NUF8410MN 8-Channel EMI Filter with Integrated ESD Protection The NUF8410MN is an eight−channel (C−R−C) Pi−style EMI filter array with integrated ESD protection. Its typical component values of R = 100 and C = 8.5 pF deliver a cutoff frequency of 250 MHz and stop band attenuation greater than −20 dB from 800 MHz to 3.0 GHz. This performance makes the part ideal for parallel interfaces with data rates up to 167 Mbps in applications where wireless interference must be minimized. The specified attenuation range is very effective in minimizing interference from 2G/3G, GPS, Bluetooth® and WLAN signals. The NUF8410MN is available in the low−profile 16−lead 1.6 mm x 4.0 mm DFN16 surface mount package. Features/Benefits • ±8.0 kV ESD Protection on each channel (IEC61000−4−2 Level 4, Contact Discharge) • R/C Values of 100 and 8.5 pF deliver Exceptional S21 • • Performance Characteristics of 250 MHz f3dB and −20 dB Stop Band Attenuation from 800 MHz to 3.0 GHz Integrated EMI/ESD System Solution in DFN Package Offers Exceptional Cost, System Reliability and Space Savings This is a Pb−Free Device Applications • EMI Filtering for LCD and Camera Data Lines • EMI Filtering and Protection for I/O Ports and Keypads http://onsemi.com MARKING DIAGRAM 840 AYWG G 16 DFN16 CASE 506AC 1 840 = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (*Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NUF8410MNT4G DFN16 (Pb−Free) 4000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 0 −5 −10 Filter + ESDn Cd = 8.5 pF Cd = 8.5 pF Filter + ESDn S21 (dB) −15 R = 100 −20 −25 −30 −35 See Table 1 for pin description −40 −45 1.0E+6 1.0E+7 1.0E+8 1.0E+9 1.0E+10 FREQUENCY (Hz) Figure 1. Electrical Schematic © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 2 Figure 2. Insertion Loss Characteristic 1 Publication Order Number: NUF84100MN/D NUF8410MN 1 2 3 4 5 6 7 8 10 9 GND 16 15 14 13 12 11 (Bottom View) Figure 3. Pin Diagram Table 1. FUNCTIONAL PIN DESCRIPTION Filter Device Pins Description Filter 1 1 & 16 Filter + ESD Channel 1 Filter 2 2 & 15 Filter + ESD Channel 2 Filter 3 3 & 14 Filter + ESD Channel 3 Filter 4 4 & 13 Filter + ESD Channel 4 Filter 5 5 & 12 Filter + ESD Channel 5 Filter 6 6 & 11 Filter + ESD Channel 6 Filter 7 7 & 10 Filter + ESD Channel 7 Filter 8 8&9 Filter + ESD Channel 8 Ground Pad GND Ground MAXIMUM RATINGS Parameter Symbol Value ESD Discharge IEC61000−4−2 Contact Discharge VPP 8.0 Operating Temperature Range TOP −40 to 85 °C Storage Temperature Range TSTG −55 to 150 °C TL 260 °C Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) Unit kV Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Maximum Reverse Working Voltage Breakdown Voltage Symbol Test Conditions Min Typ Max Unit 5.0 V 8.0 V 100 nA 100 115 VRWM VBR IR = 1.0 mA Leakage Current IR VRWM = 3.3 V Resistance RA IR = 20 mA Diode Capacitance Cd VR = 2.5 V, f = 1.0 MHz 8.5 11 pF Line Capacitance CL VR = 2.5 V, f = 1.0 MHz 17 22 pF 3 dB Cut−Off Frequency (Note 1) f3dB Above this frequency, appreciable attenuation occurs 250 MHz 6 dB Cut−Off Frequency f6dB Above this frequency, appreciable attenuation occurs 395 MHz 1. 50 source and 50 load termination. http://onsemi.com 2 6.0 85 7.0 NUF8410MN TYPICAL PERFORMANCE CURVES (TA= 25°C unless otherwise specified) 0 −5 −10 S21 (dB) −15 −20 −25 −30 −35 −40 −45 1.0E+6 1.0E+7 1.0E+8 1.0E+9 1.0E+10 FREQUENCY (Hz) 1.6 110 1.4 108 106 1.2 RESISTANCE () NORMALIZED CAPACITANCE Figure 4. Insertion Loss Characteristic 1.0 0.8 0.6 0.4 102 100 98 96 94 0.2 0 104 92 0 1.0 2.0 3.0 4.0 90 −40 5.0 −20 0 20 40 60 80 REVERSE VOLTAGE (V) TEMPERATURE (°C) Figure 5. Typical Capacitance Figure 6. Typical Resistance over Temperature http://onsemi.com 3 NUF8410MN Theory of Operation approximation of a square wave, shown below in Equations 1 and 2 in the Fourier series approximation. From this it can be seen that a square wave consists of odd order harmonics and to fully construct a square wave n must go to infinity. However, to retain an acceptable portion of the waveform, the first two terms are generally sufficient. These two terms contain about 85% of the signal amplitude and allow a reasonable square wave to be reconstructed. Therefore, to reasonably pass a square wave of frequency x the minimum filter bandwidth necessary is 3x. All ON Semiconductor EMI filters are rated according to this principle. Attempting to violate this principle will result in significant rounding of the waveform and cause problems in transmitting the correct data. For example, take the filter with the response shown in Figure 7 and apply three different data waveforms. To calculate these three different frequencies, the 3 dB, 6 dB, and 9 dB bandwidths will be used. The NUF8410MN combines ESD protection and EMI filtering conveniently into a small package for today’s size constrained applications. The capacitance inherent to a typical protection diode is utilized to provide the capacitance value necessary to create the desired frequency response based upon the series resistance in the filter. By combining this functionality into one device, a large number of discrete components are integrated into one small package saving valuable board space and reducing BOM count and cost in the application. Application Example The accepted practice for specifying bandwidth in a filter is to use the 3 dB cutoff frequency. Utilizing points such as the 6 dB or 9 dB cutoff frequencies results in signal degradation in an application. This can be illustrated in an application example. A typical application would include EMI filtering of data lines in a camera or display interface. In such an example it is important to first understand the signal and its spectral content. By understanding these things, an appropriate filter can be selected for the desired application. A typical data signal is pattern of 1’s and 0’s transmitted over a line in a form similar to a square wave. The maximum frequency of such a signal would be the pattern 1-0-1-0 such that for a signal with a data rate of 100 Mbps, the maximum frequency component would be 50 MHz. The next item to consider is the spectral content of the signal, which can be understood with the Fourier series Equation 1: a 1 sin((2n * 1) t) x(t) + 1 ) 2 0 2 n + 1 2n * 1 ƪ ƫ (eq. 1) Equation 2 (simplified form of Equation 1): ƪ ƫ sin( 0t) sin(3 0t) sin(5 0t) ) ) ) AAA (eq. 2) x(t) + 1 ) 2 1 3 5 2 −3 dB −6 dB Magnitude (dB) −9 dB f1 f2 100k 1M f3 100M 10M 1G 10G Frequency (Hz) Figure 7. Filter Bandwidth From the above paragraphs it is shown that the maximum supported frequency of a waveform that can be passed through the filter can be found by dividing the bandwidth by a factor of three (to obtain the corresponding data rate multiply the result by two). The following table gives the bandwidth values and the corresponding maximum supported frequencies and the third harmonic frequencies. http://onsemi.com 4 NUF8410MN with a frequency of 66.67 MHz is input to this same filter, the third harmonic term is significantly attenuated. This serves to round the signal edges and skew the waveform, as is shown in Figure 8b. In the case that a 100 MHz signal is input to this filter, the third harmonic term is attenuated even further and results in even more rounding of the signal edges as is shown in Figure 8c. The result is the degradation of the data being transmitted making the digital data (1’s and 0’s) more difficult to discern. This does not include effects of other components such as interconnect and other path losses which could further serve to degrade the signal integrity. While some filter products may specify the 6 dB or 9 dB bandwidths, actually using these to calculate supported frequencies (and corresponding data rates) results in significant signal degradation. To ensure the best signal integrity possible, it is best to use the 3 dB bandwidth to calculate the achievable data rate. Table 2. Frequency Chart Bandwidth Maximum Supported Frequency Third Harmonic Frequency 3 dB – 100 MHz 33.33 MHz (f1) 100 MHz 6 dB – 200 MHz 66.67 MHz (f2) 200 MHz 9 dB – 300 MHz 100 MHz (f3) 300 MHz Considering that 85% of the amplitude of the square is in the first two terms of the Fourier series approximation most of the signal content is at the fundamental (maximum supported) frequency and the third harmonic frequency. If a signal with a frequency of 33.33 MHz is input to this filter, the first two terms are sufficiently passed such that the signal is only mildly affected, as is shown in Figure 8a. If a signal Input Waveform Output Waveform a) Frequency = f1 Input Waveform Output Waveform b) Frequency = f2 Input Waveform c) Frequency = f3 Output Waveform Figure 8. Input and Output Waveforms of Filter http://onsemi.com 5 NUF8410MN PACKAGE DIMENSIONS DFN16, 4x1.6, 0.5P CASE 506AC ISSUE D A D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION b APPLIES TO TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. B PIN ONE REFERENCE 2X E 0.15 C 2X (A3) TOP VIEW 0.15 C L (A3) 0.10 C L1 A 16X 16X L DETAIL A SEATING PLANE 0.08 C A1 SIDE VIEW 1 OPTIONAL CONSTRUCTION C e 2X 0.25 x 0.40 mm TEST PAD SIZE 8 4.10 0.50 PITCH E2 16X K 16 MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.18 0.30 4.00 BSC 3.10 3.30 1.60 BSC 0.30 0.50 0.50 BSC 0.20 −−− 0.20 0.40 0.00 0.15 RECOMMENDED SOLDERING FOOTPRINT* D2 DETAIL A DIM A A1 A3 b D D2 E E2 e K L L1 9 16X b NOTE 3 BOTTOM VIEW 0.10 C A B 0.05 C 0.50 1.91 16X 0.28 16X 0.51 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Bluetooth is a registered trademark of Bluetooth SIG. 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