NCV952 D

NCV952
Operational Amplifier, Low
Power, Rail-to-Rail
The NCV952 is a dual, low power, operational amplifier fully
specified for 3 V, 5 V and 24 V operation. Rail−to−rail output
performance over the supply range of 2.7 V to 26 V provides increased
dynamic range in single−supply and split−supply applications. This
device offers a gain−bandwidth of 3.5 MHz and a slew rate of 1 V/ms,
with only 0.7 mA of quiescent current. The NCV952 is available in a
space saving 8−pin TSSOP8 package.
www.onsemi.com
Features
•
•
•
•
•
•
•
•
Rail−to−rail Input Common Mode Voltage Range
Rail−to−rail Output Swing
Wide Supply Range: 2.7 V to 26 V
Excellent Gain−bandwidth and Speed: 3.5 MHz at 1 V/ms with 3 V
Supply
Low Quiescent Current: 0.7 mA at VS = 3 V per Channel
PSRR: 105 dB Typical
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−free, Halogen Free/BFR Free and are RoHS
Compliant
TSSOP−8
CASE 948S
MARKING DIAGRAM
V52
YWW
AG
G
V52
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Typical Applications
•
•
•
•
•
•
•
•
•
•
PIN CONNECTIONS
General Purpose Operational Amplifier
Active Filters
Signal Conditioning Amplifiers/ADC Buffers
Set−top Boxes
Laptop/Notebook Computers
Transformer/Line Drivers
Personal Entertainment Systems
Cell Phones and Other Portable Communications
Portable Headphone Speaker Drivers
Instrumentation and Sensoring
OUT1
1
8
VDD
IN−1
2
7
OUT2
IN+1
3
6
IN−2
VSS
4
5
IN+2
ORDERING INFORMATION
Device
Package
Shipping†
NCV952DTBR2G
TSSOP−8
(Pb−Free)
2500 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
July, 2015 − Rev. 3
1
Publication Order Number:
NCV952/D
NCV952
Table 1. PIN DESCRIPTION
Pin
Name
Type
Description
1
OUT1
Output
2
IN−1
Input
Inverting input of opamp 1
3
IN+1
Input
Non−inverting input of opamp 1
4
VSS
Power
5
IN+2
Input
Non−inverting input of opamp 2
6
IN−2
Input
Inverting input of opamp 2
7
OUT2
Output
Output of opamp 2
8
VDD
Power
Positive supply. A bypass capacitor of 0.1 mF to ground is recommended as close as possible to this pin.
Output of opamp 1
Negative supply. A bypass capacitor of 0.1 mF to ground is recommended as close as possible to this pin.
Table 2. ABSOLUTE MAXIMUM RATINGS (Over operating free−air temperature, unless otherwise stated)
Parameter
Symbol
Limit
Unit
VS
28
V
Input Voltage
VIN
VSS – 0.3 to VDD + 0.3
V
Differential Input Voltage (Note 1)
VID
±1
V
Storage Temperature
TSTG
−65 to +150
°C
Junction Temperature
TJ
+150
°C
Human Body Model
HBM
2500
V
Machine Model
MM
300
V
Supply Voltage (VDD− VSS)
INPUT AND OUTPUT PINS
TEMPERATURE
ESD RATINGS (Note 2)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Input differential voltage is the non−inverting pin with respect to the inverting pin. If VID > ±1 V, the maximum input current must not exceed
±1 mA; an input series resistor must be used to limit the input current.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (JEDEC standard: JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (JEDEC standard: JESD22−A115)
Table 3. THERMAL INFORMATION (Note 3)
Parameter
Symbol
Value
Unit
Junction to Ambient (Note 4)
qJA
140
°C/W
Junction to Case Top (Note 4)
yJT
34
°C/W
3. Short−circuits can cause excessive heating and destructive dissipation. Values are typical.
4. Multilayer board, 1 oz. copper, 400 mm2 copper area, both junctions heated equally.
Table 4. RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Limit
Unit
Operating Supply Voltage
VS
2.7 to 26
V
Specified Operating Range
TA
−40 to +125
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
www.onsemi.com
2
NCV952
Table 5. ELECTRICAL CHARACTERISTICS AT VS = 3.0 V
At TA = +25°C, RL = 10 kW connected to mid−supply, VCM = VOUT = midsupply, unless otherwise noted.
Boldface limits apply over the specified temperature range, TA = –40°C to +125°C, guaranteed by characterization and/or design.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
VOS
0.6
6.0
mV
Offset Voltage Drift
DV/DT
2.0
Input Bias Current
IIB
55
INPUT CHARACTERISTICS
Offset Voltage
8.0
Input Offset Current
Input Common Mode Range
Common Mode Rejection Ratio
IOS
1.0
VCM
VSS – 0.2
mV
mV/°C
100
nA
200
nA
30
nA
80
nA
VDD + 0.2
V
CMRR
VSS + 0.15 < VCM < VDD − 0.15
50
80
dB
Output Voltage High
VOH
RL = 600 W
VDD − 0.2
VDD − 0.08
V
Output Voltage Low
VOL
RL = 600 W
Short Circuit Current
ISC
OUTPUT CHARACTERISTICS
VSS + 0.10
VSS + 0.25
10
V
mA
NOISE PERFORMANCE
eN
f = 1 kHz, no load
25
nV/√Hz
Open Loop Voltage Gain
AVOL
VO = 2 Vpp, RL = 600 W
88
dB
Gain Bandwidth Product
GBWP
RL = 2 kW
3.5
MHz
Gain Margin
AM
RL = 600 W, CL = 100 pF
8
dB
Phase Margin
yM
RL = 600 W, CL = 100 pF
56
°
Slew Rate
SR
RL = 10 kW
1.0
V/mS
THD+N
VOUT = 2 Vpp, fIN = 10 kHz,
AV = 2, RL = 10 kW
0.008
%
PSRR
VS = 2.7 V to 26 V
105
dB
IDD
No load, VCM = VS/2,
per channel
Voltage Noise Density
DYNAMIC PERFORMANCE
Total Harmonic Distortion + Noise
POWER SUPPLY
Power Supply Rejection Ratio
Quiescent Current
60
0.7
1.3
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
NCV952
Table 6. ELECTRICAL CHARACTERISTICS AT VS = 5.0 V
At TA = +25°C, RL = 10 kW connected to mid−supply, VCM = VOUT = midsupply, unless otherwise noted.
Boldface limits apply over the specified temperature range, TA = –40°C to +125°C, guaranteed by characterization and/or design.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
VOS
0.6
6.0
mV
Offset Voltage Drift
DV/DT
2.0
Input Bias Current
IIB
55
INPUT CHARACTERISTICS
Offset Voltage
8.0
Input Offset Current
Input Common Mode Range
Common Mode Rejection Ratio
IOS
1.0
VCM
CMRR
VSS – 0.2
VSS + 0.15 < VCM < VDD − 0.15
mV
mV/°C
100
nA
200
nA
30
nA
80
nA
VDD+0.2
V
50
85
dB
VDD−0.30
VDD−0.10
V
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
RL = 600 W
Output Voltage Low
VOL
RL = 600 W
Short Circuit Current
ISC
VSS+0.14
VSS+0.30
10
V
mA
NOISE PERFORMANCE
eN
f = 1 kHz, no load
25
nV/√Hz
Open Loop Voltage Gain
AVOL
VO = 2 Vpp, RL = 600 W
88
dB
Gain Bandwidth Product
GBWP
RL = 2 kW
3.6
MHz
Gain Margin
AM
RL = 600 W, CL = 100 pF
9
dB
Phase Margin
yM
RL = 600 W, CL = 100 pF
60
°
Slew Rate
SR
RL = 10 kW
1.0
V/mS
THD+N
VOUT = 4 Vpp, fIN = 10 kHz,
AV = 2, RL = 10 kW
0.008
%
PSRR
VS = 2.7 V to 26 V
105
dB
ICC
No load, VCM = VS/2,
per channel
Voltage Noise Density
DYNAMIC PERFORMANCE
Total Harmonic Distortion + Noise
POWER SUPPLY
Power Supply Rejection Ratio
Quiescent Current
60
0.75
1.4
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
4
NCV952
Table 7. ELECTRICAL CHARACTERISTICS AT VS = 24 V
At TA = +25°C, RL = 10 kW connected to mid−supply, VCM = VOUT = midsupply, unless otherwise noted.
Boldface limits apply over the specified temperature range, TA = –40°C to +125°C, guaranteed by characterization and/or design.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
VOS
0.6
6.0
mV
Offset Voltage Drift
DV/DT
4.5
Input Bias Current
IIB
55
INPUT CHARACTERISTICS
Offset Voltage
8.0
Input Offset Current
Input Common Mode Range
Common Mode Rejection Ratio
IOS
1.0
VCM
CMRR
VSS – 0.2
VSS + 0.15 < VCM < VDD − 0.15
mV
mV/°C
100
nA
200
nA
30
nA
80
nA
VDD+0.2
V
50
100
dB
VDD−0.30
VDD−0.10
V
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
RL = 2 kW
Output Voltage Low
VOL
RL = 2 kW
Short Circuit Current
ISC
VSS+0.14
VSS+0.30
10
V
mA
NOISE PERFORMANCE
eN
f = 1 kHz, no load
25
nV/√Hz
Open Loop Voltage Gain
AVOL
VO = 2 Vpp, RL = 2 kW
88
dB
Gain Bandwidth Product
GBWP
RL = 10 kW
3.0
MHz
Gain Margin
AM
RL = 10 kW, CL = 100 pF
9.0
dB
Phase Margin
yM
RL = 10 kW, CL = 100 pF
70
°
Slew Rate
SR
RL = 10 kW
1.0
V/mS
THD+N
VOUT = 10 Vpp, fIN = 10 kHz,
AV = 2, RL = 10 kW
0.013
%
PSRR
VS = 2.7 V to 26 V
105
dB
ICC
No load, VCM = VS/2,
per channel
Voltage Noise Density
DYNAMIC PERFORMANCE
Total Harmonic Distortion + Noise
POWER SUPPLY
Power Supply Rejection Ratio
Quiescent Current
60
0.95
1.4
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
5
NCV952
TYPICAL CHARACTERISTICS
2.0
100
100
80
25°C
1.5
1.25
80
VS = 3 V
CL = 100 pF
60
125°C
1.0
40
40
20
0.75
−20
2
4
6
10
8
12
14
18
16
22
20
1k
24
10k
Figure 1. Supply Current vs. Supply Voltage
10
VS = 3 V
RL = 10 kW
1.6
SR+
1.2
SR−
1.0
VS = 3 V
f = 1 kHz
AV = −1
TA = 25°C
1
1.4
THD+N (%)
SLEW RATE (V/ms)
−20
10M
1M
Figure 2. Open Loop Gain and Phase Margin
vs. Frequency
2.0
0.8
0.1
0.6
0.2
0
−50
RL = 2 kW
0.001
−25
0
25
50
75
100
125
0
0.2
0.4
0.6
0.8
1.0
TEMPERATURE (°C)
OUTPUT VOLTAGE (RMS)
Figure 3. Slew Rate vs. Temperature
Figure 4. THD+N vs. Output Voltage
1
1000
VOLTAGE NOISE (nV/√Hz)
VS = 3 V
VOUT = 2 VPP
AV = −1
TA = 25°C
0.1
RL = 600 W
0.01
0.001
10
RL = 600 W
0.01
0.4
THD+N (%)
100k
0
FREQUENCY (Hz)
SUPPLY VOLTAGE (V)
1.8
20
Gain, RL = 600 W
Gain, RL = 2 kW
Phase Margin, RL = 600 W
Phase Margin, RL = 2 kW
0
0.5
60
PHASE MARGIN (°)
1.75
AVOL (dB)
SUPPLY CURRENT (mA)
−40°C
RL = 2 kW
VS = 5 V
RL = Open
AV = 10.2
TA = 25°C
100
10
100
1k
10k
100k
1
10
100
1k
10k
100k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 5. THD+N vs. Frequency
Figure 6. Input Voltage Noise vs. Frequency
www.onsemi.com
6
NCV952
TYPICAL CHARACTERISTICS
0
VS = 5 V
RL = 600 W
AV = 1
Input = 200 mVpp
TA = 25°C
−20
−40
COMMON MODE REJECTION (dB)
POWER SUPPLY REJECTION (dB)
0
VDD
−60
VSS
−80
−100
−120
10
100
1k
10k
VS = 5 V
RL = 600 W
Input = 500 mVpp
TA = 25°C
−20
−40
−60
−80
−100
−120
10
100k
100
FREQUENCY (Hz)
OUTPUT VOLTAGE (V)
HIGH LEVEL OUTPUT VOLTAGE (V)
VS = ±1.5 V
VID = −1 V
−0.4
T = 125°C
−0.6
−0.8
T = 25°C
−1.2
T = −40°C
−1.4
−1.6
0
5
10
1.0
0.8
T = 25°C
0.6
VS = ±1.5 V
VID = +1 V
0.4
0.2
T = 125°C
0
0
5
10
15
Figure 9. Low Level Output Voltage vs. Output
Current at 3 V Supply
Figure 10. High level Output Voltage vs.
Output Current at 3 V Supply
HIGH LEVEL OUTPUT VOLTAGE (V)
LOW LEVEL OUTPUT VOLTAGE (V)
T = −40°C
1.2
15
T = 125°C
−1.0
−1.5
T = 25°C
−2.0
T = −40°C
−2.5
−3.0
0
1.4
HIGH LEVEL OUTPUT CURRENT (mA)
VS = ±2.5 V
VID = −1 V
5
1M
1.6
LOW LEVEL OUTPUT CURRENT (mA)
0
−0.5
100k
Figure 8. CMRR vs. Frequency
0
−1.0
10k
FREQUENCY (Hz)
Figure 7. PSRR vs. Frequency
−0.2
1k
10
15
3.0
2.5
T = −40°C
2.0
T = 25°C
1.5
1.0
VS = ±2.5 V
VID = +1 V
0.5
T = 125°C
0
0
5
10
LOW LEVEL OUTPUT CURRENT (mA)
HIGH LEVEL OUTPUT CURRENT (mA)
Figure 11. Low Level Output Voltage vs.
Output Current at 5 V Supply
Figure 12. High Level Output Voltage vs.
Output Current at 5 V Supply
www.onsemi.com
7
15
NCV952
TYPICAL CHARACTERISTICS
13
HIGH LEVEL OUTPUT VOLTAGE (V)
LOW LEVEL OUTPUT VOLTAGE (V)
−6
VS = ±12 V
VID = −1 V
−7
−8
−9
T = 125°C
−10
−11
T = 25°C
−12
T = −40°C
−13
12
11
10
9
8
7
VS = ±12 V
VID = −1 V
6
0
5
10
20
15
0
5
10
20
15
LOW LEVEL OUTPUT CURRENT (mA)
HIGH LEVEL OUTPUT CURRENT (mA)
Figure 13. Low Level Output Voltage vs.
Output Current at 24 V Supply
Figure 14. High Level Output Voltage vs.
Output Current at 24 V Supply
3.0
80
70
2.5
VS = 5 V
CURRENT (nA)
60
CURRENT (nA)
T = −40°C
T = 25°C
T = 125°C
50
40
30
VS = 5 V
2.0
1.5
1.0
20
0.5
10
0
−50
−25
0
25
50
75
100
0
−50
125
−25
0
25
50
75
100
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 15. Input Bias Current vs. Temperature
Figure 16. Input Offset Current vs.
Temperature
www.onsemi.com
8
125
NCV952
TYPICAL CHARACTERISTICS
0.12
0.10
0.10
Output
Input
0.08
0.08
0.06
VOLTAGE (V)
VOLTAGE (V)
0.06
0.04
0.02
0
−0.02
VS = 5 V
RL = 600 W
TA = 25°C
−0.04
−0.06
−0.08
−0.10
−4
−2
0
2
4
0.04
0.02
VS = 5 V
RL = 600 W
TA = 25°C
0
−0.02
−0.04
6
8
10
12
−0.06
−4 −2
14
0
2
4
6
8
10
12
14
16
TIME (ms)
TIME (ms)
Figure 17. Noninverting Small Signal Transient
Response
Figure 18. Inverting Small Signal Transient
Response
4
5
3
4
3
Input
VOLTAGE (V)
2
VOLTAGE (V)
Output
Input
Output
1
0
VS = 5 V
RL = 600 W
TA = 25°C
−1
−2
−3
−4 −2
0
2
4
6
8
18
VS = 5 V
RL = 600 W
TA = 25°C
Output
2
1
0
−1
Input
−2
10
12
14
16
−3
−4 −2
18
0
2
4
6
8
10
12
14
16
TIME (ms)
TIME (ms)
Figure 19. Noninverting Large Signal Transient
Response
Figure 20. Inverting Large Signal Transient
Response
www.onsemi.com
9
18
NCV952
PACKAGE DIMENSIONS
TSSOP−8
CASE 948S
ISSUE C
8x
0.20 (0.008) T U
K REF
0.10 (0.004)
S
2X
L/2
8
B
−U−
1
PIN 1
IDENT
S
T U
S
5
L
0.20 (0.008) T U
M
J J1
4
V
ÇÇÇÇ
ÉÉÉÉ
ÉÉÉÉ
ÇÇÇÇ
K1
K
A
−V−
SECTION N−N
−W−
C
0.076 (0.003)
D
−T− SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH. PROTRUSIONS OR GATE BURRS. MOLD
FLASH OR GATE BURRS SHALL NOT EXCEED
0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT
EXCEED 0.25 (0.010) PER SIDE.
5. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
6. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE -W-.
S
DETAIL E
G
0.25 (0.010)
N
M
DIM
A
B
C
D
F
G
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
2.90
3.10
4.30
4.50
--1.10
0.05
0.15
0.50
0.70
0.65 BSC
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.114
0.122
0.169
0.177
--0.043
0.002
0.006
0.020
0.028
0.026 BSC
0.004
0.008
0.004
0.006
0.007
0.012
0.007
0.010
0.252 BSC
0_
8_
N
F
DETAIL E
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
10
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NCV952/D