MOTOROLA Order this document by MAC228/D SEMICONDUCTOR TECHNICAL DATA MAC228 Series MAC228A Series Triacs Silicon Bidirectional Triode Thyristors . . . designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. • Sensitive Gate Triggering in 3 Modes for AC Triggering on Sinking Current Sources (MAC228 Series) • Four Mode Triggering for Drive Circuits that Source Current (MAC228A Series) • All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal resistance and High Heat Dissipation • Center Gate Geometry for Uniform Current Spreading TRIACs 8 AMPERES RMS 200 thru 800 VOLTS MT2 G MT1 CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Off-State Voltage(1) (TJ = –40 to 110°C 1/2 Sine Wave 50 to 60 Hz, Gate Open) Symbol VDRM MAC228-4, MAC228A4 MAC228-6, MAC228A6 MAC228-8, MAC228A8 MAC228-10, MAC228A10 On-State RMS Current (TC = 80°C) Full Cycle Sine Wave 50 to 60 Hz Peak Non-repetitive Surge Current (One Full Cycle 60 Hz, TJ = 110°C) Circuit Fusing (t = 8.3 ms) p 2 µs) Peak Gate Voltage (t p 2 µs) Peak Gate Power (t p 2 µs) Peak Gate Current (t Value Volts 200 400 600 800 IT(RMS) 8 Amps ITSM 80 Amps I2t 26 A2s IGM ±2 Amps VGM ±10 Volts PGM 20 Watts 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data Motorola, Inc. 1995 Unit (continued) 1 MAXIMUM RATINGS — continued Rating Average Gate Power (TC = 80°C, t p 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Symbol Value Unit PG(AV) 0.5 Watts TJ –40 to 110 °C Tstg –40 to 150 °C 8 in. lb. Mounting Torque THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 2.2 °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.) Characteristic Peak Blocking Current (VD = Rated VDRM) Symbol Min Typ Max Unit — — — — 10 2 µA mA — — 1.8 Volts IDRM TJ = 25°C TJ = 110°C Peak On-State Voltage (ITM = 11 A Peak, Pulse Width VTM p 2 ms, Duty Cycle p 2%) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) MT2(–), G(+) “A” Suffix Only IGT Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) MT2(–), G(+) “A” Suffix Only (VD = Rated VDRM, TC = 110°C, RL = 10 k) MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) MT2(–), G(+) “A” Suffix Only VGT mA — — — — 5 10 Volts — — — — 2 2.5 0.2 0.2 — — — — Holding Current (VD = 12 Vdc, ITM = 200 mA, Gate Open) IH — — 15 mA Gate-Controlled Turn-On Time (VD = Rated VDRM, ITM = 16 A Peak, IG = 30 mA) tgt — 1.5 — µs dv/dt — 25 — V/µs dv/dt(c) — 5 — V/µs Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, TC = 110°C) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 11.3 A, Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C) FIGURE 1 – RMS CURRENT DERATING FIGURE 2 – ON-STATE POWER DISSIPATION 10 α = 30° 104 60° 90° 120° 120° 180° 98 α 92 α 86 α = CONDUCTION ANGLE dc 80 dc α = 180° α 8.0 120° α 6.0 90° α = CONDUCTION ANGLE TJ ≈ 110°C 4.0 60° 30° 2.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 IT(RMS), RMS ON-STATE CURRENT (AMP) 2 P(AV), AVERAGE POWER (WATTS) TC, CASE TEMPERATURE ( °C) 110 7.0 8.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 IT(RMS), RMS ON-STATE CURRENT (AMP) Motorola Thyristor Device Data PACKAGE DIMENSIONS B –T– F T SEATING PLANE C S 4 Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. A 1 2 3 STYLE 4: PIN 1. 2. 3. 4. H K U Z L V R G D J N MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.055 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.39 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 CASE 221A-04 (TO–220AB) Motorola Thyristor Device Data 3 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *MAC228/D* MAC228/D