MSR1560G, MSRF1560G Switch-mode Soft Recovery Power Rectifier These state−of−the−art devices are designed for boost converter or hard−switched converter applications, especially for Power Factor Correction application. It could also be used as a free wheeling diode in variable speed motor control applications and switching mode power supplies. Features • Soft Recovery with Low Reverse Recovery Charge (QRR) and Peak • • • • • Reverse Recovery Current (IRRM) Epoxy meets UL 94 V−0 @ 0.125 in Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction These are Pb−Free Devices http://onsemi.com SOFT RECOVERY POWER RECTIFIER 15 AMPERES, 600 VOLTS 1 4 3 4 4 Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads Readily Solderable • Lead Temperature for Soldering Purposes: 3 TO−220AC CASE 221B STYLE 1 260°C Max. for 10 Seconds MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 600 V IO 15 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz,TC = 125°C) IFRM 30 A Non−Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 100 A TJ, Tstg −65 to +150 °C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 125°C) Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Parameter Symbol Value MSR1560G: Thermal Resistance Junction−to−Case Junction−to−Ambient RqJC RqJA 1.6 72.8 MSRF1560G: Thermal Resistance Junction−to−Case Junction−to−Ambient RqJC RqJA 4.25 75 Unit °C/W °C/W February, 2014 − Rev. 7 1 3 TO−220 FULLPAK CASE 221AG STYLE 1 MARKING DIAGRAMS AY WWG MSR1560 KA A Y WW G KA AYWWG MSRF1560 KA = Assembly Location = Year = Work Week = Pb−Free Package = Diode Polarity ORDERING INFORMATION Device Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2014 1 1 Package Shipping MSR1560G TO−220AC (Pb−Free) 50 Units/Rail MSRF1560G TO−220FP (Pb−Free) 50 Units/Rail Publication Order Number: MSR1560/D MSR1560G, MSRF1560G ELECTRICAL CHARACTERISTICS Characteristic Symbol Instantaneous Forward Voltage (Note 1) (IF = 15 A) Maximum Typical VF Instantaneous Reverse Current (VR = 600 V) Maximum Typical IR Reverse Recovery Time (Note 2) (VR = 30 V, IF = 1 A, di/dt = 100 A/ms) Maximum Typical trr Typical Recovery Softness Factor (VR = 30 V, IF = 1 A, di/dt = 100 A/ms) Value Unit V TJ = 25°C TJ = 150°C 1.8 1.5 1.4 1.2 TJ = 25°C TJ = 150°C 15 0.4 5000 100 TJ = 25°C TJ = 100°C 45 35 65 54 s = tb/ta 0.67 0.74 Typical Peak Reverse Recovery Current (VR = 30 V, IF = 1 A, di/dt = 100 A/ms) IRRM 2.3 3.2 A Typical Reverse Recovery Charge (VR = 30 V, IF = 1 A, di/dt = 100 A/ms) QRR 31 78 nC mA ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2% 2. TRR measured projecting from 25% of IRRM to zero current 100 100 zl VF @ 150°C IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) VF @ 150°C VF @ 25°C 10 VF @ 100°C 1 0.1 0.3 0.7 1.1 1.5 1.9 2.3 VF, INTANTANEOUS VOLTAGE (VOLTS) VF @ 25°C 10 VF @ 100°C 1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 VF, INSTANTANEOUS FORWARD CURRENT (AMPS) 2.7 Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage http://onsemi.com 2 MSR1560G, MSRF1560G 1000 IR, REVERSE CURRENT (mA) 1000 IR @ 150°C 100 IR @ 100°C 10 1 0.1 IR @ 25°C 0 100 200 300 400 500 IF(AV), AVERAGE FORWARD IR @ 150°C 10 IR @ 100°C 1 0.1 IR @ 25°C 0.01 0.001 600 0 100 200 500 Figure 3. Maximum Reverse Current Figure 4. Typical Reverse Current 600 30 dc TJ = 150°C TJ = 150°C 20 15 Square Wave 10 Square Wave dc 10 5 0 50 100 200 150 0 0 10 20 TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Power Dissipation 350 400 TJ = 25°C TJ = 25°C 300 C, CAPACITANCE (pF) 350 300 250 200 150 100 250 200 150 100 50 50 0 400 VR, REVERSE VOLTAGE (VOLTS) 20 0 300 VR, REVERSE VOLTAGE (VOLTS) 25 C, CAPACITANCE (pF) 100 PF(AV), AVERAGE POWER DISSIPATION (WATTS) IR, REVERSE CURRENT (mA) 10000 0 10 20 30 40 0 0 50 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 7. Maximum Capacitance Figure 8. Typical Capacitance http://onsemi.com 3 50 MSR1560G, MSRF1560G 60 80 60 Time (nsec) Trr vs. di/dt @ 25°C 40 30 ta vs. di/dt @ 25°C 20 0 25 ta tb 20 tb vs. di/dt @ 25°C 10 trr 40 100 175 0 25 250 75 125 dI/dt (A/mS) TEMPERATURE (°C) Figure 9. Typical Trr vs. di/dt Figure 10. Typical Trr vs. Temperature QRR, REVERSE RECOVERY CHARGE (nC) Time (nsec) 50 175 3 40 IF = 1 A TJ = 25°C 2 0 IF = 1 A 30 TJ = 25°C 20 1 25 75 125 175 225 25 100 175 dI/dt (A/mS) dIF/dt (A/mS)) Figure 11. Typical Peak Reverse Recovery Current Figure 12. Typical Reverse Recovery Charge EOFF, SWITCHING OFF LOSSES (mJ) IRRM, PEAK RECOVERY CURRENT (AMPS) 50 65 55 IF = 1 A VR = 30 V 45 35 25 25 100 175 dIF/dt (A/mS) Figure 13. Typical Switching Off Losses http://onsemi.com 4 250 250 MSR1560G, MSRF1560G R(t), TRANSIENT THERMAL RESISTANCE 10 ID = 0.5 1 0.1 0.05 0.01 Single Pulse 0.1 0.0001 0.001 0.01 0.1 1 10 t, Time (S) Figure 14. Transient Thermal Response r(t), TRANSIENT THERMAL RESPONSE (NORMALIZED) (°C/W) 10 D = 0.5 1.0 0.1 0.2 0.1 0.05 0.02 P(pk) 0.01 0.01 0.001 0.000001 t1 SINGLE PULSE 0.00001 t2 DUTY CYCLE, D = t1/t2 0.0001 0.001 0.01 t, TIME (s) 0.1 1.0 ZqJC(t) = r(t) RqJC RqJC = 1.6°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 10 Figure 15. Thermal Response, (MSRF1560) Junction−to−Case (RqJC) http://onsemi.com 5 100 1000 MSR1560G, MSRF1560G r(t), TRANSIENT THERMAL RESPONSE (NORMALIZED) (°C/W) 100 10 D = 0.5 0.2 0.1 0.05 0.02 1.0 0.01 P(pk) 0.1 0.01 0.001 0.000001 t1 SINGLE PULSE 0.00001 t2 DUTY CYCLE, D = t1/t2 0.0001 0.001 0.01 t, TIME (s) 0.1 1.0 ZqJC(t) = r(t) RqJC RqJC = 1.6°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 10 Figure 16. Thermal Response, (MSRF1560) Junction−to−Ambient (RqJA) http://onsemi.com 6 100 1000 MSR1560G, MSRF1560G PACKAGE DIMENSIONS TO−220 TWO−LEAD CASE 221B−04 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B Q F T S DIM A B C D F G H J K L Q R S T U 4 A 1 U 3 H K L R D J G INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.039 0.142 0.161 0.190 0.210 0.110 0.130 0.014 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.82 0.64 1.00 3.61 4.09 4.83 5.33 2.79 3.30 0.36 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27 STYLE 1: PIN 1. 2. 3. 4. CATHODE N/A ANODE CATHODE TO−220 FULLPAK, 2−LEAD CASE 221AG ISSUE A A E B P E/2 0.14 M B A M A H1 A1 4 Q D C NOTE 3 1 2 3 L L1 3X 3X b2 c b 0.25 M B A M C A2 e e1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. MILLIMETERS DIM MIN MAX A 4.30 4.70 A1 2.50 2.90 A2 2.50 2.90 b 0.54 0.84 b2 1.10 1.40 c 0.49 0.79 D 14.22 15.88 E 9.65 10.67 e 2.54 BSC e1 5.08 BSC H1 5.97 6.48 CATHODE N/A L 12.70 14.73 ANODE L1 --2.80 P 3.00 3.40 Q 2.80 3.20 SEATING PLANE STYLE 1: PIN 1. 2. 3. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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