ETC HA4-2522/883

HA-2520/883
HA-2522/883
®
Uncompensated, High Slew Rate
Operational Amplifiers
March 2002
Features
Description
• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
Description The HA-2520/883 and HA-2522/883 are monolithic operational amplifiers which deliver an unsurpassed
combination of specifications for slew rate, bandwidth and
settling time. These dielectrically isolated amplifiers are
designed for closed loop gains of 3 or greater without external compensation. In addition, these high performance components also provide low offset current and high input
impedance.
• High Slew Rate (HA-2520/883) . . . . . . . . .100V/µs (Min)
120V/µs (Typ)
• Wide Power Bandwidth (HA-2520/883) . . 1.5MHz (Min)
• Wide Gain Bandwidth (HA-2520/883) . . . . .10MHz (Min)
20MHz (Typ)
The 100V/µs (min) slew rate (80V/µs for HA-2522/883) and
fast settling time of these amplifiers make them ideal components for pulse amplification and data acquisition designs.
To insure compliance with slew rate and transient response
specifications, all devices are 100% tested for AC performance characteristics over full temperature. These devices
are valuable components for RF and video circuitry requiring
wideband operation. For accurate signal conditioning
designs, the HA-2520/883’s superior dynamic specifications
are complemented by 25nA (max) offset current (50nA for
HA-2522/883) and offset voltage adjust capability.
• High Input Impedance (HA-2520/883). . . . . 50MΩ (Min)
100MΩ (Typ)
• Low Offset Current (HA-2520/883) . . . . . . . . 25nA (Min)
10nA (Typ)
• Fast Settling (0.1% of 10V Step) . . . . . . . . . 200ns (Typ)
• Low Quiescent Supply Current . . . . . . . . . . 6mA (Max)
Applications
• Data Acquisition Systems
Ordering Information
• RF Amplifiers
PART
NUMBER
• Video Amplifiers
• Signal Generators
• Pulse Amplification
TEMPERATURE
RANGE
HA2-2520/883
-55oC
HA4-2522/883
-55oC
PACKAGE
to
+125oC
8 Pin Can
to
+125oC
20 Lead Ceramic LCC
Pinouts
COMP
2
1
20 19
COMP
NC
BAL
3
HA-2520/883
(METAL CAN)
TOP VIEW
NC
NC
HA-2522/883
(CLCC)
TOP VIEW
8
BAL
1
7
V+
18 NC
NC
4
-IN
5
NC
6
+IN
7
15 OUT
NC
8
14 NC
17 V+
-
-IN
+
2
16 NC
+IN
5
3
BAL
4
V-
NC
V-
BAL
10 11 12 13
NC
9
NC
+
6 OUT
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
1
Spec Number
511004-883
FN3735.1
HA-2520/883, HA-2522/883
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . 40V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VPeak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC
θJC
Thermal Resistance
θJA
Ceramic LCC Package . . . . . . . . . . . . . .
85oC/W
30oC/W
Metal Can Package . . . . . . . . . . . . . . . . . 160oC/W 75oC/W
Package Power Dissipation Limit at +75oC for TJ ≤ +175oC
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Package Power Dissipation Derating Factor Above +75oC
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/oC
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.3mW/oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief
TB379 for details.
Operating Conditions
VINCM ≤ 1/2 (V+ - V-)
RL ≥ 2kΩ
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: VSUPPLY = ±15V, RSOURCE = 100Ω, RLOAD = 500kΩ, VOUT = 0V, Unless Otherwise Specified.
PARAMETERS
Input Offset
Voltage
Input Bias Current
SYMBOL
VIO
Common Mode
Range
VCM = 0V
+IB
IIO
+CMR
-CMR
VCM = 0V,
+RS = 100kΩ,
-RS = 100Ω
VCM = 0V,
+RS = 100Ω,
-RS = 100kΩ
VCM = 0V,
+RS = 100kΩ,
-RS = 100kΩ
V+ = 5V, V- = -25V
V+ = 25V, V- = -5V
1
+25 C
+AVOL
-AVOL
Common Mode
Rejection Ratio
+CMRR
-CMRR
Output Voltage
Swing
+VOUT
-VOUT
VOUT = 0V and +10V,
RL = 2kΩ
VOUT = 0V and -10V,
RL = 2kΩ
∆VCM = +10V,
V+ = +5V, V- = -25V,
VOUT = -10V
∆VCM = -10V,
V+ = +25V, V- = -5V,
VOUT = +10V
RL = 2kΩ
RL = 2kΩ
+125oC,
-55oC
o
1
+25 C
o
o
HA-2520/883
HA-2522/883
MIN
MAX
MIN
MAX
UNITS
-8
8
-10
10
mV
-10
10
-14
14
mV
-200
200
-250
250
nA
2, 3
+125 C, -55 C
-400
400
-500
500
nA
1
+25oC
-200
200
-250
250
nA
o
o
2, 3
+125 C, -55 C
-400
400
-500
500
nA
1
+25oC
-25
25
-50
50
nA
o
o
2, 3
+125 C, -55 C
-50
50
-100
100
nA
1
+25oC
+10
-
+10
-
V
o
o
2, 3
+125 C, -55 C
+10
-
+10
-
V
1
+25oC
-
-10
-
-10
V
-
-10
-
-10
V
10
-
7.5
-
kV/V
7.5
-
5
-
kV/V
10
-
7.5
-
kV/V
7.5
-
5
-
kV/V
80
-
74
-
dB
2, 3
Large Signal
Voltage Gain
TEMPERATURE
o
2, 3
-IB
Input Offset
Current
CONDITIONS
GROUP A
SUBGROUPS
o
o
+125 C, -55 C
o
4
+25 C
5, 6
+125oC,
-55oC
o
4
+25 C
5, 6
o
o
+125 C, -55 C
o
1
+25 C
o
o
2, 3
+125 C, -55 C
80
-
74
-
dB
1
+25oC
80
-
74
-
dB
o
o
2, 3
+125 C, -55 C
80
-
74
-
dB
4
+25oC
10
-
10
-
V
o
o
5, 6
+125 C, -55 C
10
-
10
-
V
4
+25oC
-
-10
-
-10
V
-
-10
-
-10
V
5, 6
o
o
+125 C, -55 C
Spec Number
2
511004-883
HA-2520/883, HA-2522/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: VSUPPLY = ±15V, RSOURCE = 100Ω, RLOAD = 500kΩ, VOUT = 0V, Unless Otherwise Specified.
PARAMETERS
Output Current
SYMBOL
+IOUT
-IOUT
Quiescent Power
Supply Current
+ICC
-ICC
Power Supply
Rejection Ratio
+PSRR
-PSRR
Offset Voltage
Adjustment
+VIOAdj
-VIOAdj
CONDITIONS
VOUT = -10V
VOUT = +10V
VOUT = 0V, IOUT =
0mA
VOUT = 0V, IOUT =
0mA
∆VSUP = 10V,
V+ = +20V, V- = -15V,
V+ = +10V, V- = -15V
∆VSUP = 10V,
V+ = +15V, V- = -20V,
V+ = +15V, V- = -10V
Note 1
Note 1
HA-2520/883
HA-2522/883
TEMPERATURE
MIN
MAX
MIN
MAX
UNITS
4
+25oC
10
-
10
-
mA
5, 6
+125oC, -55oC
7.5
-
7.5
-
mA
4
+25oC
-
-10
-
-10
mA
5, 6
+125oC, -55oC
-
-7.5
-
-7.5
mA
1
+25oC
-
6
-
6
mA
2, 3
+125oC, -55oC
-
6.5
-
7
mA
1
+25oC
-6
-
-6
-
mA
2, 3
+125oC, -55oC
-6.5
-
-7
-
mA
1
+25oC
80
-
74
-
dB
2, 3
+125oC, -55oC
80
-
74
-
dB
1
+25oC
80
-
74
-
dB
2, 3
+125oC, -55oC
80
-
74
-
dB
1
+25oC
VIO-1
-
VIO-1
-
mV
2, 3
+125oC, -55oC
VIO-1
-
VIO-1
-
mV
1
+25oC
VIO+1
-
VIO+1
-
mV
2, 3
+125oC, -55oC
VIO+1
-
VIO+1
-
mV
GROUP A
SUBGROUPS
NOTE:
2. Offset adjustment range is [VIO (Measured) ±1mV] minimum referred to output. This test is for functionality only to assure adjustment
through 0V.
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: VSUPPLY = ±15V, RSOURCE = 50Ω, RLOAD = 2kΩ, CLOAD = 50pF, AVCL = +3V/V, Unless Otherwise Specified.
PARAMETERS
Slew Rate
SYMBOL
+SR
-SR
Rise and Fall
Time
TR
TF
Overshoot
+OS
-OS
CONDITIONS
VOUT = -5V to +5V
25% ≤ +SR ≤ 75%
VOUT = +5V to -5V
75% ≥ -SR ≥ 25%
VOUT = 0 to +200mV
10% ≤ TR ≤ 90%
VOUT = 0 to -200mV
10% ≤ TF ≤ 90%
VOUT = 0 to +200mV
VOUT = 0 to -200mV
GROUP A
SUBGROUPS
TEMPERATURE
o
7
+25 C
o
o
HA-2520/883
HA-2522/883
MIN
MAX
MIN
MAX
UNITS
100
-
80
-
V/µs
8A, 8B
+125 C, -55 C
84
-
60
-
V/µs
7
+25oC
100
-
80
-
V/µs
84
-
60
-
V/µs
-
50
-
50
ns
-
55
-
60
ns
-
50
-
50
ns
-
55
-
60
ns
-
40
-
50
%
8A, 8B
o
o
+125 C, -55 C
o
7
+25 C
8A, 8B
+125oC,
-55oC
o
7
+25 C
8A, 8B
+125oC,
-55oC
o
7
+25 C
o
o
8A, 8B
+125 C, -55 C
-
45
-
60
%
7
+25oC
-
40
-
50
%
-
45
-
60
%
8A, 8B
o
o
+125 C, -55 C
Spec Number
3
511004-883
HA-2520/883, HA-2522/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: VSUPPLY = ±15V, RLOAD = 2kΩ, CLOAD = 50pF, AV ≥ 3, CCOMP = 0pF, Unless Otherwise Specified.
PARAMETERS
Differential Input
Resistance
Full Power
Bandwidth
SYMBOL
RIN
GBWP
CONDITIONS
HA-2520/883
HA-2522/883
NOTES
TEMPERATURE
MIN
MAX
MIN
MAX
UNITS
VCM = 0V
1
+25oC
50
-
40
-
MΩ
VO = 200mV, fO =
10kHz
1
+25oC
10
-
10
-
MHz
VO = 200mV, fO = 1MHz
1
+25oC
10
-
10
-
MHz
1, 2
+25oC
1.6
-
1.2
-
MHz
1
-55oC to +125oC
+3
-
+3
-
V/V
1, 3
-55oC to +125oC
-
195
-
210
mW
Full Power
Bandwidth
FPBW
VPEAK = 10V
Minimum Closed
Loop Stable Gain
CLSG
RL = 2kΩ, CL = 50pF
Quiescent Power
Consumption
PC
VOUT = 0V, IOUT =
0mA
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πVPEAK).
3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLES 1 AND 2)
Interim Electrical Parameters (Pre Burn-In)
1
Final Electrical Test Parameters
1 (Note 1), 2, 3, 4, 5, 6, 7, 8A, 8B
Group A Test Requirements
1, 2, 3, 4, 5, 6, 7, 8A, 8B
Groups C and D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
Spec Number
4
511004-883
HA-2520/883, HA-2522/883
Die Characteristics
DIE DIMENSIONS:
67 x 57 x 19 mils ± 1 mils
1700 x 1440 x 483µm ± 25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
WORST CASE CURRENT DENSITY:
0.26 x 105 A/cm2
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
TRANSISTOR COUNT:
HA-2520/883: 40
HA-2522/883: 40
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-2520/883, HA-2522/883
COMP
V+
OUT
BAL
-IN
+IN
BAL
V-
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
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Spec Number
5
511004-883