MAC228A Series Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for industrial and consumer applications for full−wave control of AC loads such as appliance controls, heater controls, motor controls, and other power switching applications. www.onsemi.com Features TRIACS 8 AMPERES RMS 200 − 800 VOLTS • Sensitive Gate Triggering in 3 Modes for AC Triggering on • • • • • Sinking Current Sources Four Mode Triggering for Drive Circuits that Source Current All Diffused and Glass−Passivated Junctions for Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance and High Heat Dissipation Center Gate Geometry for Uniform Current Spreading These Devices are Pb−Free and are RoHS Compliant* MT2 MT1 G 4 1 2 3 TO−220 CASE 221A STYLE 4 MARKING DIAGRAM MAC228AxxG AYWW xx A Y WW G = 4, 6, 8, or 10 = Assembly Location (Optional)* = Year = Work Week = Pb−Free Package * The Assembly Location code (A) is optional. In cases where the Assembly Location is stamped on the package the assembly code may be blank. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 8 1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Publication Order Number: MAC228A/D MAC228A Series MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Characteristic Peak Repetitive Off−State Voltage, (Note 1) (TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC228A4 MAC228A6 MAC228A8 MAC228A10 On-State RMS Current, (TC = 80°C) − Full Cycle Sine Wave 50 to 60 Hz Value VDRM, VRRM Unit V 200 400 600 800 IT(RMS) 8.0 A ITSM 80 A Circuit Fusing Considerations, (t = 8.3 ms) I2t 26 A2s Peak Gate Current, (t ≤ 2 ms, TC = 80°C) IGM ±2.0 A Peak Gate Voltage, (t ≤ 2 ms, TC = 80°C) VGM ±10 V Peak Gate Power, (t ≤ 2 ms, TC = 80°C) PGM 20 W Peak Non−Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 110°C) Average Gate Power, (t ≤ 8.3 ms, TC = 80°C) PG(AV) 0.5 W Operating Junction Temperature Range TJ −40 to 110 °C Storage Temperature Range Tstg −40 to 150 °C − 8.0 in lb Mounting Torque Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance − Junction−to−Case RqJC 2.0 °C/W Thermal Resistance − Junction−to−Ambient RqJA 62.5 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit IDRM, IRRM − − − − 10 2.0 mA mA Peak On-State Voltage, (ITM = ±11 A Peak, Pulse Width ≤ 2 ms, Duty Cycle ≤ 2%) VTM − − 1.8 V Gate Trigger Current (Continuous DC), (VD = 12 V, RL = 100 W) MT2(+), G(+); MT2(+), G(−); MT2(−), G(−) MT2(−), G(+) IGT − − − − 5.0 10 Gate Trigger Voltage (Continuous DC), (VD = 12 V, RL = 100 W) MT2(+), G(+); MT2(+), G(−); MT2(−), G(−) MT2(−), G(+) VGT − − − − 2.0 2.5 Gate Non−Trigger Voltage (Continuous DC), (VD = 12 V, TC = 110°C, RL = 100 W) All Four Quadrants VGD 0.2 − − V Holding Current, (VD = 12 Vdc, Initiating Current = ±200 mA, Gate Open) IH − − 15 mA Gate−Controlled Turn−On Time, (VD = Rated VDRM, ITM = 16 A Peak, IG = 30 mA) tgt − 1.5 − ms dv/dt − 25 − V/ms dv/dt(c) − 5.0 − V/ms OFF CHARACTERISTICS Peak Repetitive Blocking Current, (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 110°C ON CHARACTERISTICS mA V DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage, (VD = Rated VDRM, Exponential Waveform, TC = 110°C) Critical Rate of Rise of Commutation Voltage, (VD = Rated VDRM, ITM = 11.3 A, Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 MAC228A Series Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VTM VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current on state IH IRRM at VRRM off state IH Quadrant 3 MainTerminal 2 − VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 Quadrant I (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 (−) MT2 Quadrant III Quadrant 1 MainTerminal 2 + Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. www.onsemi.com 3 + Voltage IDRM at VDRM MAC228A Series 10 a = 30° 104 P(AV), AVERAGE POWER (WATTS) TC , CASE TEMPERATURE (° C) 110 60° 90° 98 120° 180° 92 a a 86 dc a = CONDUCTION ANGLE 80 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 dc a 8.0 a = 180° a a = CONDUCTION ANGLE 6.0 120° 90° TJ ≈ 110°C 60° 4.0 30° 2.0 0 8.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 IT(RMS), RMS ON-STATE CURRENT (AMP) IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 1. RMS Current Derating Figure 2. On−State Power Dissipation ORDERING INFORMATION Device Package Shipping MAC228A4G TO−220 (Pb−Free) 500 Units / Bulk MAC228A6G TO−220 (Pb−Free) 500 Units / Bulk MAC228A6TG TO−220 (Pb−Free) 50 Units / Rail MAC228A8G TO−220 (Pb−Free) 500 Units / Bulk MAC228A8TG TO−220 (Pb−Free) 50 Units / Rail MAC228A10G TO−220 (Pb−Free) 500 Units / Bulk www.onsemi.com 4 8.0 MAC228A Series PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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