New Product SUD19P06-60 Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 ID (A)d rDS(on) (Ω) 0.060 at VGS = - 10 V - 19 0.077 at VGS = - 4.5 V - 16.8 • TrenchFET® Power MOSFET • 100 % UIS Tested Qg (Typ) RoHS 26 COMPLIANT APPLICATIONS • High Side Switch for Full Bridge Converter • DC/DC Converter for LCD Display TO-252 S G Drain Connected to Tab G D S Top View D P-Channel MOSFET Ordering Information: SUD19P06-60-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 125 °C Avalanche Current, Single Pulse Repetitive Avalanche Energy, Single Pulsea Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C - 8.19 A - 30 IAS - 22 EAS 24.2 38.5 PD mJ c W 2.3b, c TJ, Tstg Operating Junction and Storage Temperature Range V - 18.3 ID IDM Pulsed Drain Current Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Notes: a. Duty cycle ≤ 1 %. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Based up on TC = 25 °C. Document Number: 69253 S-72191-Rev. A, 22-Oct-07 Symbol t ≤ 10 s Steady State RthJA RthJC Typical Maximum Unit 17 45 2.7 21 55 3.25 °C/W www.vishay.com 1 New Product SUD19P06-60 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit -3 V nA Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage VDS VGS = 0 V, ID = - 250 µA - 60 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = - 60 V, VGS = 0 V -1 VDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) V VDS = - 60 V, VGS = 0 V, TJ = 150 ° C VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 10 A Drain-Source On-State Resistancea a Forward Transconductance rDS(on) - 125 - 30 A 0.048 0.060 VGS = - 10 V, ID = - 10 A, TJ = 125 °C 0.102 VGS = - 10 V, ID = - 10 A, TJ = 150 °C 0.120 gfs µA VGS = - 4.5 V, ID = - 5 A 0.061 VDS = - 15 V, ID = - 10 A 22 Ω 0.077 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 90 Total Gate Chargec Qg 26 c Gate-Source Charge Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Time Fall Timec VDS = - 30 V, VGS = - 10 V, ID = - 10 A td(off) f = 1 MHz VDD = - 30 V, RL = 3 Ω ID ≅ - 19 A, VGEN = - 10 V, Rg = 2.5 Ω tf Drain-Source Body Diode and Characteristics (TC = 25 1710 pF 130 40 nC 4.5 7.0 td(on) tr c 1140 VGS = 0 V, VDS = - 25 V, f = 1 MHz Ω 7.0 8 15 9 15 65 100 30 45 ns °C)b IS - 30 Pulsed Current ISM - 30 Forward Voltagea VSD IF = - 19 A, VGS = 0 V - 1.0 - 1.5 V trr IF = - 19 A, di/dt = 100 A/µs 41 61 ns Continuous Current Reverse Recovery Time A Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69253 S-72191-Rev. A, 22-Oct-07 New Product SUD19P06-60 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 10 thru 5 V 4V 25 ID - Drain Current (A) ID - Drain Current (A) 25 20 15 10 3V 5 20 15 10 TC = 125 °C 5 25 °C - 55 °C 0 0 2 4 6 8 0 0.0 10 0.5 1.0 VDS - Drain-to-Source Voltage (V) 2.5 3.0 3.5 4.0 4.5 Transfer Characteristics 0.12 35 TC = - 55 °C 0.10 rDS(on) - On-Resistance (Ω) 30 g fs - Transconductance (S) 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics 25 °C 25 125 °C 20 15 10 0.08 VGS = 4.5 V 0.06 VGS = 10 V 0.04 0.02 5 0.00 0 0 5 10 15 20 25 0 30 5 10 15 20 25 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 1800 30 20 VGS - Gate-to-Source Voltage (V) 1500 C - Capacitance (pF) 1.5 Ciss 1200 900 600 300 Coss Crss 0 0 VDS = 30 V ID = 10 A 16 12 8 4 0 10 20 30 40 50 60 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 69253 S-72191-Rev. A, 22-Oct-07 50 www.vishay.com 3 New Product SUD19P06-60 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 1.9 I S - Source Current (A) VGS = 10 V 1.6 (normalized) r DS(on) - On-Resistance ID = 10 A 1.3 1.0 10 TJ = 150 °C TJ = 25 °C 0.7 0.4 - 50 1 - 25 0 25 50 75 100 125 150 0.0 0.3 TJ - Junction Temperature (°C) 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 25 100 Limited by rDS(on)* 100 ms 10 I D - Drain Current (A) I D - Drain Current (A) 20 15 10 5 1s 10 s 1 DC 0.1 BVDSS Limited TC = 25 °C Single Pulse 0.01 0 0 25 50 75 100 125 150 0.001 0.1 1 TC - Case Temperature (°C) * VGS Maximum Drain Current vs. Case Temperature 10 100 1000 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 69253 S-72191-Rev. A, 22-Oct-07 SUD19P06-60 Vishay Siliconix THERMAL RATINGS 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69253. Document Number: 69253 S-72191-Rev. A, 22-Oct-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1