INTERSIL HS1-508BRH-Q

HS-508BRH
®
Data Sheet
January 2001
Radiation Hardened 8 Channel CMOS
Analog Multiplexer with Overvoltage
Protection
Features
• Electrically Screened to SMD # 5962-96742
The HS-508BRH is a dielectrically isolated, radiation
hardened, CMOS analog multiplexer incorporating an
important feature; it withstands analog input voltages much
greater than the supplies. This is essential in any system
where the analog inputs originate outside the equipment.
They can withstand a continuous input up to 10V greater than
either supply, which eliminates the possibility of damage when
supplies are off, but input signals are present. Equally
important, it can withstand brief input transient spikes of
several hundred volts; which otherwise would require complex
external protection networks. Necessarily, ON resistance is
somewhat higher than similar unprotected devices, but very
low leakage current combine to produce low errors.
Reference Application Notes 520 and 521 for further
information on the HS-508BRH multiplexer in general.
The HS-508BRH has been specifically designed to meet
exposure to radiation environments. Operation from -55oC to
125oC is guaranteed.
Ordering Information
INTERNAL
MKT. NUMBER
ORDERING NUMBER
FN4824.1
TEMP. RANGE
(oC)
5962F9674202QEC
HS1-508BRH-8
-55 to 125
5962F9674202QXC
HS9-508BRH-8
-55 to 125
5962F9674202VEC
HS1-508BRH-Q
-55 to 125
5962F9674202VXC
HS9-508BRH-Q
-55 to 125
HS1-508BRH/PROTO
HS1-508BRH/PROTO
-55 to 125
HS9-508BRH/PROTO
HS9-508BRH/PROTO
-55 to 125
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Gamma Dose (γ) . . . . . . . . . . . . . . . . . 3 x 105 Rad (Si)
- Dielectrically Isolated Device Islands
- SEP >100 Mev-mg/cm2
• Analog/Digital Overvoltage Protection
• ESD Rated to 3kV
• Fail Safe with Power Loss (No Latchup)
• Break-Before-Make Switching
• (Typ) DTL/TTL and CMOS Compatible Threshold
• Analog Signal Range. . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
• Fast Access Time
• Supply Current at 1MHz Address Toggle . . . . . .4mA (Typ)
• Standby Power . . . . . . . . . . . . . . . . . . . . . . . .7.5mW (Typ)
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-96742. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Pinouts
HS9-508BRH 16 LEAD FLATPACK
MIL-STD-1835, CDFP4-F16
TOP VIEW
HS1-508BRH 16 LEAD SIDEBRAZE DIP
MIL-STD-1835, CDIP2-T16
TOP VIEW
AO
1
EN 2
16 A1
A0
1
16
A1
15 A2
EN
2
15
A2
-VSUP
3
14
GND
IN1
4
13
+VSUP
IN2
5
12
IN5
14 GND
-VSUP 3
IN 1 4
13 +VSUP
IN 2 5
12 IN 5
IN3
6
11
IN6
IN 3 6
11 IN 6
IN4
7
10
IN7
IN 4 7
10 IN 7
OUT
8
9
IN8
OUT 8
9 IN 8
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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HS-508BRH
Functional Diagram
P
A0
DIGITAL
ADDRESS
IN 1
N
1
A1
OUT
A2
8
EN
P
ADDRESS INPUT
BUFFER AND
LEVEL SHIFTER
DECODERS
N
IN 8
MULTIPLEX
SWITCHES
Truth Table
A2
A1
A0
EN
“ON” CHANNEL
X
X
X
L
NONE
L
L
L
H
1
L
L
H
H
2
L
H
L
H
3
L
H
H
H
4
H
L
L
H
5
H
L
H
H
6
H
H
L
H
7
H
H
H
H
8
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FN4824.1
January 2001
HS-508BRH
Die Characteristics
DIE DIMENSIONS
Backside Finish
120 mils x 93 mils x 19 mils
Silicon
INTERFACE MATERIALS
ASSEMBLY RELATED INFORMATION
Glassivation
Substrate Potential
Type: Phosphorus Silicon Glass (PSG)
Thickness: 8kÅ ±1kÅ
Unbiased (DI)
ADDITIONAL INFORMATION
Top Metallization
Worst Case Current Density
Type: AlSiCu
Thickness: 16kÅ ±2kÅ
6.68e04 A/cm2
Transistor Count
Substrate
506
Rad Hard Silicon Gate
Dielectric Isolation
Metallization Mask Layout
HS-508BRH
IN2
IN1
-V
IN3
EN
IN4
OUT
A0
IN8
A1
A2
IN7
IN6
IN5
+V
GND
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3
FN4824.1
January 2001