TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general−purpose switching and amplifier applications. http://onsemi.com Features • DC Current Gain − • • • 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS hFE = 20−70 @ IC = 4.0 Adc Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excellent Safe Operating Area These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 60 Vdc Collector − Emitter Voltage VCER 70 Vdc Collector − Base Voltage VCB 100 Vdc Emitter − Base Voltage VEB 7.0 Vdc Collector Current − Continuous IC 15 Adc Base Current IB 7.0 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 90 0.72 W W/°C TJ, Tstg –65 to +150 °C Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.39 °C/W Thermal Resistance, Junction−to−Ambient RqJA 35.7 °C/W Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. SOT−93 (TO−218) CASE 340D STYLE 1 TO−247 CASE 340L STYLE 3 NOTE: Effective June 2012 this device will be available only in the TO−247 package. Reference FPCN# 16827. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 May, 2012 − Rev. 7 1 Publication Order Number: TIP3055/D TIP3055 (NPN), TIP2955 (PNP) MARKING DIAGRAMS TO−247 TO−218 TIPxx55 AYWWG 1 BASE AYWWG TIPxx55 3 EMITTER 1 BASE 2 COLLECTOR 2 COLLECTOR TIPxx55 A Y WW G 3 EMITTER = = = = = Device Code Assembly Location Year Work Week Pb−Free Package ORDERING INFORMATION Device Package Shipping TIP3055G SOT−93 (TO−218) (Pb−Free) 30 Units / Rail TIP2955G SOT−93 (TO−218) (Pb−Free) 30 Units / Rail TIP3055G TO−247 (Pb−Free) 30 Units / Rail TIP2955G TO−247 (Pb−Free) 30 Units / Rail http://onsemi.com 2 TIP3055 (NPN), TIP2955 (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 60 − Vdc Collector Cutoff Current (VCE = 70 Vdc, RBE = 100 Ohms) ICER − 1.0 mAdc Collector Cutoff Current (VCE = 30 Vdc, IB = 0) ICEO − 0.7 mAdc Collector Cutoff Current (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) ICEV − 5.0 mAdc Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO − 5.0 mAdc 20 5.0 70 − − − 1.1 3.0 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 4.0 Adc, IB = 400 mAdc) (IC = 10 Adc, IB = 3.3 Adc) VCE(sat) Vdc Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) − 1.8 Vdc Is/b 3.0 − Adc Current Gain — Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT 2.5 − MHz Small−Signal Current Gain (VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz) hfe 15 − kHz SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 30 Vdc, t = 1.0 s; Nonrepetitive) DYNAMIC CHARACTERISTICS NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. http://onsemi.com 3 TIP3055 (NPN), TIP2955 (PNP) hFE , DC CURRENT GAIN 1000 VCE = 4.0 V TJ = 25°C 100 10 0.1 TIP3055 TIP2955 0.2 0.5 0.7 1.0 0.3 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 1. DC Current Gain There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature. IC, COLLECTOR CURRENT (AMPS) 100 50 30 20 1.0ms 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 1.0 300 ms dc 10ms SECONDARY BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25°C TJ = 150°C 40 60 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Maximum Rated Forward Bias Safe Operating Area http://onsemi.com 4 TIP3055 (NPN), TIP2955 (PNP) PACKAGE DIMENSIONS SOT−93 (TO−218) CASE 340D−02 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C Q B U DIM A B C D E G H J K L Q S U V 4 A L S E 1 K 2 3 J H D MILLIMETERS MIN MAX --20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF STYLE 1: PIN 1. 2. 3. 4. V G INCHES MIN MAX --0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 BASE COLLECTOR EMITTER COLLECTOR TO−247 CASE 340L−02 ISSUE F −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C −B− E U N L 4 A −Q− 1 2 0.63 (0.025) 3 P −Y− K F 2 PL W J D 3 PL 0.25 (0.010) M Y Q T B M STYLE 3: PIN 1. 2. 3. 4. H G M DIM A B C D E F G H J K L N P Q U W S http://onsemi.com 5 MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 TIP3055 (NPN), TIP2955 (PNP) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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