HS-508BRH Data Sheet Radiation Hardened 8 Channel CMOS Analog Multiplexer with Overvoltage Protection The HS-508BRH is a dielectrically isolated, radiation hardened, CMOS analog multiplexer incorporating an important feature; it withstands analog input voltages much greater than the supplies. This is essential in any system where the analog inputs originate outside the equipment. They can withstand a continuous input up to 10V greater than either supply, which eliminates the possibility of damage when supplies are off, but input signals are present. Equally important, it can withstand brief input transient spikes of several hundred volts; which otherwise would require complex external protection networks. Necessarily, ON resistance is somewhat higher than similar unprotected devices, but very low leakage current combine to produce low errors. Reference Application Notes 520 and 521 for further information on the HS-508BRH multiplexer in general. The HS-508BRH has been specifically designed to meet exposure to radiation environments. Operation from -55oC to 125oC is guaranteed. Ordering Information INTERNAL MKT. NUMBER ORDERING NUMBER TEMP. RANGE (oC) 5962R9674202QEC HS1-508BRH-8 -55 to 125 5962R9674202QXC HS9-508BRH-8 -55 to 125 5962R9674202VEC HS1-508BRH-Q -55 to 125 5962R9674202VXC HS9-508BRH-Q -55 to 125 HS1-508BRH/PROTO HS1-508BRH/PROTO -55 to 125 HS9-508BRH/PROTO HS9-508BRH/PROTO -55 to 125 December 1999 File Number 4824 Features • Electrically Screened to SMD # 5962-96742 • QML Qualified per MIL-PRF-38535 Requirements • Radiation Environment - Gamma Dose (γ) . . . . . . . . . . . . . . . . . 3 x 105RAD(Si) - Dielectrically Isolated Device Islands - SEP >100 Mev-mg/cm2 • Analog/Digital Overvoltage Protection • ESD Rated to 3KV • Fail Safe with Power Loss (No Latchup) • Break-Before-Make Switching • DTL/TTL and CMOS Compatible • Analog Signal Range . . . . . . . . . . . . . . . . . . . . . . . . . . . .±15V • Fast Access Time • Supply Current at 1MHz Address Toggle . . . . . .4mA (Typ) • Standby Power . . . . . . . . . . . . . . . . . . . . . . . .7.5mW (Typ) Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-96742. A “hot-link” is provided on our homepage for downloading. www.intersil.com/spacedefense/newsafclasst.asp Pinouts HS1-508BRH 16 LEAD SIDEBRAZE DIP MIL-STD-1835, CDIP2-T16 TOP VIEW AO 1 EN 2 16 A1 A0 1 16 A1 15 A2 EN 2 15 A2 -VSUP 3 14 GND IN1 4 13 +VSUP IN2 5 12 IN5 14 GND -VSUP 3 HS9-508BRH 16 LEAD FLATPACK MIL-STD-1835, CDFP4-F16 TOP VIEW IN 1 4 13 +VSUP IN 2 5 12 IN 5 IN3 6 11 IN6 IN 3 6 11 IN 6 IN4 7 10 IN7 IN 4 7 10 IN 7 OUT 8 9 IN8 OUT 8 9 IN 8 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HS-508BRH Functional Diagram P A0 IN 1 N 1 DIGITAL ADDRESS A1 OUT A2 8 EN P ADDRESS INPUT BUFFER AND LEVEL SHIFTER DECODERS N IN 8 MULTIPLEX SWITCHES TRUTH TABLE A2 A1 A0 EN “ON” CHANNEL X X X L NONE L L L H 1 L L H H 2 L H L H 3 L H H H 4 H L L H 5 H L H H 6 H H L H 7 H H H H 8 2 HS-508BRH Die Characteristics DIE DIMENSIONS: Backside Finish: 120 mils x 93 mils x 19 mils Silicon INTERFACE MATERIALS: ASSEMBLY RELATED INFORMATION: Glassivation: Substrate Potential: Type: Phosphorus Silicon Glass (PSG) Thickness: 8kÅ ±1kÅ Unbiased (DI) ADDITIONAL INFORMATION: Top Metallization: Worst Case Current Density: Type: AlSiCu Thickness: 16kÅ ±2kÅ 6.68e04 A/cm2 Transistor Count: Substrate: 506 Rad Hard Silicon Gate Dielectric Isolation Metallization Mask Layout HS-508BRH IN2 IN1 -V IN3 EN IN4 OUT A0 IN8 A1 A2 IN7 IN6 IN5 +V GND All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 3