MC100EP16VC 3.3V/5V ECL Differential Receiver/Driver with High Gain and Enable Output Description http://onsemi.com MARKING DIAGRAMS* 8 1 SOIC−8 D SUFFIX CASE 751 1 TSSOP−8 DT SUFFIX CASE 948R 8 KEP66 ALYW G 1 8 8 1 KP66 ALYWG G DFN8 MN SUFFIX CASE 506AA 3G MG G The EP16VC is a differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices but with high gain and enable output. The EP16VC provides an EN input which is synchronized with the data input (D) signal in a way that provides glitchless gating of the QHG and QHG outputs. When the EN signal is LOW, the input is passed to the outputs and the data output equals the data input. When the data input is HIGH and EN goes HIGH, it will force the QHG LOW and the QHG HIGH on the next negative transition of the data input. If the data input is LOW when the EN goes HIGH, the next data transition to a HIGH is ignored and QHG remains LOW and QHG remains HIGH. The next positive transition of the data input is not passed on to the data outputs under these conditions. The QHG and QHG outputs remain in their disabled state as long as the EN input is held HIGH. The EN input has no influence on the Q output and the data input is passed on (inverted) to this output whether EN is HIGH or LOW. This configuration is ideal for crystal oscillator applications where the oscillator can be free running and gated on and off synchronously without adding extra counts to the output. The VBB/D pin is internally dedicated and available for differential interconnect. VBB/D may rebias AC coupled inputs. When used, decouple VBB/D and VCC via a 0.01 mF capacitor and limit current sourcing or sinking to 1.5 mA. When not used, VBB/D should be left open. The 100 Series contains temperature compensation. 1 A L Y W M G 4 = Assembly Location = Wafer Lot = Year = Work Week = Date Code = Pb−Free Package (Note: Microdot may be in either location) Features *For additional marking information, refer to Application Note AND8002/D. • 310 ps Typical Prop Delay Q, 380 ps Typical Prop Delay QHG, QHG • Gain > 200 • Maximum Frequency > 3 GHz Typical • PECL Mode Operating Range: VCC = 3.0 V to 5.5 V • • • • • ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. with VEE = 0 V NECL Mode Operating Range: VCC = 0 V with VEE = −3.0 V to −5.5 V Open Input Default State QHG Output Will Default LOW with D Inputs Open or at VEE VBB Output Pb−Free Packages are Available © Semiconductor Components Industries, LLC, 2008 August, 2008 − Rev. 7 1 Publication Order Number: MC10EP16VC/D MC100EP16VC Table 1. PIN DESCRIPTION Q D VBB/D 1 8 2 7 6 3 LEN VBB EN 4 Q VCC Pin QHG QHG OE LATCH 5 D Function D* ECL Data Input Q ECL Data Output QHG, QHG ECL High Gain Data Outputs EN* ECL Enable Input VBB/D Reference Voltage Output / ECL Data Input VCC Positive Supply VEE Negative Supply EP (DFN8 only) Thermal exposed pad must be connected to a sufficient thermal conduit. Electrically connect to the most negative supply (GND) or leave unconnected, floating open. VEE *Pins will default LOW when left open. Figure 1. 8−Lead Pinout (Top View) and Logic Diagram Table 2. ATTRIBUTES Characteristics Value Internal Input Pulldown Resistor 75 kW Internal Input Pullup Resistor ESD Protection N/A Human Body Model Machine Model Charged Device Model Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1) SOIC−8 TSSOP−8 DFN8 Flammability Rating Oxygen Index: 28 to 34 Transistor Count > 4 kV > 200 V > 2 kV Pb Pkg Pb−Free Pkg Level 1 Level 1 Level 1 Level 1 Level 3 Level 1 UL 94 V−0 @ 0.125 in 167 Devices Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test 1. For additional information, see Application Note AND8003/D. http://onsemi.com 2 MC100EP16VC Table 3. MAXIMUM RATINGS Symbol Rating Unit VCC PECL Mode Power Supply Parameter VEE = 0 V Condition 1 Condition 2 6 V VEE NECL Mode Power Supply VCC = 0 V −6 V VI PECL Mode Input Voltage NECL Mode Input Voltage VEE = 0 V VCC = 0 V 6 −6 V V Iout Output Current Continuous Surge 50 100 mA mA IBB VBB Sink/Source ± 1.5 mA TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm 8 SOIC 8 SOIC 190 130 °C/W °C/W qJC Thermal Resistance (Junction−to−Case) Standard Board 8 SOIC 41 to 44 °C/W qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm 8 TSSOP 8 TSSOP 185 140 °C/W °C/W qJC Thermal Resistance (Junction−to−Case) Standard Board 8 TSSOP 41 to 44 °C/W qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm DFN8 DFN8 129 84 °C/W °C/W Tsol Wave Solder 265 265 °C qJC Thermal Resistance (Junction−to−Case) 35 to 40 °C/W VI v VCC VI w VEE Pb Pb−Free (Note 2) DFN8 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2. JEDEC standard multilayer board − 2S2P (2 signal, 2 power) Table 4. 100EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 3) −40°C Symbol Characteristic Min Typ 25°C Max Min Typ 85°C Max Min Typ Max Unit IEE Power Supply Current 27 37 47 32 42 52 34 44 54 mA VOH Output HIGH Voltage (Note 4) 2155 2280 2405 2155 2280 2405 2155 2280 2405 mV VOL Output LOW Voltage (Note 4) 1305 1400 1555 1305 1400 1555 1305 1400 1555 mV VIH Input HIGH Voltage (Single−Ended) 2075 2420 2075 2420 2075 2420 mV VIL Input LOW Voltage (Single−Ended) 1355 1675 1355 1675 1355 1675 mV VBB Output Voltage Reference 1775 2045 1775 2045 1775 2045 mV VIHCMR Input HIGH Voltage Common Mode Range (Differential Configuration) (Note 5) 3.3 2.0 3.3 2.0 3.3 V IIH Input HIGH Current 150 mA IIL Input LOW Current 1890 2.0 150 D 0.5 1890 150 0.5 0.5 1890 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 3. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V. 4. All loading with 50 W to VCC − 2.0 V. 5. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. http://onsemi.com 3 MC100EP16VC Table 5. 100EP DC CHARACTERISTICS, PECL VCC = 5.0 V, VEE = 0 V (Note 6) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 27 37 47 32 42 52 34 44 54 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 7) 3855 3980 4105 3855 3980 4105 3855 3980 4105 mV VOL Output LOW Voltage (Note 7) 3005 3100 3255 3005 3100 3255 3005 3100 3255 mV VIH Input HIGH Voltage (Single−Ended) 3775 4120 3775 4120 3775 4120 mV VIL Input LOW Voltage (Single−Ended) 3055 3375 3055 3375 3055 3375 mV VBB Output Voltage Reference 3475 3705 3475 3705 3475 3705 mV VIHCMR Input HIGH Voltage Common Mode Range (Differential Configuration) (Note 8) 5.0 2.0 5.0 2.0 5.0 V IIH Input HIGH Current 150 mA IIL Input LOW Current 3490 2.0 3490 150 D 3490 150 0.5 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 6. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to −0.5 V. 7. All loading with 50 W to VCC − 2.0 V. 8. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. Table 6. 100EP DC CHARACTERISTICS, NECL VCC = 0 V; VEE = −5.5 V to −3.0 V (Note 9) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 27 37 47 32 42 52 34 44 54 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 10) −1145 −1020 −895 −1145 −1020 −895 −1145 −1020 −895 mV VOL Output LOW Voltage (Note 10) −1995 −1900 −1745 −1995 −1900 −1745 −1995 −1900 −1745 mV VIH Input HIGH Voltage (Single−Ended) −1225 −880 −1225 −880 −1225 −880 mV VIL Input LOW Voltage (Single−Ended) −1945 −1625 −1945 −1625 −1945 −1625 mV VBB Output Voltage Reference −1525 −1325 −1525 −1325 −1525 −1325 mV VIHCMR Input HIGH Voltage Common Mode Range (Differential Configuration) (Note 11) 0.0 V IIH Input HIGH Current 150 mA IIL Input LOW Current −1425 VEE + 2.0 0.0 VEE + 2.0 150 0.5 −1425 0.0 VEE + 2.0 150 0.5 −1425 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 9. Input and output parameters vary 1:1 with VCC. 10. All loading with 50 W to VCC − 2.0 V. 11. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. http://onsemi.com 4 MC100EP16VC Table 7. AC CHARACTERISTICS VCC = 0 V; VEE = −3.0 V to −5.5 V or VCC = 3.0 V to 5.5 V; VEE = 0 V (Note 12) −40°C Symbol Characteristic Min Typ 25°C Max Min >3 85°C Typ Max Min >3 Typ Max fmax Maximum Frequency (Figure 2) tPLH, tPHL Propagation Delay (Differential) Q (Differential) QHG, QHG (Single−Ended) Q (Single−Ended) QHG, QHG 200 250 250 300 280 360 330 410 tS Setup Time EN = L to D EN =H to D 50 100 tH Hold Time EN = L to D EN =H to D 100 50 tSKEW Duty Cycle Skew (Note 13) 5.0 20 5.0 20 5.0 20 ps tJITTER RMS Random Clock Jitter (Figure 2) 0.2 <1 0.2 <1 0.2 <1 ps VPP Input Voltage Swing (Differential Configuration) tr tf Output Rise/Fall Times (20% − 80%) 350 450 400 500 250 300 300 350 310 380 360 430 15 60 50 100 50 15 100 50 >3 Unit 400 500 450 550 GHz 275 325 325 375 340 430 390 480 425 525 475 575 ps 5 40 50 100 18 10 ps 40 20 100 50 5 20 ps HG Q 25 150 800 800 1200 1200 25 150 800 800 1200 1200 25 150 800 800 1200 1200 mV Q QHG, QHG 200 70 300 130 400 220 250 80 350 150 450 240 250 100 350 170 500 270 ps 900 9 800 8 700 7 600 6 500 5 JITTEROUT ps (RMS) VOUTpp (mV) NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 12. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to VCC − 2.0 V. 13. Skew is measured between outputs under identical transitions. Duty cycle skew is defined only for differential operation when the delays are measured from the cross point of the inputs to the cross point of the outputs. ÉÉ ÉÉ ÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ 400 4 300 3 200 2 100 1 0 0 500 1000 1500 2000 2500 3000 3500 FREQUENCY (MHz) Figure 2. Fmax/Jitter for QHG, QHG Output http://onsemi.com 5 4000 900 9 800 8 700 7 600 6 500 5 400 4 300 3 200 2 100 1 ÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ 0 0 500 1000 1500 2000 2500 3000 3500 JITTEROUT ps (RMS) VOUTpp (mV) MC100EP16VC ÉÉ ÉÉ 4000 FREQUENCY (MHz) 900 9 800 8 700 7 600 6 500 5 400 4 300 3 ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉ ÉÉ 200 2 100 1 0 0 500 1000 1500 2000 2500 FREQUENCY (MHz) Figure 4. Fmax/Jitter for QHG, QHG Output http://onsemi.com 6 3000 JITTEROUT ps (RMS) VOUTpp (mV) Figure 3. Fmax/Jitter for Q Output 900 9 800 8 700 7 600 6 500 5 400 4 300 3 200 2 100 1 JITTEROUT ps (RMS) VOUTpp (mV) MC100EP16VC ÉÉÉÉÉÉÉ ÉÉÉÉÉ ÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ 0 0 500 1000 1500 2000 2500 3000 FREQUENCY (MHz) Figure 5. Fmax/Jitter for Q Output Q Zo = 50 W D Receiver Device Driver Device Q D Zo = 50 W 50 W 50 W VTT VTT = VCC − 2.0 V Figure 6. Typical Termination for Output Driver and Device Evaluation (See Application Note AND8020/D − Termination of ECL Logic Devices.) http://onsemi.com 7 MC100EP16VC ORDERING INFORMATION Package Shipping† SOIC−8 98 Units / Rail MC100EP16VCDG SOIC−8 (Pb−Free) 98 Units / Rail MC100EP16VCDR2 SOIC−8 2500 / Tape & Reel MC100EP16VCDR2G SOIC−8 (Pb−Free) 2500 / Tape & Reel MC100EP16VCDT TSSOP−8 100 Units / Rail MC100EP16VCDTG TSSOP−8 (Pb−Free) 100 Units / Rail MC100EP16VCDTR2 TSSOP−8 2500 / Rail MC100EP16VCDTR2G TSSOP−8 (Pb−Free) 2500 / Rail MC100EP16VCMNR4 DFN8 1000 / Tape & Reel DFN8 (Pb−Free) 1000 / Tape & Reel Device MC100EP16VCD MC100EP16VCMNR4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Resource Reference of Application Notes AN1405/D − ECL Clock Distribution Techniques AN1406/D − Designing with PECL (ECL at +5.0 V) AN1503/D − ECLinPSt I/O SPiCE Modeling Kit AN1504/D − Metastability and the ECLinPS Family AN1568/D − Interfacing Between LVDS and ECL AN1672/D − The ECL Translator Guide AND8001/D − Odd Number Counters Design AND8002/D − Marking and Date Codes AND8020/D − Termination of ECL Logic Devices AND8066/D − Interfacing with ECLinPS AND8090/D − AC Characteristics of ECL Devices http://onsemi.com 8 MC100EP16VC PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AJ −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 9 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 MC100EP16VC PACKAGE DIMENSIONS TSSOP−8 DT SUFFIX PLASTIC TSSOP PACKAGE CASE 948R−02 ISSUE A 8x 0.15 (0.006) T U 0.10 (0.004) S 2X L/2 L 8 5 1 PIN 1 IDENT 0.15 (0.006) T U K REF M T U V S 0.25 (0.010) B −U− 4 M A −V− S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 6. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. S F DETAIL E C 0.10 (0.004) −T− SEATING PLANE D −W− G DETAIL E http://onsemi.com 10 DIM A B C D F G K L M MILLIMETERS MIN MAX 2.90 3.10 2.90 3.10 0.80 1.10 0.05 0.15 0.40 0.70 0.65 BSC 0.25 0.40 4.90 BSC 0_ 6_ INCHES MIN MAX 0.114 0.122 0.114 0.122 0.031 0.043 0.002 0.006 0.016 0.028 0.026 BSC 0.010 0.016 0.193 BSC 0_ 6_ MC100EP16VC PACKAGE DIMENSIONS DFN8 CASE 506AA−01 ISSUE D D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 . 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B PIN ONE REFERENCE 2X 0.10 C 2X ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ TOP VIEW 0.10 C 0.08 C SEATING PLANE MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.20 0.30 2.00 BSC 1.10 1.30 2.00 BSC 0.70 0.90 0.50 BSC 0.20 −−− 0.25 0.35 A 0.10 C 8X DIM A A1 A3 b D D2 E E2 e K L E (A3) SIDE VIEW A1 C D2 e e/2 4 1 8X L E2 K 8 5 8X b 0.10 C A B 0.05 C NOTE 3 BOTTOM VIEW ECLinPS is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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