Si5515DC Vishay Siliconix Complementary 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 APPLICATIONS 0.086 @ VGS = −4.5 V −4.1 D Load Switching for Portable Devices 0.121 @ VGS = −2.5 V −3.4 0.171 @ VGS = −1.8 V −2.9 20 P-Channel P Channel −20 20 D TrenchFETr Power MOSFETS D Ultra Low rDS(on) and Excellent Power Handling In Compact Footprint rDS(on) (W) D1 1206-8 ChipFETr S2 1 S1 D1 G2 G1 D1 G1 S2 D2 G2 Marking Code D2 EC XXX Lot Traceability and Date Code Part # Code Bottom View S1 D2 N-Channel MOSFET P-Channel MOSFET Ordering Information: Si5515DC-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 85_C Pulsed Drain Current ID 5 secs IS TA = 25_C Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range PD Steady State 5 secs 20 Steady State Unit −20 V "8 5.9 4.4 −4.1 −3 4.2 3.1 −2.9 −2.2 IDM Continuous Source Current (Diode Conduction)a P-Channel 20 1.8 0.9 −1.8 −0.9 2.1 1.1 2.1 1.1 1.1 0.6 1.1 0.6 TJ, Tstg A −15 W −55 to 150 Soldering Recommendations (Peak Temperature)b, c _C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Foot (Drain) Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 50 60 90 110 30 40 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72221 S-41167—Rev. B, 14-Jun-04 www.vishay.com 1 Si5515DC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage Gate Body Leakage Gate-Body Zero Gate Voltage Drain Current On State Drain Currenta On-State Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) D( ) rDS(on) DS( ) gfs f VSD VDS = VGS, ID = 250 mA N-Ch 0.4 1.0 VDS = VGS, ID = −250 mA P-Ch −0.4 −1.0 VDS = 0 V, V VGS = "8 V N-Ch "100 P-Ch "100 VDS = 20 V, VGS = 0 V N-Ch 1 VDS = −20 V, VGS = 0 V P-Ch −1 VDS = 20 V, VGS = 0 V, TJ = 85_C N-Ch 5 VDS = −20 V, VGS = 0 V, TJ = 85_C P-Ch VDS w 5 V, VGS = 4.5 V N-Ch 20 VDS p −5 V, VGS = −4.5 V P-Ch −15 V nA mA −5 A VGS = 4.5 V, ID = 4.4 A N-Ch 0.032 0.040 VGS = −4.5 V, ID = −3.0 A P-Ch 0.069 0.086 VGS = 2.5 V, ID = 4.1 A N-Ch 0.036 0.045 VGS = −2.5 V, ID = −2.5 A P-Ch 0.097 0.121 VGS = 1.8 V, ID = 1.9 A N-Ch 0.042 0.052 VGS = −1.8 V, ID = −0.6 A P-Ch 0.137 0.171 VDS = 10 V, ID = 4.4 A N-Ch 22 VDS = −10 V, ID = −3 A P-Ch 8 IS = 0.9 A, VGS = 0 V N-Ch 0.8 1.2 IS = −0.9 A, VGS = 0 V P-Ch −0.8 −1.2 N-Ch 5 7.5 8.5 W S V Dynamicb Total Gate Charge Qg Gate Source Charge Gate-Source Qgs Gate Drain Charge Gate-Drain Qgdd Turn On Delay Time Turn-On td(on) d( ) Rise Time Turn Off Delay Time Turn-Off Fall Time Source-Drain Reverse Recovery Time N-Channel VDS = 10 V, VGS = 4.5 V, ID = 4.4 A P-Channel VDS = −10 10 V V, VGS = −4.5 45V V, ID = −3 3A P-Ch 5.5 N-Ch 0.85 P-Ch 0.91 nC N-Ch 1 P-Ch 1.6 N-Ch 20 30 P-Ch 18 30 tr N-Channel VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W N-Ch 36 55 P-Ch 32 50 td(off) d( ff) P-Channel VDD = −10 10 V, V RL = 10 W ID ^ −1 1 A, VGEN = −4.5 4.5 V, RG = 6 W N-Ch 30 45 P-Ch 42 65 N-Ch 12 20 P-Ch 26 40 IF = 0.9 A, di/dt = 100 A/ms N-Ch 45 90 IF = −0.9 A, di/dt = 100 A/ms P-Ch 30 60 tf trr ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%, b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 72221 S-41167—Rev. B, 14-Jun-04 Si5515DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Output Characteristics Transfer Characteristics 20 20 VGS = 5 thru 2 V TC = −55_C 16 12 I D − Drain Current (A) I D − Drain Current (A) 16 1.5 V 8 4 25_C 12 125_C 8 4 1V 0 0 1 2 3 4 0 0.0 5 0.4 VDS − Drain-to-Source Voltage (V) 0.8 1.6 2.0 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 800 0.10 700 0.08 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 1.2 0.06 VGS = 1.8 V VGS = 2.5 V 0.04 600 Ciss 500 400 300 200 0.02 Coss VGS = 4.5 V 100 0.00 Crss 0 0 4 8 12 16 0 20 4 ID − Drain Current (A) 12 16 20 VDS − Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 5 1.6 VDS = 10 V ID = 4.4 A VGS = 4.5 V ID = 4.4 A 4 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 8 3 2 1 1.2 1.0 0.8 0 0 1 2 3 4 Qg − Total Gate Charge (nC) Document Number: 72221 S-41167—Rev. B, 14-Jun-04 5 6 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) www.vishay.com 3 Si5515DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL On-Resistance vs. Gate-to-Source Voltage 0.10 10 0.08 r DS(on) − On-Resistance ( W ) I S − Source Current (A) Source-Drain Diode Forward Voltage 20 TJ = 150_C TJ = 25_C 1 0.0 ID = 4.4 A 0.06 ID = 2 A 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD − Source-to-Drain Voltage (V) Threshold Voltage 3 4 5 Single Pulse Power 0.2 50 0.1 40 ID = 250 mA −0.0 Power (W) V GS(th) Variance (V) 2 VGS − Gate-to-Source Voltage (V) −0.1 30 20 −0.2 10 −0.3 −0.4 −50 −25 0 25 50 75 100 125 0 10−4 150 10−3 TJ − Temperature (_C) 10−2 10−1 1 10 100 600 Time (sec) Safe Operating Area 100 IDM Limited rDS(on) Limited I D − Drain Current (A) 10 1 0.1 P(t) = 0.0001 P(t) = 0.001 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc TA = 25_C Single Pulse BVDSS Limited 1000 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72221 S-41167—Rev. B, 14-Jun-04 Si5515DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 N−CHANNEL Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 Normalized Effective Transient Thermal Impedance 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 10−1 1 Square Wave Pulse Duration (sec) Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL Output Characteristics Transfer Characteristics 15 15 VGS = 5 thru 3 V TC = −55_C 2.5 V 12 I D − Drain Current (A) I D − Drain Current (A) 12 9 2V 6 3 1.5 V 1V 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) Document Number: 72221 S-41167—Rev. B, 14-Jun-04 5 25_C 9 125_C 6 3 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS − Gate-to-Source Voltage (V) www.vishay.com 5 Si5515DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL On-Resistance vs. Drain Current Capacitance 800 0.25 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.30 VGS = 1.8 V 0.20 0.15 VGS = 2.5 V 0.10 VGS = 4.5 V 600 Ciss 400 200 Coss 0.05 Crss 0.00 0 0 3 6 9 12 0 15 4 ID − Drain Current (A) Gate Charge 20 On-Resistance vs. Junction Temperature VDS = 10 V ID = 3 A VGS = 4.5 V ID = 3 A 4 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 16 1.6 3 2 1 1.2 1.0 0.8 0 0 1 2 3 4 5 6 7 0.6 −50 8 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage r DS(on) − On-Resistance ( W ) TJ = 150_C TJ = 25_C 0.3 ID = 0.6 A 0.2 ID = 3 A 0.1 0.0 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) www.vishay.com 50 0.4 10 1 0.0 25 TJ − Junction Temperature (_C) 20 I S − Source Current (A) 12 VDS − Drain-to-Source Voltage (V) 5 6 8 1.2 1.4 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) Document Number: 72221 S-41167—Rev. B, 14-Jun-04 Si5515DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL Threshold Voltage Single Pulse Power 0.4 50 40 ID = 250 mA 0.2 30 Power (W) V GS(th) Variance (V) 0.3 0.1 20 0.0 10 −0.1 −0.2 −50 −25 0 25 50 75 100 125 0 10−4 150 10−3 10−2 TJ − Temperature (_C) 1 10 100 600 Time (sec) 100 Safe Operating Area IDM Limited rDS(on) Limited 10 I D − Drain Current (A) 10−1 P(t) = 0.0001 P(t) = 0.001 1 ID(on) Limited 0.1 P(t) = 0.01 P(t) = 0.1 P(t) = 1 TA = 25_C Single Pulse P(t) = 10 dc BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 Document Number: 72221 S-41167—Rev. B, 14-Jun-04 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 www.vishay.com 7 Si5515DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 www.vishay.com 8 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72221 S-41167—Rev. B, 14-Jun-04