INTERSIL HA-5112

HA-5112/883
Dual, Low Noise, High Performance
Uncompensated Operational Amplifier
July 1994
Features
Description
• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
Low Noise and high performance are key words describing
the dual, uncompensated HA-5112/883. This general purpose amplifier offers an array of dynamic specifications
including 12V/µs slew rate (min), and 54MHz gain-bandwidth-product for AVCL ≥ 10. Complementing these outstanding parameters is a very low noise specification of 6nV/√Hz
at 1kHz (max).
• Low Input Noise Voltage Density at 1kHz. . . 6nV/√Hz(Max)
4.3nV/√Hz(Typ)
• High Slew Rate . . . . . . . . . . . . . . . . . . . . . . 12V/µs (Min)
20V/µs (Typ)
Fabricated using the Intersil standard high frequency D.I.
process, these operational amplifiers also offer excellent
input specifications such as 2.5mV (max) offset voltage and
75nA (max) offset current. Complementing these specifications are 100dB (min) open loop gain and 55dB channel
separation (min). The HA-5112/883 also consumes a very
modest amount of supply power (180mW/package).
• Wide Gain Bandwidth Product (AVCL ≥ 10) . . . . 54MHz
• Low Offset Voltage Drift . . . . . . . . . . . . . . 3µV/oC (Typ)
• High Open Loop Gain (Full Temp.). . . . . 100kV/V (Min)
250kV/V (Typ)
• High CMRR/PSRR (Full Temp.) . . . . . . . . . . . 86dB (Min)
100dB (Typ)
This impressive combination of features make this amplifier
ideally suited for designs ranging from audio amplifiers and
active filters to the most demanding signal conditioning and
instrumentation circuits.
• Low Offset Voltage Drift . . . . . . . . . . . . . . 3µV/oC (Typ)
• No Crossover Distortion
• Standard Dual Pinout
Ordering Information
Applications
PART
NUMBER
• High Quality Audio Preamplifiers
• High Q Active Filters
• Low Noise Function Generators
TEMPERATURE
RANGE
PACKAGE
HA2-5112/883
-55oC to +125oC
8 Pin Can
HA4-5112/883
-55oC to +125oC
20 Lead Ceramic LCC
HA7-5112/883
-55oC to +125oC
8 Lead CerDIP
• Low Distortion Oscillators
• Low Noise Comparators
Pinouts
-IN1
2
+IN1
3
V-
4
+
1
2
+
V+
7
OUT2
6
-IN2
NC
4
3
2
1
20 19
-+
+IN2
17 OUT2
2
NC 6
5
8
OUT1
1
-IN1
15 -IN2
+IN1 7
14 NC
+ -
6
-IN2
V-
+IN1
5 +IN2
3
4
V-
NC
10 11 12 13
NC
9
NC
NC 8
+IN2
- +
2
OUT2
2
16 NC
+-
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-119
7
1
18 NC
1
-IN1 5
V+
NC
V+
8
NC
1
HA-5112/883
(METAL CAN)
TOP VIEW
NC
OUT1
HA-5112/883
(CLCC)
TOP VIEW
OUT 1
HA-5112/883
(CERDIP)
TOP VIEW
511032-883
File Number 3711
Spec Number
Specifications HA-5112/883
Absolute Maximum Ratings
Thermal Information
Voltage between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 40V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VPeak Output Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite
(One Amplifier Shorted to Ground)
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC
Thermal Resistance
θJA
θJC
CerDIP Package . . . . . . . . . . . . . . . . . . . 115oC/W
28oC/W
Ceramic LCC Package . . . . . . . . . . . . . .
65oC/W
15oC/W
Metal Can Package . . . . . . . . . . . . . . . . . 155oC/W 67oC/W
Package Power Dissipation Limit at +75oC
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 870mW
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645mW
Package Power Dissipation Derating Factor Above +75oC
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/oC
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/oC
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . ±5V to ±15V
VINCM ≤ 1/2 (V+ - V-)
RL ≥ 2kΩ
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: VSUPPLY = ±15V, RSOURCE = 100Ω, RLOAD = 500kΩ, VOUT = 0V, Unless Otherwise Specified.
PARAMETERS
Input Offset Voltage
Input Bias Current
SYMBOL
VIO
+IB
-IB
Input Offset Current
Common Mode Range
IIO
+CMR
-CMR
Large Signal Voltage
Gain
+AVOL
-AVOL
Common Mode
Rejection Ratio
+CMRR
-CMRR
CONDITIONS
LIMITS
GROUP A
SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
-2.0
2.0
mV
2, 3
+125oC, -55oC
-2.5
2.5
mV
1
+25oC
-200
200
nA
2, 3
+125oC, -55oC
-325
325
nA
1
+25oC
-200
200
nA
2, 3
+125oC, -55oC
-325
325
nA
1
+25oC
-75
75
nA
2, 3
+125oC, -55oC
-125
125
nA
1
+25oC
+12
-
V
2, 3
+125oC, -55oC
+12
-
V
1
+25oC
-
-12
V
2, 3
+125oC, -55oC
-
-12
V
4
+25oC
100
-
kV/V
5, 6
+125oC, -55oC
100
-
kV/V
4
+25oC
100
-
kV/V
5, 6
+125oC, -55oC
100
-
kV/V
1
+25oC
86
-
dB
2, 3
+125oC, -55oC
86
-
dB
1
+25oC
86
-
dB
2, 3
+125oC, -55oC
86
-
dB
VCM = 0V
VCM = 0V, +RS = 10kΩ,
-RS = 100Ω
VCM = 0V, +RS = 100Ω,
-RS = 10kΩ
VCM = 0V,
+RS = 10kΩ,
-RS = 10kΩ
V+ = +3V, V- = -27V
V+ = +27V, V- = -3V
VOUT = 0V and +10V,
RL = 2kΩ
VOUT = 0V and -10V,
RL = 2kΩ
∆VCM = +5V,
V+ = +10V, V- = -20V,
VOUT = -5V
∆VCM = -5V,
V+ = +20V, V- = -10V,
VOUT = +5V
Spec Number
3-120
511032-883
Specifications HA-5112/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: VSUPPLY = ±15V, RSOURCE = 100Ω, RLOAD = 500kΩ, VOUT = 0V, Unless Otherwise Specified.
PARAMETERS
Output Voltage Swing
SYMBOL
+VOUT1
-VOUT1
+VOUT2
-VOUT2
Output Current
+IOUT
-IOUT
Quiescent Power Supply
Current
+ICC
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
10
-
V
2, 3
+125oC, -55oC
10
-
V
1
+25oC
-
-10
V
2, 3
+125oC, -55oC
-
-10
V
1
+25oC
12
-
V
2, 3
+125oC, -55oC
12
-
V
1
+25oC
-
-12
V
2, 3
+125oC, -55oC
-
-12
V
1
+25oC
10
-
mA
2, 3
+125oC, -55oC
10
-
mA
1
+25oC
-
-10
mA
2, 3
+125oC, -55oC
-
-10
mA
1
+25oC
-
5
mA
2, 3
+125oC, -55oC
-
6
mA
1
+25oC
-5
-
mA
2, 3
+125oC, -55oC
-6
-
mA
1
+25oC
86
-
dB
2, 3
+125oC, -55oC
86
-
dB
1
+25oC
86
-
dB
2, 3
+125oC, -55oC
86
-
dB
RL = 2kΩ
RL = 2kΩ
RL = 10kΩ
RL = 10kΩ
VOUT = -5V
VOUT = +5V
VOUT = 0V, IOUT = 0mA
-ICC
Power Supply
Rejection Ratio
CONDITIONS
VOUT = 0V, IOUT = 0mA
+PSRR
-PSRR
LIMITS
GROUP A
SUBGROUPS
∆VSUP = 10V,
V+ = +10V, V- = -15V
V+ = +20V, V- = -15V
∆VSUP = 10V,
V+ = +15V, V- = -10V
V+ = +15V, V- = -20V
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank. See AC Parameters in Table 3
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: VSUPPLY = ±15V, RLOAD = 2kΩ, CLOAD = 50pF, AVCL = 10V/V, Unless Otherwise Specified.
LIMITS
PARAMETERS
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
250
-
kΩ
Differential Input
Resistance
RIN
VCM = 0V
1
+25oC
Input Noise Voltage
EN
RS = 20Ω,
fO = 1000Hz
1
+25oC
-
6
nV/√Hz
Input Noise Current
IN
RS = 2MΩ,
fO = 1000Hz
1
+25oC
-
3
pA/√Hz
GBWP
VO = 200mV,
fO = 50kHz
1
+25oC
40
-
MHz
VO = 200mV,
fO = 1MHz
1
+25oC
54
-
MHz
Gain Bandwidth Product
Spec Number
3-121
511032-883
Specifications HA-5112/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Characterized at: VSUPPLY = ±15V, RLOAD = 2kΩ, CLOAD = 50pF, AVCL = 10V/V, Unless Otherwise Specified.
LIMITS
PARAMETERS
SYMBOL
Slew Rate
Full Power Bandwidth
Rise and Fall Time
Output Resistance
TEMPERATURE
MIN
MAX
UNITS
+SR
VOUT = -5V to +5V
1
12
-
V/µs
-SR
VOUT = +5V to -5V
1
+25oC
12
-
V/µs
1, 2
+25oC
191
-
kHz
10
-
V/V
VPEAK = 10V
-55oC
RL = 2kΩ, CL = 50pF
1
tR
VOUT = 0V to +200mV
1, 4
+25oC
-
100
ns
1, 4
+25oC
-
100
ns
VOUT = 0V to -200mV
to
+125oC
CLSG
tF
Overshoot
NOTES
+25oC
FPBW
Minimum Closed Loop
Stable Gain
CONDITIONS
+OS
VOUT = 0V to +200mV
1
+25oC
-
40
%
-OS
VOUT = OV to -200mV
1
+25oC
-
40
%
1
+25oC
-
232
Ω
-
180
mW
55
-
dB
ROUT
Open Loop
Quiescent Power
Consumption
PC
VOUT = 0V, IOUT = 0mA
Channel Separation
CS
RS = 1kΩ,
AVCL = 100V/V,
VIN = 100mVPEAK at
10kHz, Referred to
Input
1, 3
1
-55oC
to
+125oC
+25oC
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πVPEAK).
3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.).
4. Measured between 10% and 90% points.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLE 1)
Interim Electrical Parameters (Pre Burn-In)
1
Final Electrical Test Parameters
1 (Note 1), 2, 3, 4, 5, 6
Group A Test Requirements
1, 2, 3, 4, 5, 6
Groups C and D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
Spec Number
3-122
511032-883
HA-5112/883
Die Characteristics
DIE DIMENSIONS:
98.4 x 67.3 x 19 mils ± 1 mils
2500 x 1710 x 483µm ± 25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
WORST CASE CURRENT DENSITY:
1.43 x 105A/cm2 at 10mA
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
TRANSISTOR COUNT: 93
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5112/883
V-
+IN2
+IN1
-IN1
-IN2
OUT2
OUT1
V+
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Spec Number
3-123
511032-883