Si5853DC Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 - 20 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus • Compliant to RoHS Directive 2002/95/EC SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage IF (A) 20 0.48 V at 0.5 A 1.0 1206-8 ChipFET® S K D A 1 A K A K G S D Marking Code G JA XX Lot Traceability and Date Code D Part # Code Bottom View Ordering Information: Si5853DC-T1-E3 (Lead (Pb)-free) Si5853DC-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage (MOSFET and Schottky) VDS - 20 Reverse Voltage (Schottky) VKA 20 Gate-Source Voltage (MOSFET) VGS Continuous Drain Current (TJ = 150 °C) (MOSFET)a TA = 25 °C TA = 85 °C ID Continuous Source Current (MOSFET Diode Conduction)a IS Average Forward Current (Schottky) IF Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c ±8 - 3.6 - 2.7 - 2.6 - 1.9 - 10 - 1.8 TA = 25 °C TA = 85 °C TA = 25 °C - 0.9 TA = 85 °C TJ, Tstg A 7 2.1 PD V 1.0 IFM Pulsed Forward Current (Schottky) V ±8 IDM Pulsed Drain Current (MOSFET) Unit 1.1 1.1 0.6 1.3 0.96 0.68 0.59 - 55 to 150 260 W °C Notes: a. Surface mounted on 1" x 1" FR4 board. b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71239 S10-0547-Rev. D, 08-Mar-10 www.vishay.com 1 Si5853DC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Device t≤5s Schottky Junction-to-Ambienta Steady State Junction-to-Foot Symbol MOSFET Steady State MOSFET RthJA Schottky MOSFET Schottky RthJF Typical Maximum 50 60 77 95 90 110 110 130 30 40 33 40 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit VGS(th) VDS = VGS, ID = - 250 µA - 0.45 IGSS VDS = 0 V, VGS = ± 8 V - 1.0 V VDS = - 20 V, VGS = 0 V ± 100 -1 nA VDS = - 20 V, VGS = 0 V, TJ = 85 °C -5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS ≤ − 5 V, VGS = - 4.5 V - 10 VGS = - 4.5 V, ID = - 2.7 A Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a A 0.095 0.110 VGS = - 2.5 V, ID = - 2.2 A 0.137 0.160 VGS = - 1.8 V, ID = - 1 A 0.205 0.240 gfs VDS = - 10 V, ID = - 2.7 A 7 VSD IS = - 0.9 A, VGS = 0 V - 0.8 - 1.2 5.1 7.7 RDS(on) µA Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time VDS = - 10 V, VGS = - 4.5 V, ID = - 2.7 A tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 1.2 1.0 16 VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω IF = - 0.9 A, dI/dt = 100 A/µs 25 30 45 30 45 27 40 20 40 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Forward Voltage Drop Maximum Reverse Leakage Current Junction Capacitance www.vishay.com 2 Symbol VF Irm CT Test Conditions Typ. Max. IF = 0.5 A Min. 0.42 0.48 IF = 0.5 A, TJ = 125 °C 0.33 0.4 Vr = 20 V 0.002 0.100 Vr = 20 V, TJ = 85 °C 0.10 1 Vr = 20 V, TJ = 125 °C 1.5 10 Vr = 10 V 31 Unit V mA pF Document Number: 71239 S10-0547-Rev. D, 08-Mar-10 Si5853DC Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10 VGS = 5 V thru 3 V TC = - 55 °C 2.5 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 6 2V 4 2 25 °C 125 °C 6 4 2 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0.0 4.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.6 800 VGS = 1.8 V Ciss 600 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.5 0.4 0.3 VGS = 2.5 V 0.2 400 200 VGS = 4.5 V Coss 0.1 Crss 0 0.0 0 2 4 6 8 0 10 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 1.6 5 VGS = 4.5 V ID = 2.7 A VDS = 10 V ID = 2.7 A 1.4 4 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 4 3 2 1.2 1.0 0.8 1 0 0 1 2 3 4 5 6 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71239 S10-0547-Rev. D, 08-Mar-10 150 www.vishay.com 3 Si5853DC Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.4 TJ = 150 °C TJ = 25 °C 0.2 0.1 0.0 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 50 0.3 40 ID = 250 µA 0.2 Power (W) VGS(th) Variance (V) ID = 2.7 A 0.3 0.1 30 20 0.0 10 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 10-4 150 10-3 10-2 10-1 TJ - Temperature (°C) 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 90 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71239 S10-0547-Rev. D, 08-Mar-10 Si5853DC Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 1 I F - Forward Current (A) I R - Reverse Current (mA) 20 10 0.1 10 V 20 V 0.01 TJ = 150 °C TJ = 25 °C 1 0.001 0.1 0.0001 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 TJ - Junction Temperature (°C) VF - Forward Voltage Drop (V) Reverse Current vs. Junction Temperature Forward Voltage Drop 1.0 CT - Junction Capacitance (pF) 150 120 90 60 30 0 0 4 8 12 16 20 VKA - Reverse Voltage (V) Capacitance Document Number: 71239 S10-0547-Rev. D, 08-Mar-10 www.vishay.com 5 Si5853DC Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 110 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71239. www.vishay.com 6 Document Number: 71239 S10-0547-Rev. D, 08-Mar-10 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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