NHPV15S600 D

NHPV15S600G,
NHPJ15S600G
SWITCHMODE
Power Rectifiers
Features
•
•
•
•
•
•
•
•
http://onsemi.com
Ultrafast 30 Nanosecond Recovery Time
150°C Operating Junction Temperature
High Voltage Capability of 600 V
ESD Ratings:
♦ Machine Model = C
♦ Human Body Model = 3A
Low Forward Drop
Low Leakage Specified @ 125°C Case Temperature
These Devices are Pb−Free and are RoHS Compliant*
NHPJ15S600G is Halogen−Free/BFR−Free
PLANAR ULTRAFAST
RECTIFIERS 15 A, 600 V
1
4
3
3
1
4
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for
10 Seconds
1
1
3
TO−220AC
CASE 221B
3
TO−220 FULLPAK
CASE 221AG
MARKING DIAGRAMS
AY WW
HPV15S600G
KA
A
Y
WW
G
KA
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
March, 2013 − Rev. 0
1
AYWW
HPJ15S600G
KA
=
=
=
=
=
Assembly Location
Year
Work Week
Pb−Free Package
Diode Polarity
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NHPV15S600/D
NHPV15S600G, NHPJ15S600G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
Value
Unit
VRRM
VRWM
VR
600
V
Average Rectified Forward Current (Rated VR)
TO−220AC
TO−220FP
IF(AV)
15 A @ TC = 118°C
15 A @ TC = 60°C
A
Peak Rectified Forward Current (Rated VR, Square Wave, 20 kHz)
TO−220AC
TO−220FP
IFRM
15 A @ TC = 110°C
15 A @ TC = 40°C
A
IFSM
150
A
TJ, Tstg
−55 to +150
°C
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions
halfwave, single phase, 60 Hz)
Operating Junction Temperature and Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
NHPV15S600G: Thermal Resistance
Junction−to−Case
Junction−to−Ambient
RqJC
RqJA
1.5
73
NHPJ15S600G: Thermal Resistance
Junction−to−Case
Junction−to−Ambient
RqJC
RqJA
4.25
75
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
1.5
2.7
1.8
3.2
46
0.1
800
60
trr
−
−
30
50
ns
IRM
Qrr
S
7.7
220
0.15
9.9
−
−
A
nC
−
200
6
ns
V
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 15 A, TC = 125°C)
(iF = 15 A, TC = 25°C)
vF
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TC = 125°C)
(Rated DC Voltage, TC = 25°C)
iR
Maximum Reverse Recovery
Time
(IF = 0.5 A, Irr = 0.25 A, IR = 1 A)
(IF = 1 A, dIF/dt = −50 A/ms, VR = 30 V)
Current
Charge
Softness
(IF = 15 A, dIF/dt = −200 A/ms, TC = 125°C)
Maximum Forward Recovery
Time
Voltage
(IF = 15 A, dIF/dt = 120 A/ms, TC = 25°C)
tfr
VFP
Unit
V
mA
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
Package
Shipping†
NHPV15S600G
TO−220AC
(Pb−Free)
50 Units / Rail
NHPJ15S600G
TO−220FP
(Pb−Free / Halide−Free)
50 Units / Rail
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
NHPV15S600G, NHPJ15S600G
TYPICAL CHARACTERISTICS
1000
IR, INSTANTANEOUS REVERSE
CURRENT (mA)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
TA = 150°C
TA = 25°C
10
TA = 125°C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
1
0.01
4.0
3.5
200
300
400
500
600
Figure 2. Typical Reverse Characteristics
30
0.1
1
10
100
IF(AV), AVERAGE FORWARD
CURRENT (A)
25
Square Wave
15
10
5
60
80
100
120
140
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 3. Typical Junction Capacitance
Figure 4. Current Derating TO−220AC
25
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
30
RqJC = 4.25°C/W
dc
20
Square Wave
10
5
0 10
RqJC = 1.5°C/W
dc
20
0
1000
30
0
100
Figure 1. Typical Instantaneous Forward
Characteristics
100
15
0
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
TJ = 25°C
10
TA = 25°C
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1000
C, JUNCTION CAPACITANCE (pF)
TA = 125°C
10
0.1
0.1
IF(AV), AVERAGE FORWARD CURRENT (A)
TA = 150°C
100
30
50
70
90
110
130
25
IPK/IAV = 5
IPK/IAV = 10
dc
20
15
Square Wave
10
5
0
150
IPK/IAV
= 20
TJ = 150°C
0
2
4
6
8
10
12
14
16
TC, CASE TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating TO−220 FULLPAK
Figure 6. Forward Power Dissipation
http://onsemi.com
3
18
NHPV15S600G, NHPJ15S600G
PACKAGE DIMENSIONS
TO−220 TWO−LEAD
CASE 221B−04
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
Q
F
T
S
DIM
A
B
C
D
F
G
H
J
K
L
Q
R
S
T
U
4
A
1
U
3
H
K
L
R
D
J
G
INCHES
MIN
MAX
0.595
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.190
0.210
0.110
0.130
0.014
0.025
0.500
0.562
0.045
0.060
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
MILLIMETERS
MIN
MAX
15.11
15.75
9.65
10.29
4.06
4.82
0.64
0.89
3.61
4.09
4.83
5.33
2.79
3.30
0.36
0.64
12.70
14.27
1.14
1.52
2.54
3.04
2.04
2.79
1.14
1.39
5.97
6.48
0.000
1.27
TO−220 FULLPAK, 2−LEAD
CASE 221AG
ISSUE O
A
E
B
P
E/2
0.14
M
B A
M
SEATING
PLANE
A
H1
A1
4
Q
D
C
NOTE 3
1 2 3
L
L1
3X
3X
b2
c
b
0.25
M
B A
M
C
A2
e
e1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH
AND GATE PROTRUSIONS. MOLD FLASH AND GATE
PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE TO BE MEASURED AT OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR
PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION
SHALL NOT EXCEED 2.00.
MILLIMETERS
DIM MIN
MAX
A
4.30
4.70
A1
2.50
2.90
A2
2.50
2.70
b
0.54
0.84
b2
1.10
1.40
c
0.49
0.79
D
14.22
15.88
E
9.65
10.67
e
2.54 BSC
e1
5.08 BSC
H1
5.97
6.48
L
12.70
14.73
L1
--2.80
P
3.00
3.40
Q
2.80
3.20
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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NHPV15S600/D