NJW21193G (PNP) NJW21194G (NPN) Preferred Devices Silicon Power Transistors The NJW21193G and NJW21194G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features •Total Harmonic Distortion Characterized •High DC Current Gain - 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS hFE = 20 Min @ IC = 8 Adc •Excellent Gain Linearity •High SOA: 2.25 A, 80 V, 1 Second •These are Pb-Free Devices MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 250 Vdc Collector-Base Voltage VCBO 400 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector-Emitter Voltage - 1.5 V VCEX 400 Vdc Collector Current - Continuous Collector Current - Peak (Note 1) IC 16 30 Adc Base Current - Continuous IB 5.0 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 200 1.6 W W/°C TJ, Tstg -āā 65 to +150 °C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction-to-Case Characteristic RqJC 0.625 °C/W Thermal Resistance, Junction-to-Ambient RqJA 40 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. TO-3P CASE 340AB x G A Y WW NJW2119xG AYWW = 3 or 4 = Pb-Free Package = Assembly Location = Year = Work Week ORDERING INFORMATION Package Shipping NJW21193G Device TO-3P (Pb-Free) 30 Units/Rail NJW21194G TO-3P (Pb-Free) 30 Units/Rail Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2008 January, 2008 - Rev. 0 1 Publication Order Number: NJW21193/D NJW21193G (PNP) NJW21194G (NPN) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 250 - - Vdc Collector Cutoff Current (VCE = 200 Vdc, IB = 0) ICEO - - 100 mAdc Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) IEBO - - 100 mAdc Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) ICEX - - 100 mAdc 4.0 2.25 - - 20 8 - 80 - - - 2.2 - - 1.4 4 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non-repetitive) (VCE = 80 Vdc, t = 1 s (non-repetitive) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) hFE Base-Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output V RMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) THD hFE unmatched hFE matched - 0.8 - - 0.08 - fT 4 - - MHz Cob - - 500 pF Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) % NPN NJW21194G f, T CURRENT GAIN BANDWIDTH PRODUCT (MHz) f, T CURRENT GAIN BANDWIDTH PRODUCT (MHz) PNP NJW21193G 6.5 6.0 VCE = 10 V 5.5 5V 5.0 4.5 4.0 3.5 3.0 0.1 TJ = 25°C ftest = 1 MHz 1.0 10 8.0 7.0 10 V 6.0 5.0 VCE = 5 V 4.0 3.0 2.0 1.0 0 0.1 TJ = 25°C ftest = 1 MHz 1.0 IC COLLECTOR CURRENT (AMPS) IC COLLECTOR CURRENT (AMPS) Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product http://onsemi.com 2 10 NJW21193G (PNP) NJW21194G (NPN) TYPICAL CHARACTERISTICS PNP NJW21193G NPN NJW21194G 1000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 1000 TJ = 100°C 25°C 100 -25°C TJ = 100°C 25°C 100 -25°C VCE = 20 V 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 10 0.1 100 Figure 4. DC Current Gain, VCE = 20 V PNP NJW21193G NPN NJW21194G 1000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 100 Figure 3. DC Current Gain, VCE = 20 V 1000 TJ = 100°C 25°C 100 -25°C TJ = 100°C 25°C 100 -25°C VCE = 5 V 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 10 0.1 100 Figure 5. DC Current Gain, VCE = 5 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 Figure 6. DC Current Gain, VCE = 5 V PNP NJW21193G NPN NJW21194G 30 35 25 20 IB = 2 A I C, COLLECTOR CURRENT (A) 1.5 A I C, COLLECTOR CURRENT (A) 1.0 10 IC COLLECTOR CURRENT (AMPS) 1A 15 0.5 A 10 5.0 IB = 2 A 30 1.5 A 25 1A 20 15 0.5 A 10 5.0 TJ = 25°C TJ = 25°C 0 0 0 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 0 Figure 7. Typical Output Characteristics 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. Typical Output Characteristics http://onsemi.com 3 25 NJW21193G (PNP) NJW21194G (NPN) TYPICAL CHARACTERISTICS PNP NJW21193G NPN NJW21194G 1.4 TJ = 25°C IC/IB = 10 2.5 2.0 1.5 1.0 VBE(sat) 0.5 TJ = 25°C IC/IB = 10 1.2 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 3.0 1.0 VBE(sat) 0.8 0.6 0.4 0.2 VCE(sat) VCE(sat) 0 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 0 0.1 100 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 9. Typical Saturation Voltages Figure 10. Typical Saturation Voltages NPN NJW21194G 10 VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) PNP NJW21193G TJ = 25°C 1.0 0.1 0.1 VCE = 5 V (DASHED) 1.0 10 TJ = 25°C VCE = 20 V (SOLID) VCE = 5 V (DASHED) 0.1 0.1 100 1.0 10 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Typical Base-Emitter Voltage Figure 12. Typical Base-Emitter Voltage PNP NJW21193G NPN NJW21194G 100 100 10 mSec IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 10 1.0 VCE = 20 V (SOLID) 100 100 mSec 10 1 Sec 1.0 0.1 10 mSec 100 mSec 10 1 Sec 1.0 0.1 1.0 10 100 1000 1.0 10 100 1000 VCE, COLLECTOR EMITTER (VOLTS) VCE, COLLECTOR EMITTER (VOLTS) Figure 13. Active Region Safe Operating Area Figure 14. Active Region Safe Operating Area http://onsemi.com 4 NJW21193G (PNP) NJW21194G (NPN) There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 10000 10000 TC = 25°C C, CAPACITANCE (pF) Cib 1000 Cob 100 0.1 Cib 1000 Cob f(test) = 1 MHz) f(test) = 1 MHz) 1.0 10 100 0.1 100 1.0 10 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 15. NJW21193G Typical Capacitance Figure 16. NJW21194G Typical Capacitance 1.2 1.1 T , TOTAL HARMONIC HD DISTORTION (%) C, CAPACITANCE (pF) TC = 25°C 1.0 0.9 0.8 0.7 0.6 10 100 1000 10000 100000 FREQUENCY (Hz) Figure 17. Typical Total Harmonic Distortion http://onsemi.com 5 100 NJW21193G (PNP) NJW21194G (NPN) +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 50 W DUT 0.5 W 0.5 W DUT -50 V Figure 18. Total Harmonic Distortion Test Circuit http://onsemi.com 6 8.0 W NJW21193G (PNP) NJW21194G (NPN) PACKAGE DIMENSIONS TO-3P-3LD CASE 340AB-01 ISSUE A A B B C Q 4 SEATING PLANE U E A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM THE TERMINAL TIP. 4. DIMENSION A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. L (3°) P K 1 2 3 3X D 0.25 G M A B S H J F W G DIM A B C D E F G H J K L P Q U W MILLIMETERS MIN NOM MAX 19.70 19.90 20.10 15.40 15.60 15.80 4.60 4.80 5.00 0.80 1.00 1.20 1.45 1.50 1.65 1.80 2.00 2.20 5.45 BSC 1.20 1.40 1.60 0.55 0.60 0.75 19.80 20.00 20.20 18.50 18.70 18.90 3.30 3.50 3.70 3.10 3.20 3.50 5.00 REF 2.80 3.00 3.20 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P .O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 http://onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NJW21193/D