MJH6284(NPN), MJH6287(PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching motor control applications. Features • • • • Similar to the Popular NPN 2N6284 and the PNP 2N6287 Rugged RBSOA Characteristics Monolithic Construction with Built−in Collector−Emitter Diode These are Pb−Free Devices* http://onsemi.com DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS, 160 WATTS MAXIMUM RATINGS Rating Collector−Emitter Voltage Symbol Max Unit VCEO 100 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 5.0 Vdc IC 20 40 Adc Collector Current − Continuous − Peak Base Current IB 0.5 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 160 1.28 W W/_C TJ, Tstg –65 to +150 _C Symbol Max Unit Operating and Storage Junction Temperature Range SOT−93 (TO−218) CASE 340D THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case 0.78 RqJC _C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TO−247 CASE 340L STYLE 3 PD , POWER DISSIPATION (WATTS) 160 140 120 NOTE: Effective June 2012 this device will be available only in the TO−247 package. Reference FPCN# 16827. 100 80 60 40 ORDERING INFORMATION 20 See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure 1. Power Derating *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 May, 2012 − Rev. 7 1 Publication Order Number: MJH6284/D MJH6284 (NPN), MJH6287 (PNP) MARKING DIAGRAMS TO−247 TO−218 MJH628x AYWWG 1 BASE AYWWG MJH628x 3 EMITTER 1 BASE 2 COLLECTOR 3 EMITTER 2 COLLECTOR MJH628x = Device Code x = 4 or 7 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Order Number Package Type Shipping MJH6284G TO−218 (Pb−Free) 30 Units / Rail MJH6287G TO−218 (Pb−Free) 30 Units / Rail MJH6284G TO−247 (Pb−Free) 30 Units / Rail MJH6287G TO−247 (Pb−Free) 30 Units / Rail http://onsemi.com 2 MJH6284 (NPN), MJH6287 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 − Vdc Collector Cutoff Current (VCE = 50 Vdc, IB = 0) ICEO − 1.0 mAdc Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C) ICEX − − 0.5 5.0 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 2.0 750 100 18,000 − − − 2.0 3.0 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 0.1 Adc, IB = 0) mAdc mAdc ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc) (IC = 20 Adc, VCE = 3.0 Vdc) − Collector−Emitter Saturation Voltage (IC = 10 Adc, IB = 40 mAdc) (IC = 20 Adc, IB = 200 mAdc) VCE(sat) Vdc Base−Emitter On Voltage (IC = 10 Adc, VCE = 3.0 Vdc) VBE(on) − 2.8 Vdc Base−Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc) VBE(sat) − 4.0 Vdc fT 4.0 − MHz − − 400 600 300 − − DYNAMIC CHARACTERISTICS Current−Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJH6284 MJH6287 Small−Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) Cob hfe pF SWITCHING CHARACTERISTICS Typical Resistive Load Delay Time VCC = 30 Vdc, IC = 10 Adc IB1 = IB2 = 100 mA Duty Cycle = 1.0% Rise Time Storage Time Fall Time Symbol NPN PNP Unit td 0.1 0.1 ms tr 0.3 0.3 ts 1.0 1.0 tf 3.5 2.0 1. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2.0%. RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA NPN MJH6284 VCC -30 V PNP MJH6287 COLLECTOR COLLECTOR RC SCOPE TUT V2 APPROX +12 V RB BASE 51 0 V1 APPROX -8.0 V ≈ 8.0 k D1 BASE ≈ 50 +4.0 V 25 ms tr, tf, ≤ 10 ns DUTY CYCLE = 1.0% EMITTER for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse diode and voltage polarities. Figure 2. Switching Times Test Circuit Figure 3. Darlington Schematic http://onsemi.com 3 EMITTER r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJH6284 (NPN), MJH6287 (PNP) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.05 0.03 0.01 SINGLE PULSE 0.02 0.02 0.01 0.01 0.02 0.03 0.05 P(pk) RqJC(t) = r(t) RqJC RqJC = 0.78°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 0.2 0.3 0.1 2.0 3.0 5.0 t, TIME (ms) 1.0 0.5 10 20 30 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1000 Figure 4. Thermal Response FBSOA, FORWARD BIAS SAFE OPERATING AREA IC, COLLECTOR CURRENT (AMPS) 50 20 0.1 ms 0.5 ms 10 1.0 ms 5.0 ms 5.0 dc 2.0 1.0 TJ = 150°C 0.5 SECOND BREAKDOWN LIMITED 0.2 0.1 0.05 2.0 BONDING WIRE LIMITED THERMAL LIMITATION @TC = 25°C (SINGLE PULSE) 5.0 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 5. MJH6284, MJH6287 FORWARD BIAS IC, COLLECTOR CURRENT (AMPS) 50 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 40 30 DUTY CYCLE = 10% 20 L = 200 mH IC/IB ≥ 100 TC = 25°C VBE(off) = 0-5.0 V RBE = 47 W 10 0 0 30 100 60 10 20 40 80 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 110 Figure 6. Maximum RBSOA, Reverse Bias Safe Operating Area http://onsemi.com 4 MJH6284 (NPN), MJH6287 (PNP) NPN PNP 5000 3000 2000 3000 TJ = 150°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 3.0 V VCE = 3.0 V 1000 25°C 500 300 150 0.2 0.3 0.5 1.0 2000 25°C 1000 -55°C 700 500 -55°C 200 TJ = 150°C 2.0 3.0 5.0 7.0 10 300 0.2 20 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMPS) 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMPS) 2.8 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain 2.6 TJ = 25°C 2.4 2.2 2.0 1.8 IC = 15 A 1.6 1.4 IC = 10 A 1.2 IC = 5.0 A 1.0 0.8 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2.8 2.6 2.4 2.2 2.0 1.8 IC = 15 A 1.6 IC = 10 A 1.4 1.2 IC = 5.0 A 1.0 0.8 1.0 2.0 3.0 5.0 IB, BASE CURRENT (mA) 10 20 30 50 100 200 300 500 1000 IB, BASE CURRENT (mA) Figure 8. Collector Saturation Region 3.0 TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 3.0 2.0 1.5 1.0 VBE @ VCE = 3.0 V VBE(sat) @ IC/IB = 250 2.0 VBE(sat) @ IC/IB = 250 1.5 0.2 0.3 0.5 0.7 1.0 VBE(on) @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.5 0.1 TJ = 25°C VCE(sat) @ IC/IB = 250 2.0 3.0 5.0 7.0 10 0.5 0.1 20 30 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 9. “On” Voltages http://onsemi.com 5 MJH6284 (NPN), MJH6287 (PNP) PACKAGE DIMENSIONS SOT−93 (TO−218) CASE 340D−02 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C Q B U DIM A B C D E G H J K L Q S U V 4 A L S E 1 K 2 3 J H D MILLIMETERS MIN MAX --20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF STYLE 1: PIN 1. 2. 3. 4. V G INCHES MIN MAX --0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 BASE COLLECTOR EMITTER COLLECTOR TO−247 CASE 340L−02 ISSUE F −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C −B− E U N L 4 A −Q− 1 2 0.63 (0.025) 3 P −Y− K F 2 PL W J D 3 PL 0.25 (0.010) M Y Q T B M STYLE 3: PIN 1. 2. 3. 4. H G M DIM A B C D E F G H J K L N P Q U W S http://onsemi.com 6 MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 MJH6284 (NPN), MJH6287 (PNP) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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