MURD620CT D

MURD620CTG,
MURD620CTT4G,
NRVUD620CTG,
NRVUD620CTT4G
SWITCHMODE
Power Rectifier
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DPAK Surface Mount Package
These state−of−the−art devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
ULTRAFAST RECTIFIER
6.0 AMPERES
200 VOLTS
Features
•
•
•
•
•
•
Ultrafast 35 Nanosecond Recovery Time
Low Forward Voltage Drop
Low Leakage
ESD Rating:
♦ Human Body Model = 3B (> 8 kV)
♦ Machine Model = C (> 400 V)
NRVUD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant*
DPAK
CASE 369C
1
4
3
MARKING DIAGRAM
AYWW
U
620TG
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
A
Y
WW
U620T
G
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
MURD620CTG
DPAK
(Pb−Free)
75 Units / Rail
NRVUD620CTG
DPAK
(Pb−Free)
75 Units / Rail
MURD620CTT4G
DPAK
(Pb−Free)
2,500 /
Tape & Reel
NRVUD620CTT4G
DPAK
(Pb−Free)
2,500 /
Tape & Reel
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 11
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MURD620CT/D
MURD620CTG, MURD620CTT4G, NRVUD620CTG, NRVUD620CTT4G
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
200
V
Average Rectified Forward Current
(Rated VR, TC = 140°C)
Per Diode
Per Device
IF(AV)
A
3.0
6.0
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 145°C)
Per Diode
IF
A
6.0
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, 60 Hz)
IFSM
Operating Junction and Storage Temperature Range
TJ, Tstg
50
−65 to +175
A
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Per Diode)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Case
RqJC
9
°C/W
Thermal Resistance, Junction−to−Ambient (Note 1)
RqJA
80
°C/W
Symbol
Value
Unit
1. Rating applies when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (Per Diode)
Characteristic
Maximum Instantaneous Forward Voltage Drop (Note 2)
(iF = 3 Amps, TC = 25°C)
(iF = 3 Amps, TC = 125°C)
(iF = 6 Amps, TC = 25°C)
(iF = 6 Amps, TC = 125°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(TJ = 25°C, Rated dc Voltage)
(TJ = 125°C, Rated dc Voltage)
iR
Maximum Reverse Recovery Time
(IF = 1 Amp, di/dt = 50 Amps/ms, VR = 30 V, TJ = 25°C)
(IF = 0.5 Amp, iR = 1 Amp, IREC = 0.25 A, VR = 30 V, TJ = 25°C)
trr
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
1
0.96
1.2
1.13
5
250
35
25
V
mA
ns
MURD620CTG, MURD620CTT4G, NRVUD620CTG, NRVUD620CTT4G
100
100
IR, REVERSE CURRENT (mA)
70
50
20
10
7.0
150°C
1
100°C
0.1
0.01
25°C
0.001
0.0001
0
20
40
5.0
60 80 100 120 140 160 180 200
VR, REVERSE VOLTAGE (V)
Figure 2. Typical Leakage Current* (Per Leg)
3.0
175°C
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these curves if VR is sufficiently below rated
VR.
TJ = 25°C
2.0
150°C
100°C
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
30
TJ = 175°C
10
1.0
0.7
0.5
0.3
0.2
0.1
0
0.2
0.4
0.6
1.0
0.8
1.2
1.4
vF, INSTANTANEOUS VOLTAGE (V)
14
13
12
11
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
5.0
10
SINE
WAVE
IPK/IAV = 20
dc
SQUARE
WAVE
TJ = 175°C
1.0
0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 1. Typical Forward Voltage (Per Leg)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Average Power Dissipation (Per Leg)
8.0
RATED VOLTAGE APPLIED
RqJC = 9°C/W
7.0
6.0
TJ = 175°C
5.0
dc
4.0
SINE WAVE
OR
SQUARE WAVE
3.0
2.0
1.0
0
100
110
120
130
140
150
160
170
180
4.0
RATED VOLTAGE APPLIED
RqJA = 80°C/W
3.5
3.0
SURFACE MOUNTED ON
MIN. PAD SIZE RECOMMENDED
2.5
2.0
dc
TJ = 175°C
1.5
SINE WAVE
OR
SQUARE WAVE
1.0
0.5
0
0
20
40
60
80
100
120
140
160
180 200
TC, CASE TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Current Derating, Case (Per Leg)
Figure 5. Current Derating, Ambient (Per Leg)
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3
MURD620CTG, MURD620CTT4G, NRVUD620CTG, NRVUD620CTT4G
C, CAPACITANCE (pF)
100
TJ = 25°C
10
1
0
10
20
30
40
50
60
70
80
VR, REVERSE VOLTAGE (V)
Figure 6. Typical Capacitance (Per Leg)
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4
90
100
MURD620CTG, MURD620CTT4G, NRVUD620CTG, NRVUD620CTT4G
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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PUBLICATION ORDERING INFORMATION
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5
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For additional information, please contact your local
Sales Representative
MURD620CT/D