ONSEMI BYW51-200G

BYW51−200
SWITCHMODEt
Power Rectifier
Features and Benefits
•
•
•
•
•
•
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
16 A Total (8 A Per Diode Leg)
Pb−Free Packages are Available*
http://onsemi.com
ULTRAFAST RECTIFIER
16 AMPERES, 200 VOLTS
trr = 35 ns
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
1
2, 4
3
Mechanical Characteristics
•
•
•
•
•
•
MARKING
DIAGRAM
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Rating: Human Body Model 3B
Machine Model C
TO−220AB
CASE 221A
PLASTIC
A
Y
WW
BYW51−200
G
AKA
AYWW
BYW51−200G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
Device
BYW51−200
BYW51−200G
Package
Shipping
TO−220
50 Units/Rail
TO−220
(Pb−Free)
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 3
1
Publication Order Number:
BYW51−200/D
BYW51−200
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
200
V
Average Rectified Forward Current
TC = 156°C
Per Leg
Total Device
IF(AV)
A
8.0
16
Peak Rectified Forward Current
(Square Wave, 20 kHz),
TC = 153°C − Per Diode Leg
IFM
16
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
100
A
TJ, Tstg
−65 to +175
°C
Operating Junction Temperature and Storage Temperature
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Conditions
Symbol
Value
Unit
Maximum Thermal Resistance, Junction−to−Case
Characteristic
Min. Pad
RqJC
3.0
°C/W
Maximum Thermal Resistance, Junction−to−Ambient
Min. Pad
RqJA
60.0
Min
Typical
Max
−
−
0.8
0.89
0.89
0.97
−
−
21
3.8
1000
10
−
−
35
25
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Instantaneous Forward Voltage (Note 1)
(iF = 8.0 A, Tj = 100°C)
(iF = 8.0 A, Tj = 25°C)
vF
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, Tj = 100°C)
(Rated dc Voltage, Tj = 25°C)
iR
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/s)
(IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A)
trr
1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%
http://onsemi.com
2
Unit
V
mA
ns
BYW51−200
70
50
30
100°C
10
7.0
175°C
25°C
100°C
10
1.0
0.1
0.2 0.3
25°C
5.0
0.4
0.5
0.6
0.7
0.9
0.8
1.0
1.1
1.2
1.3
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
3.0
2.0
IR, REVERSE CURRENT (m A)
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
20
TJ = 175°C
100
IF, INSTANTANEOUS FORWARD CURRENT (A)
100
1.0
0.7
0.5
0.3
0.2
800
400
200
80
40
20
8.0
4.0
2.0
TJ = 175°C
100°C
0.8
0.4
0.2
0.08
0.04
0.02
25°C
0
20
40
60
80
100
120
140
160
180 200
VR, REVERSE VOLTAGE (VOLTS)
0.1
0.2 0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Figure 3. Typical Reverse Current, Per Leg*
1.2
* The curves shown are typical for the highest voltage device in the voltage
grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR.
vF, INSTANTANEOUS VOLTAGE (VOLTS)
20
20
IF(AV), AVERAGE FORWARD CURRENT (A)
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 1. Typical Forward Voltage, Per Leg
18
16
14
12
10
dc
8.0
6.0
SQUARE WAVE
4.0
2.0
0
140
145
150
155
160
165
170
175
180
RqJA = 16°C/W
RqJA = 60°C/W
(NO HEATSINK)
18
16
14
dc
12
10
8.0
SQUARE WAVE
6.0
dc
4.0
SQUARE WAVE
2.0
0
0
TC, CASE TEMPERATURE (°C)
25
50
75
100
125
150
175
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Current Derating, Case, Per Leg
Figure 5. Current Derating, Ambient, Per Leg
http://onsemi.com
3
24
1000
22
TJ = 175°C
20
18
SQUARE WAVE
16
14
12
C, CAPACITANCE (pF)
PF(AV), AVERAGE POWER DISSIPATION (W)
BYW51−200
dc
10
8.0
6.0
300
TJ = 25°C
100
30
4.0
2.0
0
10
0
2.0
4.0
6.0
8.0
10
12
14
16
18
1.0
20
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Power Dissipation, Per Leg
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Typical Capacitance, Per Leg
http://onsemi.com
4
100
BYW51−200
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AD
−T−
B
SEATING
PLANE
C
F
T
S
INCHES
DIM MIN
MAX
A
0.570
0.620
B
0.380
0.405
C
0.160
0.190
D
0.025
0.035
F
0.142
0.147
G
0.095
0.105
H
0.110
0.155
J
0.018
0.025
K
0.500
0.562
L
0.045
0.060
N
0.190
0.210
Q
0.100
0.120
R
0.080
0.110
S
0.045
0.055
T
0.235
0.255
U
0.000
0.050
V
0.045
−−−
Z
−−− 0.080
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
4
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BYW51−200/D