HA-2839/883 Very High Slew Rate, Wideband Operational Amplifier July 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HA-2839/883 is a wideband, very high slew rate, operational amplifier featuring superior speed and bandwidth characteristics. It also features trimmed supply current, which minimizes supply current (and thus A.C. parameter) variation over process and temperature extremes. For example, the ICC variation over the entire military temperature range is typically less than 0.5mA. Bipolar construction, coupled with dielectric isolation, delivers outstanding performance in circuits with closed loop gains ≥10. • Supply Current . . . . . . . . . . . . . . . . . . . . . 15.0mA (Max) • Low Offset Voltage. . . . . . . . . . . . . . . . . . . 2.0mV (Max) • Very High Slew Rate . . . . . . . . . . . . . . . . 600V/µs (Typ) • Open Loop Gain . . . . . . . . . . . . . . . . . . . . . 20kV/V (Min) • Wide Gain-Bandwidth (AV ≥ 10) . . . . . . . 600MHz (Typ) • Input Noise Voltage at 1kHz . . . . . . . . . . 6nV/√Hz (Typ) • Enhanced Replacement for HA-2539/883 and EL2039 Applications • Pulse and Video Amplifiers • Wideband Amplifiers The 600V/µs slew rate, and 600MHz gain bandwidth product ensure high performance in video and wideband amplifier designs. Differential gain and phase are a low 0.03% and 0.03 degrees, respectively, making the HA-2839/883 ideal for video applications. A full ±10V output swing, high open loop gain, and outstanding A.C. parameters make the HA-2839/883 an excellent choice for data acquisition systems. Ordering Information • RF/IF Signal Processing PART NUMBER • High Speed Sample-Hold Circuits • Fast, Precise D/A Converters HA1-2839/883 TEMPERATURE RANGE -55oC to +125oC PACKAGE 14 Lead CerDIP • RF Oscillators Pinout HA-2839/883 (CERDIP) TOP VIEW +IN 1 NC 2 14 -IN + - 13 NC V- 3 12 NC NC 4 11 NC NC 5 10 V+ NC 6 9 NC NC 7 8 OUT CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com | Copyright © Intersil Corporation 1999 3-53 511089-883 File Number 3593.1 Spec Number Specifications HA-2839/883 Absolute Maximum Ratings Thermal Information Voltage between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 35V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VPeak Output Current (≤ 10% Duty Cycle). . . . . . . . . . . . . . . . . 50mA Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V Lead Temperature (Soldering 10 seconds) . . . . . . . . . . . . . +300oC Thermal Resistance θJA θJC 14 Lead CerDIP Package . . . . . . . . . . . . 81oC/W 26oC/W Package Power Dissipation Limit at +75oC for TJ ≤ +175oC 14 Lead CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . 1.23W Package Power Dissipation Derating Factor Above +75oC 14 Lead CerDIP Package . . . . . . . . . . . . . . . . . . . . . .12.3mW/ oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Operating Conditions Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . ±12V to ±15V VINCM ≤ 1/2 (V+ - V-) RL ≥ 1kΩ TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = ±15V, RSOURCE = 100Ω, RLOAD = 100kΩ, VOUT = 0V, Unless Otherwise Specified. LIMITS DC PARAMETERS Input Offset Voltage Input Bias Current SYMBOL VIO +IB -IB Input Offset Current Common Mode Range IIO +CMR -CMR Large Signal Voltage Gain +AVOL -AVOL Common Mode Rejection Ratio +CMRR -CMRR CONDITIONS GROUP A SUBGROUP TEMPERATURE MIN MAX UNITS 1 +25oC -2 2 mV 2, 3 +125oC, -55oC -6 6 mV 1 +25oC -14.5 14.5 µA 2, 3 +125oC, -55oC -20 20 µA 1 +25oC -14.5 14.5 µA 2, 3 +125oC, -55oC -20 20 µA 1 +25oC -4 4 µA 2, 3 +125oC, -55oC -8 8 µA 1 +25oC 10 - V 2, 3 +125oC, -55oC 10 - V 1 +25oC - -10 V 2, 3 +125oC, -55oC - -10 V 4 +25oC 20 - kV/V 5, 6 +125oC, -55oC 10 - kV/V 4 +25oC 20 - kV/V 5, 6 +125oC, -55oC 10 - kV/V 1 +25oC 75 - dB 2,3 +125oC, -55oC 75 - dB 1 +25oC 75 - dB 2, 3 +125oC, -55oC 75 - dB VCM = 0V VCM = 0V, +RS = 1.1kΩ -RS = 100Ω VCM = 0V, +RS = 100Ω -RS = 1.1kΩ VCM = 0V, +RS = 1.1kΩ -RS = 1.1kΩ V+ = 5V V- = -25V V+ = 25V V- = -5V VOUT = 0V and +10V RL = 1kΩ VOUT = 0V and -10V RL = 1kΩ ∆VCM = 10V, VOUT = -10V V+ = 5V, V- = -25V ∆VCM = -10V, VOUT = 10V V+ = 25V, V- = -5V Spec Number 3-54 511089-883 Specifications HA-2839/883 TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: VSUPPLY = ±15V, RSOURCE = 100Ω, RLOAD = 100kΩ, VOUT = 0V, Unless Otherwise Specified. LIMITS DC PARAMETERS Output Voltage Swing SYMBOL +VOUT -VOUT Output Current +IOUT -IOUT Quiescent Power Supply Current +ICC -ICC Power Supply Rejection Ratio +PSRR -PSRR CONDITIONS GROUP A SUBGROUP TEMPERATURE MIN MAX UNITS 1 +25oC 10 - V 2, 3 +125oC, -55oC 10 - V 1 +25oC - -10 V 2, 3 +125oC, -55oC - -10 V 1 +25oC 10 - mA 2, 3 +125oC, -55oC 10 - mA 1 +25oC - -10 mA 2, 3 +125oC, -55oC - -10 mA 1 +25oC - 14.6 mA 2, 3 +125oC, -55oC - 15 mA 1 +25oC -14.6 - mA 2, 3 +125oC, -55oC -15 - mA 1 +25oC 75 - dB 2, 3 +125oC, -55oC 75 - dB 1 +25oC 75 - dB 2, 3 +125oC, -55oC 75 - dB RL = 1kΩ RL = 1kΩ VOUT = 10V VOUT = -10V VOUT = 0V IOUT = 0mA VOUT = 0V IOUT = 0mA ∆VSUP = 10V V+ = 10V, V- = -15V V+ = 20V, V- = -15V ∆VSUP = 10V V+ = 15V, V- = -10V V+ = 15V, V- = -20V TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Table 2 Intentionally Left Blank. See A.C. Specifications in Table 3 Spec Number 3-55 511089-883 Specifications HA-2839/883 TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: VSUPPLY = ±15V, RSOURCE = 50Ω, RLOAD = 1kΩ, CL ≤10pF, AV = +10V/V, Unless Otherwise Specified. LIMITS PARAMETERS Gain Bandwidth Product Slew Rate Full Power Bandwidth SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS GBWP VO = 200mV, fO = 5MHz 1 +25oC 500 - MHz VO = 200mV, fO = 45MHz 1 +25oC 450 - MHz +SR VO = -5V to +5V 1, 4 +25oC 550 - V/µs -SR VO = +5V to -5V 1, 4 +25oC 500 - V/µs VPEAK = 10V 1, 2 +25oC 8.0 - MHz TR VO = 0V to +200mV 1, 4 +25oC - 10 ns TF VO = 0V to -200mV 1, 4 +25oC - 10 ns FPBW Rise and Fall Time Minimum Closed Loop Stable Gain Overshoot Open Loop Output Resistance CLSG RL = 1kΩ, CL ≤ 10pF 1 -55oC to +125oC 10 - V/V +OS VO = 0V to +200mV 1 +25oC - 30 % -OS VO = 0V to -200mV 1 +25oC - 30 % VOUT = 0V 1 +25oC - 60 Ω 1, 3 -55oC to +125oC - 450 mW ROUT Quiescent Power Consumption PC VOUT = 0V, IOUT = 0mA NOTES: 1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. 2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πVPEAK ). 3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.) 4. Measured between 10% and 90% points. TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLE 1) Interim Electrical Parameters (Pre Burn-In) 1 Final Electrical Test Parameters 1 (Note 1), 2, 3, 4, 5, 6 Group A Test Requirements 1, 2, 3, 4, 5, 6 Groups C & D Endpoints 1 NOTE: 1. PDA applies to Subgroup 1 only. Spec Number 3-56 511089-883 HA-2839/883 Die Characteristics DIE DIMENSIONS: 65 x 52 x 19 mils ± 1 mils 1650 x 1310 x 483µm ± 25.4µm METALLIZATION: Type: Aluminum, 1% Copper Thickness: 16kÅ ± 2kÅ GLASSIVATION: Type: Al, 1% Cu Silox Thickness: 12kÅ ± 2kÅ Nitride Thickness: 3.5kÅ ± 1kÅ WORST CASE CURRENT DENSITY: 1.3 x 105 A/cm2 at 3.4mA SUBSTRATE POTENTIAL (Powered Up): VTRANSISTOR COUNT: 34 PROCESS: Bipolar Dielectric Isolation Metallization Mask Layout HA-2839/883 V+ OUT -IN +IN V- Spec Number 3-57 511089-883 HA-2839/883 Test Circuit (Applies to Table 1) +VCC -1 1 0.1 S7 1K S1 1 1 S6 OPEN 2 S5B 1 S8 + OPEN 2 OPEN 1K 100 2 OPEN S5A DUT 1 0.1 100 FOR LOOP STABILITY, USE MIN VALUE CAPACITOR TO PREVENT OSCILLATION 2 OPEN 1 OPEN 2 S2 100K 1 OPEN V1 1 -VEE 100K OPEN 1 3 1 2 FB + S9 2 V2 1K 10K EOUT BUFFER 10K ALL RESISTORS = ±1% (Ω) ALL CAPACITORS = ±10% (µF) Test Waveforms SIMPLIFIED TEST CIRCUIT FOR LARGE AND SMALL SIGNAL RESPONSE (APPLIES TO TABLE 3) VIN + - VOUT NOTES: 900Ω 50Ω 100Ω 1. VS = ±15V 2. AV = +10 3. CL ≤ 10pF MEASURED LARGE SIGNAL RESPONSE MEASURED SMALL SIGNAL RESPONSE Vertical Scale: Input = 1V/Div., Output = 5V/Div. Horizontal Scale: 50ns /Div. Vertical Scale: Input = 10mV/Div., Output=100mV/Div. Horizontal Scale: 50ns/Div. INPUT INPUT OUTPUT OUTPUT Spec Number 3-58 511089-883 HA-2839/883 Burn-In Circuit HA1-2839/883 CERAMIC DIP R2 2 V- C2 D2 14 + 1 13 3 12 4 11 5 10 6 9 7 8 R1 V+ D1 C1 NOTES: 1. R1 = 10kΩ, ± 5%, 1/4W (Min) 2. R2 = 1kΩ, ± 5%, 1/4W (Min) 3. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row, (Min) 4. D1 = D2 = 1N4002 or Equivalent/Board 5. (V+) - (V-)= 31V ± 1V Spec Number 3-59 511089-883 HA-2839/883 Schematic Diagram V+ R2 3K R3 1.4K R10 190 R16 190 R17 500 QP7 QP11 QP14 QP8 QP12 QP15 R4 1.4K QP5 QP4 QP3 R5 3K R1 250K QN15 QP6 CC 1.1pF R18 10 QN16 QP16 V- QP1 QN5 QN6 R11 40 R12 40 QP13 R19 3K QN9 R24 35 R23 6K OUT R25 35 QN1 +IN -IN QN12 QP18 R6 10K R13 40 V+ R20 10 R14 40 QP17 DZ1 QP10 QP9 QP2 QN3 QN7 QN10 QN13 QN8 QN11 QN14 R8 3K QN2 QN4 R7 1.4K R9 1.4K R15 190 R21 190 R22 500 V- Spec Number 3-60 511089-883 HA-2839 Very High Slew Rate, Wideband Operational Amplifier DESIGN INFORMATION The information contained in this section has been developed through characterization by Intersil Corporation and is for use as application and design information only. No guarantee is implied. Typical Performance Curves VSUPPLY = ±15V, AV = +10, RL = 1kΩ, CL ≤ 10pF, TA = +25oC, Unless Otherwise Specified FREQUENCY RESPONSE FOR VARIOUS GAINS GAIN BANDWIDTH PRODUCT vs SUPPLY VOLTAGE 100 650 GAIN BANDWIDTH PRODUCT (MHz) OPEN LOOP 80 40 20 0 AVCL = 1000 AVCL = 100 AVCL = 10 0 PHASE (DEGREES) GAIN (dB) 60 90 OPEN LOOP 1K 10K 180 100K 1M 10M 600 550 500 100M 5 6 7 FREQUENCY (Hz) GAIN BANDWIDTH PRODUCT vs TEMPERATURE 9 10 11 12 SUPPLY VOLTAGE (±V) 13 14 15 CMRR vs FREQUENCY 750 90 80 650 70 CMRR (dB) GAIN BANDWIDTH PRODUCT (MHz) 8 550 450 60 50 40 350 30 250 -60 -40 -20 0 +20 +40 +60 +80 20 100 +100 +120 +140 TEMPERATURE (oC) 1K 10K 100K 1M 10M FREQUENCY (Hz) Spec Number 3-61 511089-883 HA-2839 DESIGN INFORMATION (Continued) The information contained in this section has been developed through characterization by Intersil Corporation and is for use as application and design information only. No guarantee is implied. Typical Performance Curves VSUPPLY = ±15V, AV = +10, RL = 1kΩ, CL ≤ 10pF, TA = +25oC, Unless Otherwise Specified PSRR vs FREQUENCY INPUT NOISE vs FREQUENCY 50 110 100 PSRR (dB) NOISE VOLTAGE (nV/√Hz) ±PSRR 80 70 60 50 40 30 37.5 30 20 25 NOISE CURRENT NOISE VOLTAGE 10 12.5 NOISE CURRENT (pA/√Hz) 90 20 10 0 100 1K 10K 100K 1M 0 10 10M 100 1K FREQUENCY (Hz) FREQUENCY (Hz) SLEW RATE vs TEMPERATURE SLEW RATE vs SUPPLY VOLTAGE 750 700 650 SLEW RATE (V/µs) 700 SLEW RATE (V/µs) 0 100K 10K 650 600 600 550 500 550 -60 450 -40 -20 0 +20 +40 +60 +80 +100 +120 +140 TEMPERATURE (oC) INPUT OFFSET VOLTAGE AND INPUT BIAS CURRENT vs TEMPERATURE 5 6 7 8 9 10 11 12 SUPPLY VOLTAGE (±V) 13 14 15 14 15 SUPPLY CURRENT vs SUPPLY VOLTAGE 14 8.0 2.5 6.0 BIAS CURRENT 1.5 OFFSET VOLTAGE 5.0 0.5 4.0 SUPPLY CURRENT (mA) 7.0 INPUT OFFSET VOLTAGE (mV) INPUT BIAS CURRENT (µA) 3.5 -0.5 3.0 -60 12 -55oC 0 +125oC 10 8 6 5 -40 -20 +25oC 6 7 8 9 10 11 12 13 SUPPLY VOLTAGE (±V) +20 +40 +60 +80 +100 +120 +140 TEMPERATURE (oC) Spec Number 3-62 511089-883 HA-2839 DESIGN INFORMATION (Continued) The information contained in this section has been developed through characterization by Intersil Corporation and is for use as application and design information only. No guarantee is implied. Typical Performance Curves VSUPPLY = ±15V, AV = +10, RL = 1kΩ, CL ≤ 10pF, TA = +25oC, Unless Otherwise Specified POSITIVE OUTPUT SWING vs TEMPERATURE NEGATIVE OUTPUT SWING vs TEMPERATURE 15 ±8V, 75Ω -2.5 ±8V, 150Ω ±8V, 1kΩ ±15V, 1kΩ 10 ±15V, 150Ω 7.5 ±15V, 75Ω 5 ±8V, 1kΩ 2.5 ±8V, 75Ω ±8V, 150Ω 0 -60 OUTPUT SWING (V) POSITIVE OUTPUT SWING (V) 12.5 -5 ±15V, 75Ω -7.5 ±15V, 150Ω -10 ±15V, 1kΩ -12.5 -40 -20 0 +20 +40 -60 +60 +80 +100 +120 +140 -40 -20 0 +20 +40 +60 +80 +100 +120 +140 TEMPERATURE (oC) TEMPERATURE (oC) MAXIMUM UNDISTORTED OUTPUT SWING vs FREQUENCY TOTAL HARMONIC DISTORTION vs FREQUENCY -35 -45 20 VSUPPLY = ±15V -55 THD (dBc) 15 10 VSUPPLY = ±8V 5 -65 -75 -85 0 VO = 10VP-P VO = 0.5VP-P VO = 1VP-P VO = 2VP-P 100K 1K 10K 100K 1M FREQUENCY (Hz) 10M 1M 100M 10M FREQUENCY (Hz) INTERMODULATION DISTORTION vs FREQUENCY (TWO TONE) -35 VO = 0.5VP-P THIRD INTERMOD PRODUCT (dBc) OUTPUT VOLTAGE SWING (VP-P) 25 VO = 1VP-P -45 VO =2VP-P -55 -65 VO = 5VP-P -75 VO = 0.25VP-P -85 -95 500K 1M 10M FREQUENCY (Hz) Spec Number 3-63 511089-883 HA-2839 TYPICAL PERFORMANCE CHARACTERISTICS Device Characterized at: VSUPPLY = ±15V, RL = 1kΩ, CL ≤ 10pF, Unless Otherwise Specified PARAMETERS TEMPERATURE TYPICAL UNITS +25oC 0.6 mV Full 2.0 mV Full 20 µV/oC +25oC 5.0 µA Full 8.0 µA +25oC 1.0 µA Differential Input Resistance +25oC 10 kΩ Input Noise Voltage Density fO = 1000Hz +25oC 6.0 nV/√Hz Input Noise Current Density fO = 1000Hz +25oC 6.0 pA/√Hz Large Signal Voltage Gain VOUT = ±10V +25oC 25 kV/V Full 20 kV/V Full 80 dB +25oC 600 MHz VOUT ≥ 10V Full ±20 mA Open Loop +25oC 30 Ω Full Power Bandwidth FPBW = SR/2πVP, VP = 10V +25oC 9.6 MHz Slew Rate VOUT = ±10V, AV = +10 +25oC 600 V/µs Rise and Fall Time VOUT = ±100mV, AV = +10 +25oC 4 ns Overshoot VOUT = ±100mV, AV = +10 +25oC 20 % PSRR Delta VS = ±10V to ±20V Full 90 dB Supply Current No Load Full 13 mA AV = +10, NTSC +25oC 0.03 % AV = +10, NTSC +25oC 0.03 Degrees AV = +10, f = 1MHz, VOUT = 2VP-P +25oC -79 dBc Input Offset Voltage CONDITIONS VCM = 0V Average Offset Voltage Drift Versus Temperature Input Bias Current VCM = 0V Input Offset Current CMRR VCM = 0V VCM = ±10V Gain Bandwidth Product Output Current Output Resistance Differential Gain Differential Phase Harmonic Distortion All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Spec Number 3-64 511089-883