BYV32 200 D

BYV32-200
Switch‐mode
Power Rectifier
Features and Benefits
•
•
•
•
•
•
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
16 A Total (8 A Per Diode Leg)
These Devices are Pb−Free and are RoHS Compliant*
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ULTRAFAST RECTIFIER
16 AMPERES, 200 VOLTS
trr = 35 ns
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
1
2, 4
3
Mechanical Characteristics
•
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Rating: Human Body Model 3B
Machine Model C
MARKING
DIAGRAM
4
TO−220
CASE 221
STYLE 6
1
2
AYWW
BYV32-200G
AKA
3
A
Y
WW
BYV32−200
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
Device
Package
Shipping
BYV32−200G
TO−220
(Pb−Free)
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 5
1
Publication Order Number:
BYV32−200/D
BYV32−200
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
200
V
Average Rectified Forward Current, TC = 156°C
Per Leg
Total Device
IF(AV)
A
8.0
16
Peak Rectified Forward Current (Square Wave, 20 kHz),
TC = 154°C − Per Diode Leg
IFM
16
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
100
A
TJ, Tstg
−65 to +175
°C
Operating Junction Temperature and Storage Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Conditions
Symbol
Value
Unit
Maximum Thermal Resistance, Junction−to−Case
Min. Pad
RqJC
3.0
°C/W
Maximum Thermal Resistance, Junction−to−Ambient
Min. Pad
RqJA
60
Min
Typical
Max
−
−
0.74
1.01
0.85
1.15
−
−
21
3.5
600
50
−
−
−
−
35
25
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Instantaneous Forward Voltage (Note 1)
(iF = 5.0 A, Tj = 100°C)
(iF = 20 A, Tj = 25°C)
vF
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, Tj = 100°C)
(Rated dc Voltage, Tj = 25°C)
iR
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/ms)
(IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A)
trr
Unit
V
mA
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%
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2
BYV32−200
IF, INSTANTANEOUS FORWARD CURRENT (A)
100
70
50
30
TJ = 175°C
100°C
10
7.0
175°C
100°C
10
0.1
0.2 0.3 0.4
5.0
0.5 0.6
0.7 0.8
0.9 1.0
1.3 1.4
1.1 1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
3.0
800
400
200
80
40
20
8.0
4.0
2.0
2.0
1.0
0.7
0.5
0.3
0.2
TJ = 175°C
100°C
0.8
0.4
0.2
0.08
0.04
0.02
25°C
0
40
20
0.1
0.2 0.3
0.5
0.4
0.7
0.6
0.8
0.9
1.0
1.1
60
80
100
120
140
160
180 200
VR, REVERSE VOLTAGE (VOLTS)
1.2
Figure 3. Typical Reverse Current, Per Leg*
vF, INSTANTANEOUS VOLTAGE (VOLTS)
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if VR is sufficiently below
rated VR.
Figure 1. Typical Forward Voltage, Per Leg
20
20
IF(AV), AVERAGE FORWARD CURRENT (A)
IF(AV), AVERAGE FORWARD CURRENT (A)
25°C
1.0
25°C
IR, REVERSE CURRENT (m A)
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
20
100
18
16
14
12
10
dc
8.0
6.0
SQUARE WAVE
4.0
2.0
0
140
145
150
155
160
165
170
175
180
RqJA = 16°C/W
RqJA = 60°C/W
(NO HEATSINK)
18
16
14
dc
12
10
8.0
SQUARE WAVE
6.0
dc
4.0
SQUARE WAVE
2.0
0
0
TC, CASE TEMPERATURE (°C)
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Current Derating, Case, Per Leg
Figure 5. Current Derating, Ambient, Per Leg
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3
175
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
BYV32−200
24
TJ = 175°C
22
20
SQUARE WAVE
18
16
dc
14
12
10
8.0
6.0
4.0
2.0
0
0
2.0
4.0
6.0
8.0
10
14
12
16
18
20
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Power Dissipation, Per Leg
C, CAPACITANCE (pF)
1000
300
TJ = 25°C
100
30
10
1.0
10
VR, REVERSE VOLTAGE (VOLTS)
100
Figure 7. Typical Capacitance, Per Leg
100
50% Duty Cycle
R(t) (°C/W)
10
1
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 8. Thermal Response, Junction−to−Ambient
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4
10
100
1000
BYV32−200
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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PUBLICATION ORDERING INFORMATION
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5
ON Semiconductor Website: www.onsemi.com
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For additional information, please contact your local
Sales Representative
BYV32−200/D