5.0 V 1.9 1.4 0.9 −25°C 100°C 0.4 25°C −0.1 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. NJW0281G Base−Emitter Voltage Figure 6. NJW0302G Base−Emitter Voltage 100 10 IC/IB= 10 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 500 1 25°C 100°C 0.1 0.01 0.01 −25°C 0.1 1 10 100 IC/IB= 10 1 100°C 0.1 0.01 0.01 25°C −25°C IC, COLLECTOR CURRENT (A) 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 7. NJW0281G Saturation Voltage Figure 8. NJW0302G Saturation Voltage http://onsemi.com 3 100 NJW0281G (NPN) NJW0302G (PNP) 70 50 VCE= 5.0 V fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz) fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 60 40 30 20 25°C 10 0 0.01 0.1 1 10 60 VCE= 5.0 V 50 40 30 20 25°C 10 0 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 9. NJW0281G Current Gain Bandwidth Product Figure 10. NJW0302G Current Gain Bandwidth Product http://onsemi.com 4 NJW0281G (NPN) NJW0302G (PNP) PACKAGE DIMENSIONS TO−3P−3LD CASE 340AB−01 ISSUE A B A B C Q 4 SEATING PLANE U E A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM THE TERMINAL TIP. 4. DIMENSION A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. L DIM A B C D E F G H J K L P Q U W (3°) P K 1 2 3 3X D 0.25 G M A B S H J F W G STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR MILLIMETERS MIN NOM MAX 19.70 19.90 20.10 15.40 15.60 15.80 4.60 4.80 5.00 0.80 1.00 1.20 1.45 1.50 1.65 1.80 2.00 2.20 5.45 BSC 1.20 1.40 1.60 0.55 0.60 0.75 19.80 20.00 20.20 18.50 18.70 18.90 3.30 3.50 3.70 3.10 3.20 3.50 5.00 REF 2.80 3.00 3.20 STYLE 2: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 3: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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