NJW3281G (NPN) NJW1302G (PNP) Preferred Devices Complementary NPN-PNP Silicon Power Bipolar Transistors The NJW3281G and NJW1302G are power transistors for high power audio, disk head positioners and other linear applications. http://onsemi.com Features •Exceptional Safe Operating Area •NPN/PNP Gain Matching within 10% from 50 mA to 5 A •Excellent Gain Linearity •High BVCEO •High Frequency •These are Pb-Free Devices 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS MARKING DIAGRAM Benefits •Reliable Performance at Higher Powers •Symmetrical Characteristics in Complementary Configurations •Accurate Reproduction of Input Signal •Greater Dynamic Range •High Amplifier Bandwith NJWxxxG AYWW Applications •High-End Consumer Audio Products TO-3P CASE 340AB STYLES 1,2,3 ♦Home Amplifiers ♦Home Receivers •Professional Audio Amplifiers ♦Theater and Stadium Sound Systems ♦Public Address Systems (PAs) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating xxxx G A Y WW = 0281 or 0302 = Pb-Free Package = Assembly Location = Year = Work Week Symbol Value Unit Collector-Emitter Voltage VCEO 250 Vdc Collector-Base Voltage VCBO 250 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector-Emitter Voltage - 1.5 V VCEX 250 Vdc IC 15 30 Adc Device Package Shipping Base Current - Continuous IB 1.6 Adc NJW3281G PD 200 1.43 W W/°C TO-3P (Pb-Free) 30 Units/Rail Total Power Dissipation @ TC = 25°C Derate Above 25°C NJW1302G -ā ā 65 to +150 °C TO-3P (Pb-Free) 30 Units/Rail TJ, Tstg Collector Current Collector Current - Continuous - Peak (Note 1) Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction-to-Case Characteristic RqJC 0.625 °C/W Thermal Resistance, Junction-to-Ambient RqJA 40 °C/W ORDERING INFORMATION Preferred devices are recommended choices for future use and best overall value. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. © Semiconductor Components Industries, LLC, 2008 January, 2008 - Rev. 0 1 Publication Order Number: NJW3281/D NJW3281G (NPN) NJW1302G (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 250 - - - - 50 - - 5 4 - - 75 75 75 60 45 - 150 150 150 - - 0.4 0.6 - - 1.5 - 30 - - - 600 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCB = 250 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) IEBO Vdc mAdc mAdc SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non-repetitive) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc) (IC = 1 Adc, VCE = 5 Vdc) (IC = 3 Adc, VCE = 5 Vdc) (IC = 5 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) VCE(sat) Base-Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) - Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) MHz Cob http://onsemi.com 2 pF NJW3281G (NPN) NJW1302G (PNP) TYPICAL CHARACTERISTICS PNP NJW1302G NPN NJW3281G 50 80 TJ = 25°C ftest = 1 MHz VCE = 10 V fTau, CURRENT BANDWIDTH PRODUCT (MHz) fTau, CURRENT BANDWIDTH PRODUCT (MHz) 60 40 5V 30 20 10 0 0.1 1 TJ = 25°C ftest = 1 MHz 60 5V 40 20 0 10 VCE = 10 V 0.1 IC, COLLECTOR CURRENT (A) 1 IC, COLLECTOR CURRENT (A) Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product 1000 1000 VCE = 5 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 5 V 125°C 25°C 100 -30°C 10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) 125°C 25°C 100 -30°C 10 0.1 100 Figure 3. DC Current Gain 1 10 IC, COLLECTOR CURRENT (A) 1000 VCE = 20 V hFE, DC CURRENT GAIN VCE = 20 V hFE, DC CURRENT GAIN 100 Figure 4. DC Current Gain 1000 125°C 25°C 100 -30°C 10 0.01 10 0.1 1 10 125°C 25°C 100 10 100 -30°C 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. DC Current Gain Figure 6. DC Current Gain http://onsemi.com 3 10 NJW3281G (NPN) NJW1302G (PNP) TYPICAL CHARACTERISTICS PNP NJW1302G NPN NJW3281G 1 5A COLLECTOR-EMITTER SATURATION VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1 3A 1A 0.1 0.5 A IC = 0.1 A 5A 1A 0.1 3A 0.5 A IC = 0.1 A TJ = 25°C 0.01 0.001 0.01 TJ = 25°C 0.1 0.01 0.001 1 0.1 1 IB, BASE CURRENT (A) Figure 7. Saturation Region Figure 8. Saturation Region 1 1 IC/IB = 10 SATURATION VOLTAGE (V) IC/IB = 10 SATURATION VOLTAGE (V) 0.01 IB, BASE CURRENT (A) 25°C 0.1 -30°C 125°C 0.1 25°C -30°C 125°C 0.01 0.01 0.1 1 10 100 IC, COLLECTER CURRENT (A) 0.1 1 10 IC, COLLECTER CURRENT (A) Figure 9. VCE(sat), Collector-Emitter Saturation Voltage Figure 10. VCE(sat), Collector-Emitter Saturation Voltage VCE = 5 V BASE-EMITTER VOLTAGE (V) 1.4 1.2 1.0 0.8 0.6 -30°C 25°C 0.4 125°C 0.2 0.0 0.01 100 1.6 1.6 BASE-EMITTER VOLTAGE (V) 0.01 0.01 0.1 1 10 100 1.4 VCE = 5 V 1.2 1.0 0.8 0.6 -30°C 25°C 0.4 125°C 0.2 0.0 0.01 0.1 1 10 IC, COLLECTER CURRENT (A) IC, COLLECTER CURRENT (A) Figure 11. VBE(on), Base-Emitter Voltage Figure 12. VBE(on), Base-Emitter Voltage http://onsemi.com 4 100 NJW3281G (NPN) NJW1302G (PNP) TYPICAL CHARACTERISTICS PNP NJW1302G TJ = 25°C fTest = 1 MHz 1000 800 600 400 200 TJ = 25°C fTest = 1 MHz 1000 800 600 400 200 0 0 0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 VCB, COLLECTER-BASE VOLTAGE (V) VCB, COLLECTER-BASE VOLTAGE (V) Figure 13. Output Capacitance Figure 14. Output Capacitance 12000 100 10000 TJ = 25°C fTest = 1 MHz 10000 Cib, INPUT CAPACITANCE (pF) Cib, INPUT CAPACITANCE (pF) NPN NJW3281G 1200 Cob, OUTPUT CAPACITANCE (pF) Cob, OUTPUT CAPACITANCE (pF) 1200 8000 6000 4000 2000 0 1 2 3 4 5 6 7 8 9 10 TJ = 25°C fTest = 1 MHz 8000 6000 4000 2000 0 2 4 6 8 VEB, EMITTER-BASE VOLTAGE (V) VEB, EMITTER-BASE VOLTAGE (V) Figure 15. Input Capacitance Figure 16. Input Capacitance http://onsemi.com 5 10 NJW3281G (NPN) NJW1302G (PNP) PNP NJW1302G NPN NJW3281G 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 100 10 mSec 10 100 mSec 1 Sec 1.0 0.1 10 mSec 10 100 mSec 1 Sec 1.0 0.1 1.0 10 100 VCE, COLLECTOR EMITTER (VOLTS) 1000 1.0 Figure 17. Active Region Safe Operating Area 10 100 VCE, COLLECTOR EMITTER (VOLTS) 1000 Figure 18. Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 17 and 18 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. http://onsemi.com 6 NJW3281G (NPN) NJW1302G (PNP) PACKAGE DIMENSIONS TO-3P-3LD CASE 340AB-01 ISSUE A A B B C Q 4 SEATING PLANE U E A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM THE TERMINAL TIP. 4. DIMENSION A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. L DIM A B C D E F G H J K L P Q U W (3°) P K 1 2 3 3X D 0.25 G M A B S H J F W G STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR MILLIMETERS MIN NOM MAX 19.70 19.90 20.10 15.40 15.60 15.80 4.60 4.80 5.00 0.80 1.00 1.20 1.45 1.50 1.65 1.80 2.00 2.20 5.45 BSC 1.20 1.40 1.60 0.55 0.60 0.75 19.80 20.00 20.20 18.50 18.70 18.90 3.30 3.50 3.70 3.10 3.20 3.50 5.00 REF 2.80 3.00 3.20 STYLE 2: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 3: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN PowerBase is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. 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