MC74VHCT32A Product Preview Quad 2-Input OR Gate / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHCT32A is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The device input is compatible with TTL–type input thresholds and the output has a full 5V CMOS level output swing. The input protection circuitry on this device allows overvoltage tolerance on the input, allowing the device to be used as a logic–level translator from 3.0V CMOS logic to 5.0V CMOS Logic or from 1.8V CMOS logic to 3.0V CMOS Logic while operating at the high–voltage power supply. The MC74VHCT32A input structure provides protection when voltages up to 7V are applied, regardless of the supply voltage. This allows the MC74VHCT32A to be used to interface 5V circuits to 3V circuits. The output structures also provide protection when VCC = 0V. These input and output structures help prevent device destruction caused by supply voltage – input/output voltage mismatch, battery backup, hot insertion, etc. • • • • • • • • • • High Speed: tPD = 3.8ns (Typ) at VCC = 5V Low Power Dissipation: ICC = 2µA (Max) at TA = 25°C TTL–Compatible Inputs: VIL = 0.8V; VIH = 2.0V Power Down Protection Provided on Inputs Balanced Propagation Delays Designed for 2V to 5.5V Operating Range Low Noise: VOLP = 0.8V (Max) Pin and Function Compatible with Other Standard Logic Families Latchup Performance Exceeds 300mA ESD Performance: HBM > 2000V; Machine Model > 200V LOGIC DIAGRAM A1 B1 A2 B2 A3 B3 A4 B4 1 2 3 Y1 4 5 6 Y2 8 October, 1999 – Rev. 0.0 14–LEAD SOIC EIAJ M SUFFIX CASE 965 PIN CONNECTION AND MARKING DIAGRAM (Top View) VCC 14 B4 13 A4 12 Y4 11 B3 10 A3 9 Y3 8 1 2 3 4 5 6 7 A1 B1 Y1 A2 B2 Y2 GND For detailed package marking information, see the Marking Diagram section on page 4 of this data sheet. FUNCTION TABLE Inputs Output A B Y L L H H L H L H L H H H ORDERING INFORMATION Y3 Device 11 MC74VHCT32AD Y4 This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. Semiconductor Components Industries, LLC, 1999 14–LEAD TSSOP DT SUFFIX CASE 948G ) 12 13 14–LEAD SOIC D SUFFIX CASE 751A Y=A B 9 10 http://onsemi.com 1 Package Shipping SOIC 55 Units/Rail MC74VHCT32ADT TSSOP 96 Units/Rail MC74VHCT32AM SOIC EIAJ 50 Units/Rail Publication Order Number: MC74VHCT32A/D MC74VHCT32A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS* Symbol Value Unit DC Supply Voltage – 0.5 to + 7.0 V Vin DC Input Voltage – 0.5 to + 7.0 V Vout DC Output Voltage – 0.5 to + 7.0 – 0.5 to VCC + 0.5 V VCC Parameter VCC = 0 High or Low State IIK Input Diode Current – 20 mA IOK Output Diode Current (VOUT < GND; VOUT > VCC) ± 20 mA Iout DC Output Current, per Pin ± 25 mA ICC DC Supply Current, VCC and GND Pins ± 50 mA PD Power Dissipation in Still Air, 500 450 mW Tstg Storage Temperature – 65 to + 150 _C SOIC Packages† TSSOP Package† This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND (Vin or Vout) VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V CC ). Unused outputs must be left open. v v * Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. †Derating — SOIC Packages: – 7 mW/_C from 65_ to 125_C TSSOP Package: – 6.1 mW/_C from 65_ to 125_C RECOMMENDED OPERATING CONDITIONS Characteristics DC Supply Voltage DC Input Voltage DC Output Voltage VCC = 0 High or Low State Operating Temperature Range Input Rise and Fall Time VCC = 3.3V ± 0.3V VCC = 5.0V ± 0.5V Symbol Min Max Unit VCC 2.0 5.5 V VIN 0.0 5.5 V VOUT 0.0 0.0 5.5 VCC V TA –55 +85 °C tr , tf 0 0 100 20 ns/V NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50pF, VCC = 5.0V) TA = 25°C Symbol Characteristic Typ Max Unit VOLP Quiet Output Maximum Dynamic VOL 0.3 0.8 V VOLV Quiet Output Minimum Dynamic VOL – 0.3 – 0.8 V VIHD Minimum High Level Dynamic Input Voltage 3.5 V VILD Maximum Low Level Dynamic Input Voltage 1.5 V http://onsemi.com 2 MC74VHCT32A DC ELECTRICAL CHARACTERISTICS VCC Symbol Parameter Test Conditions (V) Min 1.2 2.0 2.0 VIH Minimum High–Level Input Voltage 3.0 4.5 5.5 VIL Maximum Low–Level Input Voltage 3.0 4.5 5.5 VOH Minimum High–Level Output Voltage VIN = VIH or VIL VOL Maximum Low–Level Output Voltage VIN = VIH or VIL TA ≤ 85°C TA = 25°C Typ Max Min 3.0 4.5 2.9 4.4 VIN = VIH or VIL IOH = –4mA IOH = –8mA 3.0 4.5 2.58 3.94 VIN = VIH or VIL IOL = 50µA 3.0 4.5 VIN = VIH or VIL IOL = 4mA IOL = 8mA Max 1.2 2.0 2.0 Min 0.53 0.8 0.8 3.0 4.5 Max 1.2 2.0 2.0 0.53 0.8 0.8 VIN = VIH or VIL IOH = –50µA TA ≤ 125°C V 0.53 0.8 0.8 2.9 4.4 2.9 4.4 2.48 3.80 2.34 3.66 Unit V V V 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 0.36 0.36 0.44 0.44 0.52 0.52 V V IIN Maximum Input Leakage Current VIN = 5.5V or GND 0 to 5.5 ±0.1 ±1.0 ±1.0 µA ICC Maximum Quiescent Supply Current VIN = VCC or GND 5.5 2.0 20 40 µA ICCT Quiescent Supply Current Input: VIN = 3.4V 5.5 1.35 1.50 1.65 mA IOPD Output Leakage Current VOUT = 5.5V 0.0 0.5 5.0 10 µA ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns) TA = 25°C Symbol tPLH, tPHL Cin Parameter Maximum Propagation Delay, A or B to Y Test Conditions Min TA = – 40 to 85°C Typ Max Min Max Unit ns VCC = 3.3 ± 0.3V CL = 15pF CL = 50pF 5.5 8.0 7.9 11.4 1.0 1.0 9.5 13.0 VCC = 5.0 ± 0.5V CL = 15pF CL = 50pF 3.8 5.3 5.5 7.5 1.0 1.0 6.5 8.5 4 10 Maximum Input Capacitance 10 pF Typical @ 25°C, VCC = 5.0V CPD Power Dissipation Capacitance (Note 1.) pF 22 1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 4 (per gate). CPD is used to determine the no–load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. TEST POINT 3V A OUTPUT 1.5V DEVICE UNDER TEST GND tPLH Y tPHL 1.5V CL* VOH VOL *Includes all probe and jig capacitance Figure 1. Switching Waveforms Figure 2. Test Circuit http://onsemi.com 3 MC74VHCT32A MARKING DIAGRAMS (Top View) 14 13 12 11 10 9 14 8 13 12 3 4 9 8 5 6 7 32A AWLYWW* 2 10 VHCT VHCT32A 1 11 ALYW* 5 6 7 1 2 14–LEAD SOIC D SUFFIX CASE 751A 3 4 14–LEAD TSSOP DT SUFFIX CASE 948G 14 13 12 11 10 9 8 6 7 VHCT32A AWLYWW* 1 2 3 4 5 14–LEAD SOIC EIAJ M SUFFIX CASE 965 *See Applications Note #AND8004/D for date code and traceability information. PACKAGE DIMENSIONS D SUFFIX PLASTIC SOIC PACKAGE CASE 751A–03 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. –A– 14 8 –B– 1 P 7 PL 0.25 (0.010) 7 G 0.25 (0.010) M T B F J M K D 14 PL M R X 45° C SEATING PLANE B M S A S http://onsemi.com 4 DIM A B C D F G J K M P R MILLIMETERS MIN MAX 8.75 8.55 4.00 3.80 1.75 1.35 0.49 0.35 1.25 0.40 1.27 BSC 0.25 0.19 0.25 0.10 7° 0° 6.20 5.80 0.50 0.25 INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 7° 0° 0.228 0.244 0.010 0.019 MC74VHCT32A PACKAGE DIMENSIONS DT SUFFIX PLASTIC TSSOP PACKAGE CASE 948G–01 ISSUE O 14X K REF 0.10 (0.004) 0.15 (0.006) T U M T U V S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE –W–. S S N 2X 14 L/2 0.25 (0.010) 8 M B –U– L PIN 1 IDENT. F 7 1 0.15 (0.006) T U N S DETAIL E K A –V– ÇÇÇ ÉÉ ÇÇÇ ÉÉ K1 J J1 SECTION N–N –W– C 0.10 (0.004) –T– SEATING PLANE D G H DETAIL E http://onsemi.com 5 DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 ––– 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.50 0.60 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 ––– 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.020 0.024 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ MC74VHCT32A PACKAGE DIMENSIONS M SUFFIX PLASTIC SOIC EIAJ PACKAGE CASE 965–01 ISSUE O 14 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE MEASURED AT THE PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 5. THE LEAD WIDTH DIMENSION (b) DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD TO BE 0.46 ( 0.018). LE 8 Q1 E HE L 7 1 M_ DETAIL P Z D VIEW P A e c A1 b 0.13 (0.005) M 0.10 (0.004) http://onsemi.com 6 DIM A A1 b c D E e HE 0.50 LE M Q1 Z MILLIMETERS MIN MAX ––– 2.05 0.05 0.20 0.35 0.50 0.18 0.27 9.90 10.50 5.10 5.45 1.27 BSC 7.40 8.20 0.50 0.85 1.10 1.50 10 _ 0_ 0.70 0.90 ––– 1.42 INCHES MIN MAX ––– 0.081 0.002 0.008 0.014 0.020 0.007 0.011 0.390 0.413 0.201 0.215 0.050 BSC 0.291 0.323 0.020 0.033 0.043 0.059 10 _ 0_ 0.028 0.035 ––– 0.056 MC74VHCT32A Notes http://onsemi.com 7 MC74VHCT32A ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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