NJW44H11 D

NJW44H11G
80 V NPN, 10 A
Power Transistor
These series of plastic, silicon NPN power transistors can be used as
general purpose power amplification and switching such as output or
driver stages in applications such as switching regulators, converters
and power amplifiers.
Features
• Fast Switching Speeds
• High Frequency
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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80 VOLT, 10 AMPS
NPN POWER TRANSISTORS
Compliant
NPN
COLLECTOR 2, 4
Benefits
•
•
•
•
•
Reliable Performance at Higher Powers
Symmetrical Characteristics in Complementary Configurations
Accurate Reproduction of Input Signal
Greater Dynamic Range
High Amplifier Bandwidth
1
BASE
EMITTER 3
Applications
• High−end Consumer Audio Products
♦
♦
MARKING
DIAGRAM
4
Home Amplifiers
Home Receivers
NJWxxxG
AYWW
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector−Emitter Voltage
VCEO
80
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
IC
10
A
Collector Current − Peak (Note 1)
ICM
20
A
Total Power Dissipation @ TC = 25°C
PD
120
Watts
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RqJC
1.04
°C/W
TJ, Tstg
− 65 to
+150
°C
Collector Current − Continuous
THERMAL CHARACTERISTICS
Junction and Storage Temperature
Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
TO−3P
PLASTIC
CASE 340AB
1
2
3
xxx
G
A
Y
WW
1
2
3
= TBD
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
NJW44H11G
Package
Shipping
TO−3P
(Pb−Free)
30 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 0
1
Publication Order Number:
NJW44H11/D
NJW44H11G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector−Emitter Sustaining Voltage
(IC = 30 mAdc, IB = 0)
VCEO
80
−
−
Vdc
Collector−Cutoff Current
(VCE = Rated VCEO, VBE = 0)
ICES
−
−
10
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc)
IEBO
−
−
10
mAdc
100
80
−
−
400
320
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = 2 A, VCE = 2 V)
(IC = 4 A, VCE = 2 V)
−
Collector−Emitter Saturation Voltage
(IC = 8 A, IB = 400 mA)
VCE(sat)
−
−
1.0
V
Base−Emitter Turn−on Voltage
(IC = 8 A, VCE = 2.0 V)
VBE(on)
−
−
1.5
V
Cobo
−
65
−
pF
fT
−
85
−
MHz
td + tr
−
300
−
ns
Storage Time
(IC = 5.0 Adc, IB1 = IB2 = 0.5 A)
ts
−
500
−
ns
Fall Time
(IC = 5.0 Adc, IB1 = IB2 = 0.5 A)
tf
−
140
−
ns
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cutoff Frequency
(IC = 500 mA, VCE = 5 V, f = 1.0 MHz)
SWITCHING TIMES
Delay and Rise Times
(IC = 5.0 Adc, IB1 = 0.5 A)
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2
NJW44H11G
TYPICAL CHARACTERISTICS
500
500
450
150°C
400
350
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
450
25°C
300
250
200
−55°C
150
100
50
0
0.01
0.1
1
10
250
−55°C
200
150
100
VCE = 4 V
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
Figure 2. DC Current Gain
VCE(sat) @ IC/IB = 10
COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
150°C
0.30
0.25
25°C
0.20
0.15
0.10
−55°C
0.05
0.01
0.1
1
VCE(sat) @ IC/IB = 20
0.35
150°C
0.30
0.25
25°C
0.20
0.15
0.10
−55°C
0.05
0
10
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. Collector Emitter Saturation Voltage
Figure 4. Collector Emitter Saturation Voltage
1.2
1.2
1.0
BASE−EMITTER VOLTAGE (V)
BASE−EMITTER SATURATION VOLTAGE (V)
25°C
300
0.40
0.35
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0
350
IC, COLLECTOR CURRENT (A)
0.40
0
400
50
0
VCE = 2 V
150°C
VBE(sat) @ IC/IB = 10
0.01
0.1
1
1.0
25°C
0.6
150°C
0.4
0.2
0
10
−55°C
0.8
VBE(on) @ VCE = 4 V
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Saturation Voltage
Figure 6. Base Emitter “ON” Voltage
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3
10
NJW44H11G
TYPICAL CHARACTERISTICS
90
80
TJ = 25°C
f = 1 MHz
200
fT, CURRENT BANDWIDTH
PRODUCT (MHz)
Cob, OUTPUT CAPACITANCE (pF)
250
150
100
50
60
50
40
VCE = 5 V
ftest = 1 MHz
TJ = 25°C
30
20
10
0
0
10
20
30
40
50
60
70
0
80
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 7. Output Capacitance
Figure 8. Current Gain Bandwidth Product
100
IC, COLLECTOR CURRENT (A)
120
100
80
60
40
20
0
0.01
VCB, COLLECTOR−BASE VOLTAGE
140
PD, POWER DISSIPATION (W)
70
0
20
40
60
80
100
120
140
10
1 mS
10 mS
1
0.1
0.01
160
1 Sec
1
10
T, TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 9. Power Temperature Derating
Figure 10. Safe Operating Area (SOA)
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4
100
NJW44H11G
PACKAGE DIMENSIONS
TO−3P−3LD
CASE 340AB−01
ISSUE A
B
A
B
C
Q
4
SEATING
PLANE
U
E
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND 0.30mm
FROM THE TERMINAL TIP.
4. DIMENSION A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
L
DIM
A
B
C
D
E
F
G
H
J
K
L
P
Q
U
W
(3°)
P
K
1
2
3
3X
D
0.25
G
M
A B
S
H
J
F
W
G
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
MILLIMETERS
MIN
NOM
MAX
19.70
19.90
20.10
15.40
15.60
15.80
4.60
4.80
5.00
0.80
1.00
1.20
1.45
1.50
1.65
1.80
2.00
2.20
5.45 BSC
1.20
1.40
1.60
0.55
0.60
0.75
19.80
20.00
20.20
18.50
18.70
18.90
3.30
3.50
3.70
3.10
3.20
3.50
5.00 REF
2.80
3.00
3.20
STYLE 2:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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NJW44H11/D