INTERSIL HS

HS-82C08RH
TM
Data Sheet
August 2000
File Number
Radiation Hardened 8-Bit Bus Transceiver
Features
The Intersil HS-82C08RH is a radiation-hardened octal bus
transceiver with three-state outputs. It is manufactured using
a self-aligned, junction isolated CMOS process and is
designed for use with the HS-80C08RH radiation-hardened
microprocessor. The HS-82C08RH allows asynchronous
two-way communication between data buses. The direction
of data flow is determined by the logic level on the
transmit/receive (T/R) input. A logic high on the T/R input
specifies data flow from Port A to Port B of the device.
Conversely, a logic low on the T/R input specifies data flow
from Port B to Port A. The Output Enable input disables both
ports by placing them in the high impedance state.
• Electrically Screened to SMD # 5962-95714
The HS-82C08RH is ideally suited for a wide variety of
buffering applications in radiation-hardened microcomputer
systems.
• Electrically Equivalent to Sandia SA2997
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95714. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
3040.3
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Performance
- Total Dose. . . . . . . . . . . . . . . . . . . . . 100 krad(Si) (Max)
- Latch-Up Immune EPI-CMOS . . . . . >1 x 1012 rad(Si)/s
• Bidirectional Three-State Input/Outputs
• Low Propagation Delay Time
• Low Power Consumption
• Single Power Supply . . . . . . . . . . . . . . . . . . . . . . . . . +5V
• Military Temperature Range . . . . . . . . . . . -55oC to 125oC
Ordering Information
INTERNAL
MKT. NUMBER
ORDERING NUMBER
TEMP. RANGE
(oC)
5962R9571401QRC
HS1-82C08RH-8
-55 to 125
5962R9571401QXC
HS9-82C08RH-8
-55 to 125
5962R9571401VRC
HS1-82C08RH-Q
-55 to 125
5962R9571401VXC
HS9-82C08RH-Q
-55 to 125
Functional Diagram
TRUTH TABLE
INPUTS
A0
B0
B1
B2
B3
B4 PORT
B
B5
B6
B7
A1
A2
A3
PORT A4
A
A5
A6
A7
OPERATION
OUTPUT
ENABLE
TRANSMIT
/RECEIVE
PORT A
PORT B
0
0
Out
In
0
1
In
Out
1
X
High Z
High Z
X = Don’t Care
T/R
OE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
HS-82C08RH
Pinouts
20 LEAD CERAMIC DUAL-IN-LINEMETAL-SEAL PACKAGE
(SBDIP) MIL-STD-1835, CDIP2-T20
TOP VIEW
20 LEAD CERAMIC METAL SEALFLATPACK PACKAGE
(FLATPACK) MIL-STD-1835, CDFP4-F20
TOP VIEW
A0
1
20 VDD
A0
1
20
VDD
A1
2
19 B0
A1
2
19
B0
A2
3
18 B1
A2
3
18
B1
17 B2
A3
4
17
B2
A4
5
16
B3
A5
6
15
B4
A6
7
14
B5
A7
8
13
B6
9
12
B7
10
11
T/R
A3
A4
4
5
16 B3
A5
6
15 B4
A6
7
14 B5
A7
8
13 B6
OE
OE
9
12 B7
GND
GND 10
PIN
A0-A7
B0-B7
11 T/R
DESCRIPTION
Local Bus Data I/O Pins
System Bus Data I/O Pins
PIN
T/R
OE
DESCRIPTION
Transmit/Receive Input
Active Low Output Enable
Logic Diagram
A0
TSB
1
19
B0
18
B1
17
B2
16
B3
15
B4
14
B5
13
B6
12
B7
TSB
A1
TSB
2
TSB
A2
TSB
3
TSB
A3
TSB
4
TSB
A4
TSB
5
TSB
A5
TSB
6
OE 9
B ENABLE
A6
TSB
TSB
7
TSB
A ENABLE
T/R11
A7
8
TSB
TSB
NOTE: An Important caveat that is applicable to CMOS devices in general is that unused inputs should never be left floating. This rule applies to
inputs connected to a three-state bus. The need for external pull-up resistors during three-state bus conditions is eliminated by the presence of
regenerative latches on the following HS-82C08RH pins. A0-7 and B0-7 The functional block diagram depicts one of these pins with the regenerative
latch. When the CMOS driver assumes the high impedance state, the latch holds the bus in whatever logic state (high or low) it was before the threestate condition. A transient drive current of ±1.5mA at VDD/2 ±0.5V for 10ns is required to switch the latch. Thus, CMOS device inputs connected to
the bus are not allowed to float during three-state conditions.
2
HS-82C08RH
Switching Time Waveforms
tr
INPUT
AN OR BN
OUTPUT
BN OR AN
VDD
0V
tf
0.5VDD
0.5VDD
tPLH
VDD
DEVICE
UNDER
TEST
tPHL
0.5VDD
0.5VDD
TEST POINTS
CL (NOTE)
0V
tr = tf ≤ 20ns
10% TO 90%
NOTE: CL includes stray and jig capacitance.
FIGURE 1. PORT TO PORT
VDD
FIGURE 2. AC TESTING LOAD CIRCUIT
tr = tf ≤ 20ns
10% TO 90%
tr
INPUT OE
0.5VDD
0V
tf
0.5VDD
0.1VDD
PORT
OUTPUT
tPZH
VOH
0.5VDD
0V
tPHZ
tPLZ
PORT
OUTPUT
VDD
0.5VDD
VOL
tPZL
0.1VDD
FIGURE 3. OE TO HIGH-IMPEDANCE, OE TO PORT OUTPUT
3
HS-82C08RH
Die Characteristics
DIE DIMENSIONS:
INTERFACE MATERIALS:
76.0 mils x 89.4 mils x 14 mils ±1 mil
Glassivation:
Type: SiO2
Thickness: 8kÅ ±1kÅ
Top Metallization:
Type: Si - Al
Thickness: 11kÅ ±2kÅ
Metallization Mask Layout
(19) B0
(1) A0
(20) VDD
HS-82C08RH
(17) B2
A3 (4)
(16) B3
A4 (5)
(15) B4
A5 (6)
(14) B5
A6 (7)
(13) B6
A7 (8)
(12) B7
T/R (9)
A2 (3)
GND (10)
(18) B1
OE (9)
A1 (2)
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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4
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