INTERSIL HA-2839

HA-2839/883
Very High Slew Rate,
Wideband Operational Amplifier
July 1994
Features
Description
• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
The HA-2839/883 is a wideband, very high slew rate, operational amplifier featuring superior speed and bandwidth
characteristics. It also features trimmed supply current,
which minimizes supply current (and thus A.C. parameter)
variation over process and temperature extremes. For example, the ICC variation over the entire military temperature
range is typically less than 0.5mA. Bipolar construction, coupled with dielectric isolation, delivers outstanding performance in circuits with closed loop gains ≥10.
• Supply Current . . . . . . . . . . . . . . . . . . . . . 15.0mA (Max)
• Low Offset Voltage. . . . . . . . . . . . . . . . . . . 2.0mV (Max)
• Very High Slew Rate . . . . . . . . . . . . . . . . 600V/µs (Typ)
• Open Loop Gain . . . . . . . . . . . . . . . . . . . . . 20kV/V (Min)
• Wide Gain-Bandwidth (AV ≥ 10) . . . . . . . 600MHz (Typ)
• Input Noise Voltage at 1kHz . . . . . . . . . . 6nV/√Hz (Typ)
• Enhanced Replacement for HA-2539/883 and EL2039
Applications
• Pulse and Video Amplifiers
• Wideband Amplifiers
The 600V/µs slew rate, and 600MHz gain bandwidth product
ensure high performance in video and wideband amplifier
designs. Differential gain and phase are a low 0.03% and
0.03 degrees, respectively, making the HA-2839/883 ideal
for video applications. A full ±10V output swing, high open
loop gain, and outstanding A.C. parameters make
the HA-2839/883 an excellent choice for data acquisition
systems.
Ordering Information
• RF/IF Signal Processing
PART
NUMBER
• High Speed Sample-Hold Circuits
• Fast, Precise D/A Converters
HA1-2839/883
TEMPERATURE
RANGE
-55oC
to
+125oC
PACKAGE
14 Lead CerDIP
• RF Oscillators
Pinout
HA-2839/883
(CERDIP)
TOP VIEW
+IN 1
NC 2
14 -IN
+ -
13 NC
V- 3
12 NC
NC 4
11 NC
NC 5
10 V+
NC 6
9 NC
NC 7
8 OUT
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com | Copyright © Intersil Corporation 1999
3-53
511089-883
File Number 3593.1
Spec Number
Specifications HA-2839/883
Absolute Maximum Ratings
Thermal Information
Voltage between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 35V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VPeak Output Current (≤ 10% Duty Cycle). . . . . . . . . . . . . . . . . 50mA
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10 seconds) . . . . . . . . . . . . . +300oC
Thermal Resistance
θJA
θJC
14 Lead CerDIP Package . . . . . . . . . . . .
81oC/W
26oC/W
Package Power Dissipation Limit at +75oC for TJ ≤ +175oC
14 Lead CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . 1.23W
Package Power Dissipation Derating Factor Above +75oC
14 Lead CerDIP Package . . . . . . . . . . . . . . . . . . . . . .12.3mW/ oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . ±12V to ±15V
VINCM ≤ 1/2 (V+ - V-)
RL ≥ 1kΩ
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: VSUPPLY = ±15V, RSOURCE = 100Ω, RLOAD = 100kΩ, VOUT = 0V, Unless Otherwise Specified.
LIMITS
DC PARAMETERS
Input Offset Voltage
Input Bias Current
SYMBOL
VIO
+IB
-IB
Input Offset Current
Common Mode Range
IIO
+CMR
-CMR
Large Signal Voltage
Gain
+AVOL
-AVOL
Common Mode
Rejection Ratio
+CMRR
-CMRR
CONDITIONS
GROUP A
SUBGROUP
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
-2
2
mV
2, 3
+125oC, -55oC
-6
6
mV
1
+25oC
-14.5
14.5
µA
2, 3
+125oC, -55oC
-20
20
µA
1
+25oC
-14.5
14.5
µA
2, 3
+125oC, -55oC
-20
20
µA
1
+25oC
-4
4
µA
2, 3
+125oC, -55oC
-8
8
µA
1
+25oC
10
-
V
2, 3
+125oC, -55oC
10
-
V
1
+25oC
-
-10
V
2, 3
+125oC, -55oC
-
-10
V
4
+25oC
20
-
kV/V
5, 6
+125oC, -55oC
10
-
kV/V
4
+25oC
20
-
kV/V
5, 6
+125oC, -55oC
10
-
kV/V
1
+25oC
75
-
dB
2,3
+125oC, -55oC
75
-
dB
1
+25oC
75
-
dB
2, 3
+125oC, -55oC
75
-
dB
VCM = 0V
VCM = 0V, +RS = 1.1kΩ
-RS = 100Ω
VCM = 0V, +RS = 100Ω
-RS = 1.1kΩ
VCM = 0V, +RS = 1.1kΩ
-RS = 1.1kΩ
V+ = 5V
V- = -25V
V+ = 25V
V- = -5V
VOUT = 0V and +10V
RL = 1kΩ
VOUT = 0V and -10V
RL = 1kΩ
∆VCM = 10V,
VOUT = -10V
V+ = 5V, V- = -25V
∆VCM = -10V,
VOUT = 10V
V+ = 25V, V- = -5V
Spec Number
3-54
511089-883
Specifications HA-2839/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: VSUPPLY = ±15V, RSOURCE = 100Ω, RLOAD = 100kΩ, VOUT = 0V, Unless Otherwise Specified.
LIMITS
DC PARAMETERS
Output Voltage Swing
SYMBOL
+VOUT
-VOUT
Output Current
+IOUT
-IOUT
Quiescent Power
Supply Current
+ICC
-ICC
Power Supply
Rejection Ratio
+PSRR
-PSRR
CONDITIONS
GROUP A
SUBGROUP
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
10
-
V
2, 3
+125oC, -55oC
10
-
V
1
+25oC
-
-10
V
2, 3
+125oC, -55oC
-
-10
V
1
+25oC
10
-
mA
2, 3
+125oC, -55oC
10
-
mA
1
+25oC
-
-10
mA
2, 3
+125oC, -55oC
-
-10
mA
1
+25oC
-
14.6
mA
2, 3
+125oC, -55oC
-
15
mA
1
+25oC
-14.6
-
mA
2, 3
+125oC, -55oC
-15
-
mA
1
+25oC
75
-
dB
2, 3
+125oC, -55oC
75
-
dB
1
+25oC
75
-
dB
2, 3
+125oC, -55oC
75
-
dB
RL = 1kΩ
RL = 1kΩ
VOUT = 10V
VOUT = -10V
VOUT = 0V
IOUT = 0mA
VOUT = 0V
IOUT = 0mA
∆VSUP = 10V
V+ = 10V, V- = -15V
V+ = 20V, V- = -15V
∆VSUP = 10V
V+ = 15V, V- = -10V
V+ = 15V, V- = -20V
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank. See A.C. Specifications in Table 3
Spec Number
3-55
511089-883
Specifications HA-2839/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: VSUPPLY = ±15V, RSOURCE = 50Ω, RLOAD = 1kΩ, CL ≤10pF, AV = +10V/V, Unless Otherwise Specified.
LIMITS
PARAMETERS
Gain Bandwidth
Product
Slew Rate
Full Power Bandwidth
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
GBWP
VO = 200mV, fO = 5MHz
1
+25oC
500
-
MHz
VO = 200mV,
fO = 45MHz
1
+25oC
450
-
MHz
+SR
VO = -5V to +5V
1, 4
+25oC
550
-
V/µs
-SR
VO = +5V to -5V
1, 4
+25oC
500
-
V/µs
VPEAK = 10V
1, 2
+25oC
8.0
-
MHz
TR
VO = 0V to +200mV
1, 4
+25oC
-
10
ns
TF
VO = 0V to -200mV
1, 4
+25oC
-
10
ns
FPBW
Rise and Fall Time
Minimum Closed Loop
Stable Gain
Overshoot
Open Loop Output
Resistance
CLSG
RL = 1kΩ, CL ≤ 10pF
1
-55oC to +125oC
10
-
V/V
+OS
VO = 0V to +200mV
1
+25oC
-
30
%
-OS
VO = 0V to -200mV
1
+25oC
-
30
%
VOUT = 0V
1
+25oC
-
60
Ω
1, 3
-55oC to +125oC
-
450
mW
ROUT
Quiescent Power
Consumption
PC
VOUT = 0V, IOUT = 0mA
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πVPEAK ).
3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)
4. Measured between 10% and 90% points.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLE 1)
Interim Electrical Parameters (Pre Burn-In)
1
Final Electrical Test Parameters
1 (Note 1), 2, 3, 4, 5, 6
Group A Test Requirements
1, 2, 3, 4, 5, 6
Groups C & D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
Spec Number
3-56
511089-883
HA-2839/883
Die Characteristics
DIE DIMENSIONS:
65 x 52 x 19 mils ± 1 mils
1650 x 1310 x 483µm ± 25.4µm
METALLIZATION:
Type: Aluminum, 1% Copper
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Al, 1% Cu
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1kÅ
WORST CASE CURRENT DENSITY:
1.3 x 105 A/cm2 at 3.4mA
SUBSTRATE POTENTIAL (Powered Up): VTRANSISTOR COUNT: 34
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-2839/883
V+
OUT
-IN
+IN
V-
Spec Number
3-57
511089-883
HA-2839/883
Test Circuit (Applies to Table 1)
+VCC
-1
1
0.1
S7
1K
S1
1
1 S6
OPEN 2
S5B 1
S8
+
OPEN
2
OPEN
1K
100
2 OPEN
S5A
DUT
1
0.1
100
FOR LOOP STABILITY,
USE MIN VALUE CAPACITOR
TO PREVENT OSCILLATION
2
OPEN
1
OPEN 2
S2
100K
1
OPEN
V1
1
-VEE
100K
OPEN
1
3
1
2
FB
+
S9
2
V2
1K
10K
EOUT
BUFFER
10K
ALL RESISTORS = ±1% (Ω)
ALL CAPACITORS = ±10% (µF)
Test Waveforms
SIMPLIFIED TEST CIRCUIT FOR LARGE AND SMALL SIGNAL RESPONSE (APPLIES TO TABLE 3)
VIN
+
-
VOUT
NOTES:
900Ω
50Ω
100Ω
1. VS = ±15V
2. AV = +10
3. CL ≤ 10pF
MEASURED LARGE SIGNAL RESPONSE
MEASURED SMALL SIGNAL RESPONSE
Vertical Scale: Input = 1V/Div., Output = 5V/Div.
Horizontal Scale: 50ns /Div.
Vertical Scale: Input = 10mV/Div., Output=100mV/Div.
Horizontal Scale: 50ns/Div.
INPUT
INPUT
OUTPUT
OUTPUT
Spec Number
3-58
511089-883
HA-2839/883
Burn-In Circuit
HA1-2839/883 CERAMIC DIP
R2
2
V-
C2
D2
14
+
1
13
3
12
4
11
5
10
6
9
7
8
R1
V+
D1
C1
NOTES:
1. R1 = 10kΩ, ± 5%, 1/4W (Min)
2. R2 = 1kΩ, ± 5%, 1/4W (Min)
3. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row, (Min)
4. D1 = D2 = 1N4002 or Equivalent/Board
5. (V+) - (V-)= 31V ± 1V
Spec Number
3-59
511089-883
HA-2839/883
Schematic Diagram
V+
R2
3K
R3
1.4K
R10
190
R16
190
R17
500
QP7
QP11
QP14
QP8
QP12
QP15
R4
1.4K
QP5
QP4
QP3
R5
3K
R1
250K
QN15
QP6
CC
1.1pF
R18
10
QN16
QP16
V-
QP1
QN5
QN6
R11
40
R12
40
QP13
R19
3K
QN9
R24
35
R23
6K
OUT
R25
35
QN1
+IN
-IN
QN12
QP18
R6
10K
R13
40
V+
R20
10
R14
40
QP17
DZ1
QP10
QP9
QP2
QN3
QN7
QN10
QN13
QN8
QN11
QN14
R8
3K
QN2
QN4
R7
1.4K
R9
1.4K
R15
190
R21
190
R22
500
V-
Spec Number
3-60
511089-883
HA-2839
Very High Slew Rate,
Wideband Operational Amplifier
DESIGN INFORMATION
The information contained in this section has been developed through characterization by Intersil Corporation and is for use as application
and design information only. No guarantee is implied.
Typical Performance Curves
VSUPPLY = ±15V, AV = +10, RL = 1kΩ, CL ≤ 10pF, TA = +25oC, Unless Otherwise Specified
FREQUENCY RESPONSE FOR VARIOUS GAINS
GAIN BANDWIDTH PRODUCT vs SUPPLY VOLTAGE
100
650
GAIN BANDWIDTH PRODUCT (MHz)
OPEN LOOP
80
40
20
0
AVCL = 1000
AVCL = 100
AVCL = 10
0
PHASE (DEGREES)
GAIN (dB)
60
90
OPEN LOOP
1K
10K
180
100K
1M
10M
600
550
500
100M
5
6
7
FREQUENCY (Hz)
GAIN BANDWIDTH PRODUCT vs TEMPERATURE
9
10
11
12
SUPPLY VOLTAGE (±V)
13
14
15
CMRR vs FREQUENCY
750
90
80
650
70
CMRR (dB)
GAIN BANDWIDTH PRODUCT (MHz)
8
550
450
60
50
40
350
30
250
-60
-40
-20
0
+20
+40
+60 +80
20
100
+100 +120 +140
TEMPERATURE (oC)
1K
10K
100K
1M
10M
FREQUENCY (Hz)
Spec Number
3-61
511089-883
HA-2839
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Corporation and is for use as application
and design information only. No guarantee is implied.
Typical Performance Curves
VSUPPLY = ±15V, AV = +10, RL = 1kΩ, CL ≤ 10pF, TA = +25oC, Unless Otherwise Specified
PSRR vs FREQUENCY
INPUT NOISE vs FREQUENCY
50
110
100
PSRR (dB)
NOISE VOLTAGE (nV/√Hz)
±PSRR
80
70
60
50
40
30
37.5
30
20
25
NOISE CURRENT
NOISE VOLTAGE
10
12.5
NOISE CURRENT (pA/√Hz)
90
20
10
0
100
1K
10K
100K
1M
0
10
10M
100
1K
FREQUENCY (Hz)
FREQUENCY (Hz)
SLEW RATE vs TEMPERATURE
SLEW RATE vs SUPPLY VOLTAGE
750
700
650
SLEW RATE (V/µs)
700
SLEW RATE (V/µs)
0
100K
10K
650
600
600
550
500
550
-60
450
-40
-20
0
+20 +40 +60 +80 +100 +120 +140
TEMPERATURE (oC)
INPUT OFFSET VOLTAGE AND INPUT BIAS CURRENT vs
TEMPERATURE
5
6
7
8
9
10
11
12
SUPPLY VOLTAGE (±V)
13
14
15
14
15
SUPPLY CURRENT vs SUPPLY VOLTAGE
14
8.0
2.5
6.0
BIAS CURRENT
1.5
OFFSET VOLTAGE
5.0
0.5
4.0
SUPPLY CURRENT (mA)
7.0
INPUT OFFSET VOLTAGE (mV)
INPUT BIAS CURRENT (µA)
3.5
-0.5
3.0
-60
12
-55oC
0
+125oC
10
8
6
5
-40 -20
+25oC
6
7
8
9
10
11
12
13
SUPPLY VOLTAGE (±V)
+20 +40 +60 +80 +100 +120 +140
TEMPERATURE (oC)
Spec Number
3-62
511089-883
HA-2839
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Corporation and is for use as application
and design information only. No guarantee is implied.
Typical Performance Curves
VSUPPLY = ±15V, AV = +10, RL = 1kΩ, CL ≤ 10pF, TA = +25oC, Unless Otherwise Specified
POSITIVE OUTPUT SWING vs TEMPERATURE
NEGATIVE OUTPUT SWING vs TEMPERATURE
15
±8V, 75Ω
-2.5
±8V, 150Ω
±8V, 1kΩ
±15V, 1kΩ
10
±15V, 150Ω
7.5
±15V, 75Ω
5
±8V, 1kΩ
2.5
±8V, 75Ω
±8V, 150Ω
0
-60
OUTPUT SWING (V)
POSITIVE OUTPUT SWING (V)
12.5
-5
±15V, 75Ω
-7.5
±15V, 150Ω
-10
±15V, 1kΩ
-12.5
-40 -20
0
+20 +40
-60
+60 +80 +100 +120 +140
-40
-20
0
+20
+40
+60
+80 +100 +120 +140
TEMPERATURE (oC)
TEMPERATURE (oC)
MAXIMUM UNDISTORTED OUTPUT SWING vs
FREQUENCY
TOTAL HARMONIC DISTORTION vs FREQUENCY
-35
-45
20
VSUPPLY = ±15V
-55
THD (dBc)
15
10
VSUPPLY = ±8V
5
-65
-75
-85
0
VO = 10VP-P
VO = 0.5VP-P
VO = 1VP-P
VO = 2VP-P
100K
1K
10K
100K
1M
FREQUENCY (Hz)
10M
1M
100M
10M
FREQUENCY (Hz)
INTERMODULATION DISTORTION vs FREQUENCY (TWO TONE)
-35
VO = 0.5VP-P
THIRD INTERMOD PRODUCT (dBc)
OUTPUT VOLTAGE SWING (VP-P)
25
VO = 1VP-P
-45
VO =2VP-P
-55
-65
VO = 5VP-P
-75
VO = 0.25VP-P
-85
-95
500K
1M
10M
FREQUENCY (Hz)
Spec Number
3-63
511089-883
HA-2839
TYPICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: VSUPPLY = ±15V, RL = 1kΩ, CL ≤ 10pF, Unless Otherwise Specified
PARAMETERS
TEMPERATURE
TYPICAL
UNITS
+25oC
0.6
mV
Full
2.0
mV
Full
20
µV/oC
+25oC
5.0
µA
Full
8.0
µA
+25oC
1.0
µA
Differential Input Resistance
+25oC
10
kΩ
Input Noise Voltage Density
fO = 1000Hz
+25oC
6.0
nV/√Hz
Input Noise Current Density
fO = 1000Hz
+25oC
6.0
pA/√Hz
Large Signal Voltage Gain
VOUT = ±10V
+25oC
25
kV/V
Full
20
kV/V
Full
80
dB
+25oC
600
MHz
VOUT ≥ 10V
Full
±20
mA
Open Loop
+25oC
30
Ω
Full Power Bandwidth
FPBW = SR/2πVP, VP = 10V
+25oC
9.6
MHz
Slew Rate
VOUT = ±10V, AV = +10
+25oC
600
V/µs
Rise and Fall Time
VOUT = ±100mV, AV = +10
+25oC
4
ns
Overshoot
VOUT = ±100mV, AV = +10
+25oC
20
%
PSRR
Delta VS = ±10V to ±20V
Full
90
dB
Supply Current
No Load
Full
13
mA
AV = +10, NTSC
+25oC
0.03
%
AV = +10, NTSC
+25oC
0.03
Degrees
AV = +10, f = 1MHz,
VOUT = 2VP-P
+25oC
-79
dBc
Input Offset Voltage
CONDITIONS
VCM = 0V
Average Offset Voltage Drift
Versus Temperature
Input Bias Current
VCM = 0V
Input Offset Current
CMRR
VCM = 0V
VCM = ±10V
Gain Bandwidth Product
Output Current
Output Resistance
Differential Gain
Differential Phase
Harmonic Distortion
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Spec Number
3-64
511089-883