Si5904DC Vishay Siliconix Dual N-Channel 2.5 V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V ± 4.2 0.134 at VGS = 2.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET: 2.5 V Rated • Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET ® 1 D1 S1 D1 D2 G1 D1 S2 D2 G2 Marking Code G1 CB XX D2 G2 Lot Traceability and Date Code Part # Code Bottom View Ordering Information: Si5904DC-T1-E3 (Lead (Pb)-free) Si5904DC-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C Maximum Power Dissipationa TA = 85 °C PD ± 3.1 ± 3.0 ± 2.2 ± 10 1.8 0.9 2.1 1.1 1.1 0.6 TJ, Tstg Operating Junction and Storage Temperature Range V ± 4.2 IDM Pulsed Drain Current Soldering Recommendations (Peak ID - 55 to 150 Temperature)b, c Unit A W °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 50 60 90 110 30 40 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71065 S10-0548-Rev. D, 08-Mar-10 www.vishay.com 1 Si5904DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 0.6 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a V nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 85 °C 5 VDS ≥ 5 V, VGS = 4.5 V RDS(on) 1.5 ± 100 µA 10 A VGS = 4.5 V, ID = 3.1 A 0.065 0.075 VGS = 2.5 V, ID = 2.3 A 0.115 0.143 gfs VDS = 10 V, ID = 3.1 A 8 VSD IS = 0.9 A, VGS = 0 V 0.8 1.2 4 6 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.3 Turn-On Delay Time td(on) 12 18 35 55 VDS = 10 V, VGS = 4.5 V, ID = 3.1 A VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 0.6 IF = 0.9 A, dI/dt = 100 A/µs 19 30 9 15 40 80 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10 TC = - 55 °C VGS = 5 V thru 3 V 25 °C 8 I D - Drain Current (A) I D - Drain Current (A) 8 2.5 V 6 4 125 °C 6 4 2V 2 2 1.5 V 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 71065 S10-0548-Rev. D, 08-Mar-10 Si5904DC Vishay Siliconix 0.30 600 0.25 500 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 0.15 VGS = 2.5 V 0.10 VGS = 4.5 V 400 300 200 Coss 0.05 100 0.00 0 Crss 0 2 4 6 8 10 0 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 1.6 5 VDS = 10 V ID = 3.1 A VGS = 4.5 V ID = 3.1 A 1.4 3 2 (Normalized) 4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 4 1.2 1.0 0.8 1 0.6 - 50 0 0 1 2 3 4 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 0.20 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 1 0.0 - 25 0.15 ID = 3.1 A 0.10 0.05 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71065 S10-0548-Rev. D, 08-Mar-10 5 www.vishay.com 3 Si5904DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 50 40 ID = 250 µA 0.0 Power (W) VGS(th) Variance (V) 0.2 - 0.2 - 0.4 30 20 10 - 0.6 - 50 - 25 0 25 50 75 100 125 0 10-4 150 10-3 10-2 10-1 TJ - Temperature (°C) 1 10 100 600 Time (s) Single Pulse Power Threshold Voltage 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 90 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71065. www.vishay.com 4 Document Number: 71065 S10-0548-Rev. D, 08-Mar-10 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000