MC74VHCT50A Noninverting Buffer / CMOS Logic Level Shifter with LSTTL−Compatible Inputs The MC74VHCT50A is a hex noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffered output which provides high noise immunity and stable output. The device input is compatible with TTL−type input thresholds and the output has a full 5 V CMOS level output swing. The input protection circuitry on this device allows overvoltage tolerance on the input, allowing the device to be used as a logic−level translator from 3.0 V CMOS logic to 5.0 V CMOS Logic or from 1.8 V CMOS logic to 3.0 V CMOS Logic while operating at the high−voltage power supply. The MC74VHCT50A input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHCT50A to be used to interface 5 V circuits to 3 V circuits. The output structures also provide protection when VCC = 0 V. These input and output structures help prevent device destruction caused by supply voltage − input/output voltage mismatch, battery backup, hot insertion, etc. http://onsemi.com 14−LEAD SOIC D SUFFIX CASE 751A 14−LEAD TSSOP DT SUFFIX CASE 948G PIN CONNECTION AND MARKING DIAGRAM (Top View) VCC 14 A6 13 Y6 12 A5 11 Y5 10 A4 9 Y4 8 1 2 3 4 5 6 7 A1 Y1 A2 Y2 A3 Y3 GND Features • • • • • • • High Speed: tPD = 3.5 ns (Typ) at VCC = 5 V Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V CMOS−Compatible Outputs: VOH > 0.8 VCC; VOL < 0.1 VCC @Load Power Down Protection Provided on Inputs and Outputs NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant LOGIC DIAGRAM A1 A2 A3 1 3 5 2 4 6 A5 A6 9 8 11 10 13 12 Y1 A1 1 A2 1 A3 1 A4 1 A5 1 A6 1 Y2 Y3 Y4 A Input Y Output L H L H ORDERING INFORMATION Y1 See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Y2 Y3 Y4 Y5 Y5 Y6 Y6 © Semiconductor Components Industries, LLC, 2014 March, 2014 − Rev. 9 FUNCTION TABLE LOGIC SYMBOL Y=A A4 For detailed package marking information, see the Marking Diagram section on page 4 of this data sheet. 1 Publication Order Number: MC74VHCT50A/D MC74VHCT50A MAXIMUM RATINGS Symbol Parameter Value Unit *0.5 to )7.0 V *0.5 v VI v )7.0 V *0.5 v VO v )7.0 V VCC DC Supply Voltage VIN DC Input Voltage VOUT DC Output Voltage IIK DC Input Diode Current *20 mA IOK DC Output Diode Current $20 mA IO DC Output Source/Sink Current $25 mA ICC DC Supply Current per Supply Pin $50 mA IGND DC Ground Current per Ground Pin $50 mA TSTG Storage Temperature Range *65 to )150 _C TL Lead Temperature, 1 mm from Case for 10 Seconds 260 _C TJ Junction Temperature under Bias )150 _C qJA Thermal Resistance PD Power Dissipation in Still Air VESD ESD Withstand Voltage Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) > 2000 > 200 2000 V ILatch−Up Latch−Up Performance Above VCC and Below GND at 85_C (Note 5) $300 mA Output in HIGH or LOW State (Note 1) SOIC TSSOP 125 170 SOIC TSSOP 500 450 _C/W mW Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Characteristics Symbol Min Max Unit DC Supply Voltage VCC 2.0 5.5 V DC Input Voltage VIN 0.0 5.5 V VOUT 0.0 0.0 5.5 VCC V TA −55 +125 °C tr , tf 0 0 100 20 ns/V DC Output Voltage VCC = 0 High or Low State Operating Temperature Range Input Rise and Fall Time VCC = 3.3 V ± 0.3 V VCC = 5.0 V ± 0.5 V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. TEST POINT 3.0V A OUTPUT 50% DEVICE UNDER TEST GND tPLH tPHL CL* VOH Y 50% VCC VOL *Includes all probe and jig capacitance Figure 1. Switching Waveforms Figure 2. Test Circuit http://onsemi.com 2 MC74VHCT50A DC ELECTRICAL CHARACTERISTICS VCC Symbol Parameter Test Conditions Min 1.2 2.0 2.0 VIH Minimum High−Level Input Voltage 3.0 4.5 5.5 VIL Maximum Low−Level Input Voltage 3.0 4.5 5.5 VOH Minimum High−Level Output Voltage VIN = VIH or VIL VOL Maximum Low−Level Output Voltage VIN = VIH or VIL TA = 25°C (V) Typ TA ≤ 85°C Max Min 1.2 2.0 2.0 0.53 0.8 0.8 VIN = VIH or VIL IOH = −50 mA 3.0 4.5 2.9 4.4 VIN = VIH or VIL IOH = −4 mA IOH = −8 mA 3.0 4.5 2.58 3.94 VIN = VIH or VIL IOL = 50 mA 3.0 4.5 VIN = VIH or VIL IOH = −4 mA IOL = 8 mA Max Max 1.2 2.0 2.0 Unit V 0.53 0.8 0.8 3.0 4.5 0.0 0.0 TA ≤ 125°C Min 0.53 0.8 0.8 2.9 4.4 2.9 4.4 2.48 3.80 2.34 3.66 V V V 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 0.36 0.36 0.44 0.44 0.52 0.52 V V IIN Maximum Input Leakage Current VIN = 5.5 V or GND 0 to 5.5 ±0.1 ±1.0 ±1.0 μA ICC Maximum Quiescent Supply Current VIN = VCC or GND 5.5 2.0 20 40 μA ICCT Quiescent Supply Current Input: VIN = 3.4 V 5.5 1.35 1.50 1.65 mA IOFF Output Leakage Current VOUT = 5.5 V 0.0 0.5 5.0 10 μA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS (Cload = 50 pF, Input tr = tf = 3.0ns) TA = 25°C Symbol tPLH, tPHL CIN Parameter Maximum Propogation Delay, Input A to Y Min Test Conditions TA ≤ 85°C Typ Max Min Max 1.0 1.0 9.5 13.0 TA ≤ 125°C Min Max ns VCC = 3.3 ± 0.3 V CL = 15 pF CL = 50 pF 5.5 8.0 7.9 11.4 VCC = 5.0 ± 0.5 V CL = 15 pF CL = 50 pF 6.2 7.0 7.5 8.5 8.5 9.5 9.5 10.5 5 10 10 10 Maximum Input Capacitance Unit pF Typical @ 25°C, VCC = 5.0 V 15 CPD Power Dissipation Capacitance (Note 6) pF 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50pF, VCC = 5.0V) TA = 25°C Symbol Characteristic Typ Max Unit VOLP Quiet Output Maximum Dynamic VOL 0.8 1.0 V VOLV Quiet Output Minimum Dynamic VOL −0.8 −1.0 V VIHD Minimum High Level Dynamic Input Voltage 2.0 V VILD Maximum Low Level Dynamic Input Voltage 0.8 V http://onsemi.com 3 MC74VHCT50A ORDERING INFORMATION Package Shipping† MC74VHCT50ADR2G SOIC−14 (Pb−Free) 2500 / Tape & Reel MC74VHCT50ADTR2G TSSOP−14 (Pb−Free) 2500 / Tape & Reel Device NLVVHCT50ADTR2G* †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. MARKING DIAGRAMS (Top View) 14 13 12 11 10 9 14 13 12 11 10 8 2 3 4 8 6 7 VHCT 50A ALYWG G VHCT50AG AWLYWW* 1 9 5 6 7 1 14−LEAD SOIC D SUFFIX CASE 751A 2 3 4 5 14−LEAD TSSOP DT SUFFIX CASE 948G A WL, L Y WW, W G or G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *See Applications Note #AND8004/D for date code and traceability information. http://onsemi.com 4 MC74VHCT50A PACKAGE DIMENSIONS SOIC−14 NB D SUFFIX CASE 751A−03 ISSUE K D A B 14 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. A3 E H L 1 0.25 M DETAIL A 7 B 13X M b 0.25 M C A S B S DETAIL A h A X 45 _ M A1 e DIM A A1 A3 b D E e H h L M C SEATING PLANE SOLDERING FOOTPRINT* 6.50 14X 1.18 1 1.27 PITCH 14X 0.58 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.19 0.25 0.35 0.49 8.55 8.75 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ INCHES MIN MAX 0.054 0.068 0.004 0.010 0.008 0.010 0.014 0.019 0.337 0.344 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.019 0.016 0.049 0_ 7_ MC74VHCT50A PACKAGE DIMENSIONS TSSOP−14 CASE 948G ISSUE B 14X K REF 0.10 (0.004) 0.15 (0.006) T U M T U V S S N 2X 14 L/2 0.25 (0.010) 8 M B −U− L PIN 1 IDENT. N F 7 1 0.15 (0.006) T U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. S S DETAIL E K A −V− ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ K1 J J1 SECTION N−N −W− C 0.10 (0.004) −T− SEATING PLANE D H G DETAIL E DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.50 0.60 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.020 0.024 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ SOLDERING FOOTPRINT 7.06 1 0.65 PITCH 14X 0.36 14X 1.26 DIMENSIONS: MILLIMETERS ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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