MJH6284(NPN), MJH6284(PNP) Preferred Device Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching motor control applications. Features • • • • Similar to the Popular NPN 2N6284 and the PNP 2N6287 Rugged RBSOA Characteristics Monolithic Construction with Built−in Collector−Emitter Diode Pb−Free Packages are Available* ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ http://onsemi.com DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS, 160 WATTS MAXIMUM RATINGS Rating Symbol Max Unit VCEO 100 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 5.0 Vdc IC 20 40 Adc Collector−Emitter Voltage Collector Current − Continuous − Peak Base Current IB 0.5 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 160 1.28 W W/_C TJ, Tstg – 65 to + 150 _C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 0.78 _C/W MARKING DIAGRAM SOT−93 (TO−218) CASE 340D A = Y = WW = G = MJH628x = Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. PD , POWER DISSIPATION (WATTS) MJH6284 140 MJH6284G 120 MJH6287 100 MJH6287G 80 60 Assembly Location Year Work Week Pb−Free Package Device Code x = 4 or 7 ORDERING INFORMATION Device 160 AYWWG MJH628x Package Shipping SOT−93 30 Units / Rail SOT−93 (Pb−Free) 30 Units / Rail SOT−93 30 Units / Rail SOT−93 (Pb−Free) 30 Units / Rail Preferred devices are recommended choices for future use and best overall value. 40 20 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure 1. Power Derating *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 July, 2006 − Rev. 5 1 Publication Order Number: MJH6284/D MJH6284 (NPN), MJH6284 (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 − Vdc Collector Cutoff Current (VCE = 50 Vdc, IB = 0) ICEO − 1.0 mAdc Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C) ICEX − − 0.5 5.0 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 2.0 750 100 18,000 − − − 2.0 3.0 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 0.1 Adc, IB = 0) mAdc mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc) (IC = 20 Adc, VCE = 3.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 10 Adc, IB = 40 mAdc) (IC = 20 Adc, IB = 200 mAdc) − VCE(sat) Vdc Base−Emitter On Voltage (IC = 10 Adc, VCE = 3.0 Vdc) VBE(on) − 2.8 Vdc Base−Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc) VBE(sat) − 4.0 Vdc fT 4.0 − MHz − − 400 600 300 − − DYNAMIC CHARACTERISTICS Current−Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob pF MJH6284 MJH6287 Small−Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) hfe SWITCHING CHARACTERISTICS Typical Resistive Load Delay Time VCC = 30 Vdc, IC = 10 Adc IB1 = IB2 = 100 mA Duty Cycle = 1.0% Rise Time Storage Time Fall Time Symbol NPN PNP Unit td 0.1 0.1 ms tr 0.3 0.3 ts 1.0 1.0 tf 3.5 2.0 1. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2.0%. RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA NPN MJH6284 VCC −30 V PNP MJH6287 COLLECTOR COLLECTOR RC SCOPE TUT V2 APPROX +12 V RB BASE 51 0 V1 APPROX −8.0 V ≈ 8.0 k D1 BASE ≈ 50 +4.0 V 25 ms tr, tf, ≤ 10 ns DUTY CYCLE = 1.0% EMITTER for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse diode and voltage polarities. Figure 2. Switching Times Test Circuit Figure 3. Darlington Schematic http://onsemi.com 2 EMITTER r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJH6284 (NPN), MJH6284 (PNP) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.05 0.03 0.01 SINGLE PULSE 0.02 0.02 0.01 0.01 0.02 0.03 0.05 P(pk) RqJC(t) = r(t) RqJC RqJC = 0.78°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1000 Figure 4. Thermal Response FBSOA, FORWARD BIAS SAFE OPERATING AREA IC, COLLECTOR CURRENT (AMPS) 50 20 0.1 ms 0.5 ms 10 1.0 ms 5.0 ms 5.0 dc 2.0 1.0 TJ = 150°C 0.5 SECOND BREAKDOWN LIMITED 0.2 0.1 0.05 2.0 BONDING WIRE LIMITED THERMAL LIMITATION @TC = 25°C (SINGLE PULSE) 5.0 10 50 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 100 Figure 5. MJH6284, MJH6287 IC, COLLECTOR CURRENT (AMPS) 50 FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 40 30 DUTY CYCLE = 10% 20 L = 200 mH IC/IB ≥ 100 TC = 25°C VBE(off) = 0−5.0 V RBE = 47 W 10 0 0 10 20 30 40 60 80 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 110 Figure 6. Maximum RBSOA, Reverse Bias Safe Operating Area http://onsemi.com 3 MJH6284 (NPN), MJH6284 (PNP) NPN PNP 3000 5000 2000 3000 TJ = 150°C hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 3.0 V VCE = 3.0 V 1000 25°C 500 300 150 0.2 0.3 0.5 1.0 2000 25°C 1000 −55 °C 700 500 −55 °C 200 TJ = 150°C 2.0 3.0 5.0 7.0 10 300 0.2 20 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMPS) 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMPS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain 2.8 2.6 TJ = 25°C 2.4 2.2 2.0 1.8 IC = 15 A 1.6 1.4 IC = 10 A 1.2 IC = 5.0 A 1.0 0.8 1.0 2.0 3.0 5.0 20 30 50 10 100 200 300 500 IB, BASE CURRENT (mA) 1000 2.8 2.6 2.4 2.2 2.0 1.8 IC = 15 A 1.6 IC = 10 A 1.4 1.2 IC = 5.0 A 1.0 0.8 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 IB, BASE CURRENT (mA) Figure 8. Collector Saturation Region 3.0 TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 3.0 2.0 1.5 1.0 VBE @ VCE = 3.0 V VBE(sat) @ IC/IB = 250 2.0 VBE(sat) @ IC/IB = 250 1.5 0.2 0.3 0.5 0.7 1.0 VBE(on) @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.5 0.1 TJ = 25°C VCE(sat) @ IC/IB = 250 2.0 3.0 5.0 7.0 10 0.5 0.1 20 30 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMPS) 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (AMPS) Figure 9. “On” Voltages http://onsemi.com 4 MJH6284 (NPN), MJH6284 (PNP) PACKAGE DIMENSIONS SOT−93 (TO−218) CASE 340D−02 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C Q B U S E DIM A B C D E G H J K L Q S U V 4 A L 1 K 2 3 D J H MILLIMETERS MIN MAX −−− 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF −−− 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF STYLE 1: PIN 1. 2. 3. 4. V G INCHES MIN MAX −−− 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF −−− 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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