SHD124212 SHD124212P SHD124212N SHD124212D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1160, REV. B HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Soft Reverse Recovery at Low and High Temperature Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Average Forward Current Symbol VRWM IF(AV) IF(AV) Max. Peak One Cycle NonRepetitive Surge Current Max. Thermal Resistance Max. Thermal Resistance IFSM R R Max. Junction Temperature Max. Storage Temperature TJ Tstg JC JC Condition 50% duty cycle, rectangular wave form (Single/Doubler) 50% duty cycle, rectangular wave form (Common Cathode/Common Anode) 8.3 ms, half Sine wave (per leg) (Single) (Common Cathode/Common Anode/Doubler) (per leg) - Max. 45 15 Units V A 30 A 200 A 2.82 1.40 C/W C/W -65 to +150 -65 to +150 C C Max. 0.65 Units V 0.60 V 1.5 A 70 mA 800 pF Electrical Characteristics: Characteristics Max. Forward Voltage Drop Symbol VF1 VF2 Max. Reverse Current IR1 IR2 Max. Junction Capacitance CT Condition @ 15A, Pulse, TJ = 25 C (per leg) @ 15A, Pulse, TJ = 125 C (per leg) @VR = 45V, Pulse, TJ = 25 C (per leg) @VR = 45V, Pulse, TJ = 125 C (per leg) @VR = 5V, TC = 25 C fSIG = 1MHz, VSIG = 50mV (p-p) (per leg) ©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SHD124212 SHD124212P SHD124212N SHD124212D TECHNICAL DATA DATA SHEET 1160, REV. B Mechanical Dimensions: In Inches / mm .165 (4.19 Dia. .155 3.94) SINGLE .695 (17.65 .685 17.40) .045 (1.14 .035 0.89) .835 (21.21 .815 20.70) .707 (17.96 .697 17.70) 1.302 (33.07 1.202 30.53) 1 2 1 2 3 1 COMMON ANODE .550 (13.97 .530 13.46) 2 DOUBLER .200(5.08) BSC 2 Plac es 2 3 1 2 3 .140(3.56) BSC TO-258 PINOUT TABLE TYPE PIN 1 PIN 2 SINGLE RECTIFIER CATHODE ANODE DUAL RECTIFIER, COMMON CATHODE (P) ANODE 1 COMMON CATHODE DUAL RECTIFIER, COMMON ANODE (N) CATHODE 1 COMMON ANODE DUAL RECTIFIER, DOUBLER (D) ANODE CATHODE/ANODE Note: The Vf curves shown are for the SD125SA45 un-packaged die only. PIN 3 ANODE ANODE 2 CATHODE 2 CATHODE Typical Reverse Characteristics Instantaneous Reverse Current - I R (mA) Typical Forward Characteristics 101 150 °C 102 150 °C 101 125 °C 100 °C 100 75 °C -1 10 50 °C 10-2 25 °C 125 °C 100 10-3 0 25 °C Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) 3 3 1 .065 (1.65 .055 1.40) 3 Plac es COMMON CATHODE .270 (6.86 .240 6.10) 10-1 0.0 0.2 0.4 0.6 Forward Voltage Drop -FV(V) 0.8 10 20 30 40 Reverse Voltage - RV (V) 50 Typical Junction Capacitance 800 700 600 500 400 300 200 0 10 20 30 40 Reverse Voltage - RV (V) 50 ©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] TECHNICAL DATA DATA SHEET 1160, REV. B SHD124212 SHD124212P SHD124212N SHD124212D DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]