V20120C, VI20120C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS ® • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses TO-262AA • High efficiency operation K • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 3 1 1 V20120C 2 3 VI20120C PIN 1 PIN 2 PIN 1 PIN 2 PIN 3 CASE PIN 3 K TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and AEC-Q101 qualified PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 120 V IFSM 120 A VF at IF = 10 A 0.64 V TJ max. 150 °C Package TO-220AB, TO-262AA Diode variation Common cathode Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Max. repetitive peak reverse voltage Max. average forward rectified current (fig. 1) VRRM per device Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Voltage rate of change (rated VR) Operating junction and storage temperature range per diode IF(AV) V20120C VI20120C 120 20 10 UNIT V A 120 A dV/dt 10 000 V/μs TJ, TSTG -40 to +150 °C IFSM Revision: 11-May-16 Document Number: 89159 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20120C, VI20120C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A Instantaneous forward voltage per diode SYMBOL TA = 25 °C IF = 10 A VF (1) IF = 5 A TA = 125 °C IF = 10 A TYP. MAX. 0.62 - 0.81 0.90 0.54 - 0.64 0.72 8 - μA 6 - mA - 700 μA 14 45 mA VI20120C UNIT TA = 25 °C VR = 90 V TA = 125 °C Reverse current per diode IR (2) TA = 25 °C VR = 120 V TA = 125 °C UNIT V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance per diode V20120C RJC 2.8 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V20120C-M3/4W 1.88 4W 50/tube Tube TO-262AA VI20120C-M3/4W 1.45 4W 50/tube Tube TO-220AB V20120CHM3/4W (1) 1.88 4W 50/tube Tube TO-262AA VI20120CHM3/4W (1) 1.45 4W 50/tube Tube Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 Resistive or Inductive Load 20 Average Power Loss (W) Average Forward Rectified Current (A) 25 15 10 5 D = 0.3 6 D = 0.2 D = 1.0 D = 0.1 4 T 2 Mounted on Specific Heatsink 0 D = 0.8 D = 0.5 8 D = tp/T tp 8 10 0 0 25 50 75 100 125 150 175 0 2 4 6 12 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 11-May-16 Document Number: 89159 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20120C, VI20120C www.vishay.com Vishay General Semiconductor 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TA = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TA = 125 °C 10 TA = 100 °C 1 TA = 25 °C 0.1 1000 100 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 100 TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C 0.1 TA = 25 °C 0.01 0.001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode Junction to Case 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 11-May-16 Document Number: 89159 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20120C, VI20120C www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) TO-262AA 0.185 (4.70) 0.175 (4.44) 0.411 (10.45) MAX. 30° (TYP.) (REF.) 0.250 (6.35) MIN. 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) K 0.950 (24.13) 0.920 (23.37) 1 PIN 2 0.510 (12.95) 0.470 (11.94) 0.350 (8.89) 0.330 (8.38) 3 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.401 (10.19) 0.381 (9.68) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.022 (0.56) 0.014 (0.35) 0.205 (5.20) 0.195 (4.95) Revision: 11-May-16 Document Number: 89159 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000