SUD19P06-60 Datasheet

SUD19P06-60
Vishay Siliconix
P-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 60
ID (A)d
RDS(on) ()
0.060 at VGS = - 10 V
- 19
0.077 at VGS = - 4.5 V
- 16.8
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % UIS Tested
Qg (Typ)
26
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• High Side Switch for Full Bridge Converter
• DC/DC Converter for LCD Display
TO-252
S
G
Drain Connected to Tab
G
D
S
Top View
D
P-Channel MOSFET
Ordering Information: SUD19P06-60-E3 (Lead (Pb)-free)
SUD19P06-60-GE3 (Lead (Pb)-free and Halogen free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise note)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 125 °C
Avalanche Current, Single Pulse
Repetitive Avalanche Energy, Single Pulsea
Power Dissipation
L = 0.1 mH
TC = 25 °C
TA = 25 °C
- 8.19
A
- 30
IAS
- 22
EAS
24.2
38.5
PD
mJ
c
W
2.3b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 18.3
ID
IDM
Pulsed Drain Current
Unit
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Maximum Junction-to-Case
Notes:
a. Duty cycle 1 %.
b. When mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Based up on TC = 25 °C.
Document Number: 69253
S11-2132 Rev. B, 31-Oct-11
Symbol
t  10 s
Steady State
RthJA
RthJC
Typical
Maximum
Unit
17
45
2.7
21
55
3.25
°C/W
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD19P06-60
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise note)
Parameter
Symbol
Test Conditions
Min .
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
VDS
VGS = 0 V, ID = - 250 µA
- 60
VGS(th)
VDS = VGS, ID = - 250 µA
-1
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
V
-3
V
VDS = 0 V, VGS = ± 20 V
± 100
nA
VDS = - 60 V, VGS = 0 V
-1
VDS = - 60 V, VGS = 0 V, TJ = 125 °C
- 50
VDS = - 60 V, VGS = 0 V, TJ = 150 ° C
VDS  - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 10 A
Drain-Source On-State Resistancea
a
Forward Transconductance
RDS(on)
- 125
- 30
A
0.048
0.060
VGS = - 10 V, ID = - 10 A, TJ = 125 °C
0.102
VGS = - 10 V, ID = - 10 A, TJ = 150 °C
0.120
gfs
µA
VGS = - 4.5 V, ID = - 5 A
0.061
VDS = - 15 V, ID = - 10 A
22

0.077
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
90
Total Gate Chargec
Qg
26
c
Gate-Source Charge
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay Time
Fall Timec
VDS = - 30 V, VGS = - 10 V, ID = - 10 A
td(off)
f = 1 MHz
VDD = - 30 V, RL = 3 
ID  - 19 A, VGEN = - 10 V, Rg = 2.5 
tf
Drain-Source Body Diode and Characteristics (TC = 25
1710
pF
130
40
nC
4.5
7
td(on)
tr
c
1140
VGS = 0 V, VDS = - 25 V, f = 1 MHz

7
8
15
9
15
65
100
30
45
ns
°C)b
IS
- 30
Pulsed Current
ISM
- 30
Forward Voltagea
VSD
IF = - 19 A, VGS = 0 V
-1
- 1.5
V
trr
IF = - 19 A, di/dt = 100 A/µs
41
61
ns
Continuous Current
Reverse Recovery Time
A
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69253
S11-2132 Rev. B, 31-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD19P06-60
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
30
VGS = 10 thru 5 V
4V
25
ID - Drain Current (A)
ID - Drain Current (A)
25
20
15
10
3V
5
20
15
10
TC = 125 °C
5
25 °C
- 55 °C
0
0
2
4
6
8
0
0.0
10
0.5
1.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
3.0
3.5
4.0
4.5
0.12
TC = - 55 °C
0.10
RDS(on) - On-Resistance (Ω)
30
g fs - Transconductance (S)
2.0
Transfer Characteristics
35
25 °C
25
125 °C
20
15
10
5
0
0.08
VGS = 4.5 V
0.06
VGS = 10 V
0.04
0.02
0.00
0
5
10
15
20
25
0
30
5
10
15
20
25
30
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
1800
20
V GS - Gate-to-Source Voltage (V)
1500
C - Capacitance (pF)
1.5
VGS - Gate-to-Source Voltage (V)
Ciss
1200
900
600
300
Coss
Crss
0
0
VDS = 30 V
ID = 10 A
16
12
8
4
0
10
20
30
40
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 69253
S11-2132 Rev. B, 31-Oct-11
50
60
0
10
20
30
40
50
Qg - Total Gate Charge (nC)
Gate Charge
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD19P06-60
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
ID = 10 A
I S - Source Current (A)
RDS(on) - On-Resistance (normalized)
1.9
VGS = 10 V
1.6
1.3
1.0
10
TJ = 150 °C
TJ = 25 °C
0.7
1
0.4
- 50
- 25
0
25
50
75
100
125
150
0.0
0.3
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
THERMAL RATINGS
25
100
Limited by rDS(on)*
100 ms
10
I D - Drain Current (A)
I D - Drain Current (A)
20
15
10
5
1s
DC
0.1
BVDSS Limited
0.01
0
0
25
50
75
100
125
150
10 s
1
TC = 25 °C
Single Pulse
0.001
0.1
TC - Case Temperature (°C)
* VGS
Maximum Drain Current
vs. Case Temperature
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 69253
S11-2132 Rev. B, 31-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD19P06-60
Vishay Siliconix
THERMAL RATINGS
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10- 2
10 -1
1
10
100
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69253.
Document Number: 69253
S11-2132 Rev. B, 31-Oct-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-252AA Case Outline
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.024
C
0.46
0.61
0.018
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
4.10
-
0.161
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
e1
0.090 BSC
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.01
1.52
0.040
0.060
ECN: T16-0236-Rev. P, 16-May-16
DWG: 5347
Notes
• Dimension L3 is for reference only.
Revision: 16-May-16
Document Number: 71197
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000