Si5855DC Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage IF (A) 20 0.375 V at 1 A 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Ultra Low Vf Schottky • Si5853DC Pin Compatible • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Charging Circuit in Portable Devices 1206-8 ChipFET® S K D A 1 A K A K G S Marking Code D G JB XXX Lot Traceability and Date Code D Part # Code Bottom View Ordering Information: Si5855DC-T1-E3 (Lead (Pb)-free) Si5855DC-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage (MOSFET) VDS Reverse Voltage (Schottky) VKA 20 Gate-Source Voltage (MOSFET) VGS ±8 Continuous Drain Current (TJ = 150 °C) (MOSFET)a TA = 25 °C TA = 85 °C ID - 20 - 3.6 Continuous Source Current (MOSFET Diode Conduction)a IS Average Forward Current (Schottky) IF Pulsed Forward Current (Schottky) IFM Maximum Power Dissipation (MOSFET)a a Maximum Power Dissipation (Schottky) Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c V - 2.7 - 2.6 IDM Pulsed Drain Current (MOSFET) - 1.9 - 10 - 1.8 - 0.9 7 2.1 1.1 TA = 85 °C 1.1 0.6 1.9 1.1 PD TA = 85 °C 1.0 TJ, Tstg A 1.0 TA = 25 °C TA = 25 °C Unit W 0.56 - 55 to 150 260 °C Notes: a. Surface mounted on 1" x 1" FR4 board. b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72232 S10-0547-Rev. C, 08-Mar-10 www.vishay.com 1 Si5855DC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Device t≤5s Schottky Junction-to-Ambienta Steady State Junction-to-Foot Symbol MOSFET Steady State MOSFET RthJA Schottky MOSFET Schottky RthJF Typical Maximum 50 60 54 65 90 110 95 115 30 40 30 40 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 0.45 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 250 µA - 1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 85 °C -5 On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a VDS ≤ − 5 V, VGS = - 4.5 V - 10 A VGS = - 4.5 V, ID = - 2.7 A 0.095 0.110 VGS = - 2.5 V, ID = - 2.2 A 0.137 0.160 VGS = - 1.8 V, ID = - 1 A 0.205 0.240 gfs VDS = - 10 V, ID = - 2.7 A 7 VSD IS = - 0.9 A, VGS = 0 V - 0.8 - 1.2 5.1 7.7 RDS(on) µA Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time VDS = - 10 V, VGS = - 4.5 V, ID = - 2.7 A tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 1.2 1.0 VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω IF = - 0.9 A, dI/dt = 100 A/µs 16 25 30 45 30 45 27 40 20 40 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Forward Voltage Drop Maximum Reverse Leakage Current Junction Capacitance www.vishay.com 2 Symbol VF Irm CT Test Conditions Typ. Max. IF = 1 A Min. 0.34 0.375 IF = 1 A, TJ = 125 °C 0.255 0.290 Vr = 20 V 0.05 0.500 Vr = 20 V, TJ = 85 °C 2 20 Vr = 20 V, TJ = 125 °C 10 100 Vr = 10 V 90 Unit V mA pF Document Number: 72232 S10-0547-Rev. C, 08-Mar-10 Si5855DC Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10 TC = - 55 °C VGS = 5 V thru 3 V 2.5 V 25 °C 8 I D - Drain Current (A) I D - Drain Current (A) 8 6 2V 4 2 125 °C 6 4 2 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0.0 4.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.6 800 VGS = 1.8 V Ciss 600 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.5 0.4 0.3 0.2 VGS = 2.5 V 400 200 VGS = 4.5 V Coss 0.1 Crss 0 0.0 0 2 4 6 8 0 10 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 20 1.6 VDS = 10 V ID = 2.7 A VGS = 4.5 V ID = 2.7 A 4 3 2 1 (Normalized) 1.4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 4 1.2 1.0 0.8 0 0 1 2 3 4 5 6 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 72232 S10-0547-Rev. C, 08-Mar-10 150 www.vishay.com 3 Si5855DC Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 1 0.0 ID = 2.7 A 0.3 0.2 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 50 0.3 40 ID = 250 µA 0.2 Power (W) VGS(th) Variance (V) 1 VSD - Source-to-Drain Voltage (V) 0.1 30 20 0.0 10 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 10-4 150 10-3 10-2 TJ - Temperature (°C) 10-1 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power 100 IDM Limited Limited by RDS(on)* I D - Drain Current (A) 10 P(t) = 0.001 1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 0.1 P(t) = 1 P(t) = 10 DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 72232 S10-0547-Rev. C, 08-Mar-10 Si5855DC Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 90 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 100 I F - Forward Current (A) I R - Reverse Current (mA) 10 1 0.1 20 V 10 V 0.01 TJ = 150 °C TJ = 25 °C 1 0.001 0.0001 - 50 - 25 0 25 50 75 100 125 150 0.1 0.0 0.1 0.2 0.3 0.4 0.5 TJ - Junction Temperature (°C) VF - Forward Voltage Drop (V) Reverse Current vs. Junction Temperature Forward Voltage Drop Document Number: 72232 S10-0547-Rev. C, 08-Mar-10 0.6 www.vishay.com 5 Si5855DC Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted CT - Junction Capacitance (pF) 600 500 400 300 200 100 0 0 4 8 12 16 20 VKA - Reverse Voltage (V) Capacitance 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Notes: 0.2 PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 95 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 100 10 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72232. www.vishay.com 6 Document Number: 72232 S10-0547-Rev. C, 08-Mar-10 Package Information Vishay Siliconix 1206-8 ChipFETR 4 L D 8 7 6 5 4 1 S 2 e 3 E1 5 6 7 8 4 3 2 1 E 4 b x c Backside View 2X 0.10/0.13 R C1 A DETAIL X NOTES: 1. All dimensions are in millimeaters. 2. Mold gate burrs shall not exceed 0.13 mm per side. 3. Leadframe to molded body offset is horizontal and vertical shall not exceed 0.08 mm. 4. Dimensions exclusive of mold gate burrs. 5. No mold flash allowed on the top and bottom lead surface. MILLIMETERS Dim A b c c1 D E E1 e L S INCHES Min Nom Max Min Nom Max 1.00 − 1.10 0.039 − 0.043 0.25 0.30 0.35 0.010 0.012 0.014 0.1 0.15 0.20 0.004 0.006 0.008 0 − 0.038 0 − 0.0015 2.95 3.05 3.10 0.116 0.120 0.122 1.825 1.90 1.975 0.072 0.075 0.078 1.55 1.65 1.70 0.061 0.065 0.067 0.65 BSC 0.28 − 0.0256 BSC 0.42 0.011 − 0.55 BSC 0.022 BSC 5_Nom 5_Nom 0.017 ECN: C-03528—Rev. F, 19-Jan-04 DWG: 5547 Document Number: 71151 15-Jan-04 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR 1206-8 ChipFET® 0.093 0.026 0.016 0.010 (0.650) (0.406) (0.244) 0.036 (0.914) 0.022 (0.559) (2.032) 0.080 (2.357) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 2 Document Number: 72593 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000