NJW0281 D

NJW0281G (NPN)
NJW0302G (PNP)
Complementary NPN-PNP
Power Bipolar Transistors
These complementary devices are lower power versions of the
popular NJW3281G and NJW1302G audio output transistors. With
superior gain linearity and safe operating area performance, these
transistors are ideal for high fidelity audio amplifier output stages and
other linear applications.
Features
•
•
•
•
•
•
Exceptional Safe Operating Area
NPN/PNP Gain Matching within 10% from 50 mA to 3 A
Excellent Gain Linearity
High BVCEO
High Frequency
These Devices are Pb−Free and are RoHS Compliant
15 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
250 VOLTS, 150 WATTS
NPN
PNP
COLLECTOR 2, 4
Benefits
•
•
•
•
•
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Reliable Performance at Higher Powers
Symmetrical Characteristics in Complementary Configurations
Accurate Reproduction of Input Signal
Greater Dynamic Range
High Amplifier Bandwidth
COLLECTOR 2, 4
1
BASE
1
BASE
EMITTER 3
EMITTER 3
MARKING
DIAGRAM
4
Applications
• High−End Consumer Audio Products
Home Amplifiers
Home Receivers
Professional Audio Amplifiers
♦ Theater and Stadium Sound Systems
♦ Public Address Systems (PAs)
♦
•
NJWxxxG
AYWW
♦
TO−3P
CASE 340AB
STYLES 1,2,3
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Symbol
Value
Unit
VCEO
250
Vdc
Collector−Base Voltage
VCBO
250
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
Collector−Emitter Voltage − 1.5 V
VCEX
250
Vdc
IC
15
Adc
ICM
30
Adc
Base Current − Continuous
IB
1.5
Adc
Total Power Dissipation @ TC = 25°C
PD
150
Watts
TJ, Tstg
− 65 to
+150
°C
Collector Current − Continuous
Collector Current − Peak (Note 1)
Operating and Storage Junction
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 1
1
1
2
3
xxxx
G
A
Y
WW
1
2
3
= 0281 or 0302
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NJW0281G
TO−3P
(Pb−Free)
30 Units/Rail
NJW0302G
TO−3P
(Pb−Free)
30 Units/Rail
Publication Order Number:
NJW0281/D
NJW0281G (NPN) NJW0302G (PNP)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
Value
Unit
RθJC
0.83
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
VCEO(sus)
250
−
V
Collector Cutoff Current
(VCB = 250 V, IE = 0)
ICBO
−
10
mA
Emitter Cutoff Current
(VEB = 5.0 V, IC = 0)
IEBO
−
5.0
mA
75
75
75
150
150
150
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mA, IB = 0)
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = 0.5 A, VCE = 5.0 V)
(IC = 1.0 A, VCE = 5.0 V)
(IC = 3.0 A, VCE = 5.0 V)
−
Collector−Emitter Saturation Voltage
(IC = 5.0 A, IB = 0.5 A)
VCE(sat)
−
1.0
V
Base−Emitter On Voltage
(IC = 5.0 A, VCE = 5.0 V)
VBE(on)
−
1.2
V
fT
30
−
MHz
Cob
−
400
pF
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1.0 A, VCE = 5.0 V, ftest = 1.0 MHz)
Output Capacitance
(VCB = 10 V, IE = 0, ftest = 1.0 MHz)
100
140
IC, COLLECTOR CURRENT (A)
PD, POWER DISSIPATION (W)
160
120
100
80
60
40
20
0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
1.0 ms
10
10 ms
100 ms
1
DC
0.1
0.01
160
5.0 ms
1
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Power Derating
Figure 2. Safe Operating Area
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2
1000
NJW0281G (NPN) NJW0302G (PNP)
500
hFE, DC CURRENT GAIN
VCE = 5.0 V
100°C
100
−25°C
25°C
10
0.05 0.1
10
25°C
1
10
Figure 4. NJW0302G DC Current Gain
−25°C
25°C
100°C
0.4
0.2
0
0.01
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
−25°C
Figure 3. NJW0281G DC Current Gain
0.8
10
100
IC, COLLECTOR CURRENT (A)
1
0.6
100°C
IC, COLLECTOR CURRENT (A)
VCE = 5.0 V
1.2
VCE = 5.0 V
10
0.05 0.1
50
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
1.4
1
0.1
1
10
100
50
2.4
VCE = 5.0 V
1.9
1.4
0.9
−25°C
100°C
0.4
25°C
−0.1
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. NJW0281G Base−Emitter Voltage
Figure 6. NJW0302G Base−Emitter Voltage
100
10
IC/IB= 10
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
500
1
25°C
100°C
0.1
0.01
0.01
−25°C
0.1
1
10
100
IC/IB= 10
1
100°C
0.1
0.01
0.01
25°C
−25°C
IC, COLLECTOR CURRENT (A)
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 7. NJW0281G Saturation Voltage
Figure 8. NJW0302G Saturation Voltage
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3
100
NJW0281G (NPN) NJW0302G (PNP)
70
50
VCE= 5.0 V
fT, CURRENT GAIN BANDWIDTH
PRODUCT (MHz)
fT, CURRENT GAIN BANDWIDTH
PRODUCT (MHz)
60
40
30
20
25°C
10
0
0.01
0.1
1
10
60
VCE= 5.0 V
50
40
30
20
25°C
10
0
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 9. NJW0281G Current Gain Bandwidth
Product
Figure 10. NJW0302G Current Gain Bandwidth
Product
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4
NJW0281G (NPN) NJW0302G (PNP)
PACKAGE DIMENSIONS
TO−3P−3LD
CASE 340AB−01
ISSUE A
B
A
B
C
Q
4
SEATING
PLANE
U
E
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND 0.30mm
FROM THE TERMINAL TIP.
4. DIMENSION A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
L
DIM
A
B
C
D
E
F
G
H
J
K
L
P
Q
U
W
(3°)
P
K
1
2
3
3X
D
0.25
G
M
A B
S
H
J
F
W
G
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
MILLIMETERS
MIN
NOM
MAX
19.70
19.90
20.10
15.40
15.60
15.80
4.60
4.80
5.00
0.80
1.00
1.20
1.45
1.50
1.65
1.80
2.00
2.20
5.45 BSC
1.20
1.40
1.60
0.55
0.60
0.75
19.80
20.00
20.20
18.50
18.70
18.90
3.30
3.50
3.70
3.10
3.20
3.50
5.00 REF
2.80
3.00
3.20
STYLE 2:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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NJW0281/D